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Details, datasheet, quote on part number:P2000AA61
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Datasheet text preview:
SIDACtor Device
SIDACtor Device
The modified TO-220 Type 61 SIDACtor solid state protection device can be used in telecommunication protection applications that do not reference earth ground. SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).
Electrical Parameters
Part Number * P2000AA61 P2200AA61 P2400AA61 P2500AA61 P3000AA61 P3300AA61 VDRM Volts 180 200 220 240 270 300 VS Volts 220 240 260 290 330 360 VT Volts 4 4 4 4 4 4 IDRM µAmps 5 5 5 5 5 5 IS mAmps 800 800 800 800 800 800 IT Amps 2.2 2.2 2.2 2.2 2.2 2.2 IH mAmps 150 150 150 150 150 150 CO pF 30 30 30 30 30 30
* For surge ratings, see table below. General Notes: · All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range. · IPP is a repetitive surge rating and is guaranteed for the life of the product. · Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. · VDRM is measured at IDRM. · VS is measured at 100 V/µs. · Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request. · Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.
Surge Ratings
IPP 0.2x310 µs Amps 20 IPP 2x10 µs Amps 150 IPP 8x20 µs Amps 150 IPP 10x160 µs Amps 90 IPP 10x560 µs Amps 50 IPP 5x320 µs Amps 75 IPP 10x1000 µs Amps 45 ITSM 60 Hz Amps 20 di/dt Amps/µs 500
Series A
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© 2003 Teccor Electronics SIDACtor® Data Book and Design Guide
SIDACtor Device
Thermal Considerations
Package Modified TO-220 Type 61 Symbol TJ TS RJA Parameter Operating Junction Temperature Range Storage Temperature Range Thermal Resistance: Junction to Ambient Value -40 to +150 -65 to +150 50 Unit °C °C °C/W
+I +I
IPP Peak Pulse Current %IPP
tr = rise time to peak value td = decay time to half value
IT IT IS S IH I DRM
V --V VT VT VDRM VDRM VS V
S
100
Peak Value
Wavefor m = tr x td
+V +V
50
Half Value
0 0 tr td t Time (µs)
-I -I
V-I Characteristics tr x td Pulse Wave-form
14
Percent of VS Change %
10
IH (TC = 25 °C)
12 8 6 4 2 0 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 0 20 40 60 80 100 120 140 160
IH
25 °C
25 °C
Ratio of
Case Temperature (TC) °C
Junction Temperature (TJ) °C
Normalized VS Change versus Junction Temperature
Normalized DC Holding Current versus Case Temperature
© 2003 Teccor Electronics SIDACtor® Data Book and Design Guide
2 - 29
http:// www.teccor.com +1 972-580-7777
Data Sheets
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