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Details, datasheet, quote on part number:P2000SA
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Datasheet text preview:
LCAS Asymmetrical Discrete Device
LCAS Asymmetrical Discrete Device
These DO-214AA SIDACtor devices are intended for LCAS (Line Circuit Access Switch) applications that require asymmetrical protection in discrete (individual) packages. They enable the protected equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21, K.45, IEG 60950, UL 60950, and TIA-968.
Electrical Parameters
Part Num b er * P1200S_ P2000S_ P2500S_ VDRM Volts 100 180 230 VS Volts 130 220 290 VT Volts 4 4 4 IDRM µAmps 5 5 5 IS mAmps 800 800 800 IT Amps 2.2 2.2 2.2 IH mAmps 120 120 120 CO pF 40 30 30
* For individual "SA", "SB", and "SC" surge ratings, see table below. General Notes: · All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range. · IPP is a repetitive surge rating and is guaranteed for the life of the product. · Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. · VDRM is measured at IDRM. · VS is measured at 100 V/µs. · Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request. · Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for "SA" and "SB" product. "SC" capacitance is approximately 10 pF higher.
Surge Ratings
IPP 2x10 µs Amps 150 250 500 IPP 8x20 µs Amps 150 250 400 IPP 10x160 µs Amps 90 150 200 IPP 10x560 µs Amps 50 100 150 IPP 10x1000 µs Amps 45 80 100 ITSM 60 Hz Amps 20 30 50 di/dt Amps/µs 500 500 500
Series A B C
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© 2003 Teccor Electronics SIDACtor® Data Book and Design Guide
LCAS Asymmetrical Discrete Device
Thermal Considerations
Package DO-214AA Symbol TJ TS RJA Parameter Operating Junction Temperature Range Storage Temperature Range Thermal Resistance: Junction to Ambient Value -40 to +125 -65 to +150 60 Unit °C °C °C/W
+I +I
IPP Peak Pulse Current %IPP
tr = rise time to peak value td = decay time to half value
IT IT IS S IH IDRM
V --V VT VT VDRM VDRM VS V
S
100
Peak Value
Wavefor m = tr x td
+V +V
50
Half Value
0 0 tr td t Time (µs)
-I -I
V-I Characteristics tr x td Pulse Wave-form
14
Percent of VS Change %
10
IH (TC = 25 °C)
12 8 6 4 2 0 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 0 20 40 60 80 100 120 140 160
IH
25 °C
25 °C
Ratio of
Case Temperature (TC) °C
Junction Temperature (TJ) °C
Normalized VS Change versus Junction Temperature
Normalized DC Holding Current versus Case Temperature
© 2003 Teccor Electronics SIDACtor® Data Book and Design Guide
2 - 41
http:// www.teccor.com +1 972-580-7777
Data Sheets
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