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Details, datasheet, quote on part number:P2300EA
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Datasheet text preview:
SIDACtor Device
SIDACtor Device
TO-92 SIDACtor solid state protection devices protect telecommunications equipment such as modems, line cards, fax machines, and other CPE. SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68)
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Electrical Parameters
Part Number * P0080E_ P0300E_ P0640E_ P0720E_ P0900E_ P1100E_ P1300E_ P1500E_ P1800E_ P2300E_ P2600E_ P3100E_ P3500E_ VDRM Volts 6 25 58 65 75 90 120 140 170 190 220 275 320 VS Volts 25 40 77 88 98 130 160 180 220 260 300 350 400 VT Volts 4 4 4 4 4 4 4 4 4 4 4 4 4 IDRM µAmps 5 5 5 5 5 5 5 5 5 5 5 5 5 IS mAmps 800 800 800 800 800 800 800 800 800 800 800 800 800 IT Amps 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 IH mAmps 50 50 150 150 150 150 150 150 150 150 150 150 150 CO pF 100 110 50 50 50 40 40 40 30 30 30 30 30
* For individual "EA", "EB", and "EC" surge ratings, see table below. General Notes: · All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range. · IPP is a repetitive surge rating and is guaranteed for the life of the product. · Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. · VDRM is measured at IDRM. · VS is measured at 100 V/µs. · Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request. · Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for "EA" and "EB" product. "EC" capacitance is approximately 2x the listed value. The off-state capacitance of the P0080EB is equal to the "EC" device.
Surge Ratings
IPP 2x10 µs Amps 150 250 500 IPP 8x20 µs Amps 150 250 400 IPP 10x160 µs Amps 90 150 200 IPP 10x560 µs Amps 50 100 150 IPP 10x1000 µs Amps 45 80 100 I TSM 60 Hz Amps 20 30 50 di/dt Amps/µs 500 500 500
Series A B C
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© 2003 Teccor Electronics SIDACtor® Data Book and Design Guide
SIDACtor Device
Thermal Considerations
Package TO-92 Symbol TJ TS RJA Parameter Operating Junction Temperature Range Storage Temperature Range Thermal Resistance: Junction to Ambient Value -40 to +150 -65 to +150 90 Unit °C °C °C/W
+I +I
IPP Peak Pulse Current %IPP
tr = rise time to peak value td = decay time to half value
IT IT IS S IH IDRM
V --V VT VT VDRM VDRM VS V
S
100
Peak Value
Wavefor m = tr x td
+V +V
50
Half Value
0 0 tr td t Time (µs)
-I -I
V-I Characteristics tr x td Pulse Wave-form
14
Percent of VS Change %
10
IH (TC = 25 °C)
12 8 6 4 2 0 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 0 20 40 60 80 100 120 140 160
IH
25 °C
25 °C
Ratio of
Case Temperature (TC) °C
Junction Temperature (TJ) °C
Normalized VS Change versus Junction Temperature
Normalized DC Holding Current versus Case Temperature
© 2003 Teccor Electronics SIDACtor® Data Book and Design Guide
2 - 17
http:// www.teccor.com +1 972-580-7777
Data Sheets
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