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Details, datasheet, quote on part number:P2353AB
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Datasheet text preview:
Balanced Three-chip SIDACtor Device
Balanced Three-chip SIDACtor Device
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The three-chip modified TO-220 SIDACtor balanced solid state device is designed for telecommunication protection systems that reference Tip and Ring to earth ground. Applications include any piece of transmission equipment that requires balanced protection. This device is built using Teccor's patented "Y" (US Patent 4,905,119) configuration. The SIDACtor device is used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20,K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).
Electrical Parameters
Part Num b er * P1553A_ P1803A_ P2103A_ P2353A_ P2703A_ P3203A_ P3403A_ P5103A_ A2106A_3 ** A5030A_3 ** VDRM Volts 130 150 170 200 230 270 300 420 170 400 VS Volts 180 210 250 270 300 350 400 600 250 550 VDRM Volts 130 150 170 200 230 270 300 420 50 270 VS Volts 180 210 250 270 300 350 400 600 80 340 VT Volts 8 8 8 8 8 8 8 8 8 8 IDRM µAmps 5 5 5 5 5 5 5 5 5 5 IS mAmps 800 800 800 800 800 800 800 800 800 800 IT Amps 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 IH mAmps 150 150 150 150 150 150 150 150 120 150 CO pF 40 40 40 40 30 30 30 30 40 30
Pins 1-2, 2-3
Pins 1-3
* For individual "AA", "AB", and "AC" surge ratings, see table below. ** Asymmetrical General Notes: · All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range. · IPP is a repetitive surge rating and is guaranteed for the life of the product. · Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. · VDRM is measured at IDRM. · VS is measured at 100 V/µs. · Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request. · Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for "AA" product. "AB" and "AC" capacitance is approximately 2x the listed value. · Device is designed to meet balance requirements of GTS 8700 and GR 974.
Surge Ratings
IPP 2x10 µs Amps 150 250 500 IPP 8x20 µs Amps 150 250 400 IPP 10x160 µs Amps 90 150 200 IPP 10x560 µs Amps 50 100 150 IPP 10x1000 µs Amps 45 80 100 I TSM 60 Hz Amps 20 30 50 di/dt Amps/µs 500 500 500
Series A B C
http ://www.teccor.com +1 972-580-7777
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© 2003 Teccor Electronics SIDACtor® Data Book and Design Guide
Balanced Three-chip SIDACtor Device
Thermal Considerations
Package Modified TO-220 Symbol TJ TS RJA Parameter Operating Junction Temperature Range Storage Temperature Range Thermal Resistance: Junction to Ambient Value -40 to +150 -65 to +150 50 Unit °C °C °C/W
PIN 1 PIN 2
PIN 3
+I +I
IPP Peak Pulse Current %IPP
tr = rise time to peak value td = decay time to half value
IT IT IS S IH IDRM
V --V VT VT VDRM VDRM VS V
S
100
Peak Value
Wavefor m = tr x td
+V +V
50
Half Value
0 0 tr td t Time (µs)
-I -I
V-I Characteristics tr x td Pulse Wave-form
14
Percent of VS Change %
10
IH (TC = 25 °C)
12 8 6 4 2 0 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 0 20 40 60 80 100 120 140 160
IH
25 °C
25 °C
Ratio of
Case Temperature (TC) °C
Junction Temperature (TJ) °C
Normalized VS Change versus Junction Temperature
Normalized DC Holding Current versus Case Temperature
© 2003 Teccor Electronics SIDACtor® Data Book and Design Guide
2 - 35
http:// www.teccor.com +1 972-580-7777
Data Sheets
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