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Details, datasheet, quote on part number:P3002AB
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Datasheet text preview:
Two-chip SIDACtor Device
Two-chip SIDACtor Device
1 (T) 3 (R) 2 (G)
The two-chip modified TO-220 SIDACtor solid state device protects telecommunication equipment in applications that reference Tip and Ring to earth ground but do not require balanced protection. SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).
Electrical Parameters
Part N u m be r * P0602A_ P1402A_ P1602A_ P2202A_ P2702A_ P3002A_ P3602A_ P4202A_ P4802A_ P6002A_ VDRM Volts 25 58 65 90 120 140 170 190 220 275 VS Volts 40 77 95 130 160 180 220 250 300 350 VDRM Volts 50 116 130 180 240 280 340 380 440 550 VS Volts 80 154 190 260 320 360 440 500 600 700 VT Volts 4 4 4 4 4 4 4 4 4 4 IDRM µAmps 5 5 5 5 5 5 5 5 5 5 IS mAmps 800 800 800 800 800 800 800 800 800 800 IT Amps 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 IH mAmps 50 150 150 150 150 150 150 150 150 150 CO pF 110 50 50 40 40 40 40 30 30 30
Pins 1-2, 3-2
Pins 1-3
* For individual "AA", "AB", and "AC" surge ratings, see table below. General Notes: · All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range. · IPP is a repetitive surge rating and is guaranteed for the life of the product. · Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. · VDRM is measured at IDRM. · VS is measured at 100 V/µs. · Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request. · Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for "AA" product. "AB" and "AC" capacitance is approximately 2x the listed value.
Surge Ratings
IPP 2x10 µs Amps 150 250 500 IPP 8x20 µs Amps 150 250 400 IPP 10x160 µs Amps 90 150 200 IPP 10x560 µs Amps 50 100 150 IPP 10x1000 µs Amps 45 80 100 I TSM 60 Hz Amps 20 30 50 di/dt Amps/µs 500 500 500
Series A B C
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© 2003 Teccor Electronics SIDACtor® Data Book and Design Guide
Two-chip SIDACtor Device
Thermal Considerations
Package Modified TO-220 Symbol TJ TS RJA Parameter Operating Junction Temperature Range Storage Temperature Range Thermal Resistance: Junction to Ambient Value -40 to +150 -65 to +150 50 Unit °C °C °C/W
PIN 1 PIN 2
PIN 3
+I +I
IPP Peak Pulse Current %IPP
tr = rise time to peak value td = decay time to half value
IT IT IS S IH IDRM
V --V VT VT VDRM VDRM VS V
S
100
Peak Value
Wavefor m = tr x td
+V +V
50
Half Value
0 0 tr td t Time (µs)
-I -I
V-I Characteristics tr x td Pulse Wave-form
14
Percent of VS Change %
10
IH (TC = 25 °C)
12 8 6 4 2 0 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 0 20 40 60 80 100 120 140 160
IH
25 °C
25 °C
Ratio of
Case Temperature (TC) °C
Junction Temperature (TJ) °C
Normalized VS Change versus Junction Temperature
Normalized DC Holding Current versus Case Temperature
© 2003 Teccor Electronics SIDACtor® Data Book and Design Guide
2 - 31
http:// www.teccor.com +1 972-580-7777
Data Sheets
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