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Part: TC660EPA
Category:
Power Management
Description: 100ma Charge Pump Dc-to-dc Voltage Converter
Company: TelCom Semiconductor
Datasheet: Download TC660EPA datasheet File size : 127 kB
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Datasheet text preview:
EVALUATION KIT AVAILABLE
1
TC660
100mA CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER
FEATURES
s s s s s s s s Pin Compatible with TC7660 High Output Current .... 100mA Converts (+1.5V to 5.5V) to ( 1.5V to 5.5V) Power Efficiency @100mA ....... 88% typ Low Power Consumption ....... 200µA @ 5 VIN Low Cost and Easy to Use -- Only Two External Capacitors Required Selectable Oscillator Frequency ....... 10kHz/90kHz ESD Protection ......... 4kV
GENERAL DESCRIPTION
The TC660 DC-to-DC voltage converter generates a negative voltage supply, that can support a 100mA maximum load, from a positive voltage input of 1.5V to 5.5V. Only two external capacitors are required. Power supply voltage is stored on an undedicated capacitor then inverted and transferred to an output reservoir capacitor. The on-board oscillator normally runs at a frequency of 10kHz with V+ at 5V. This frequency can be lowered by the addition of an external capacitor from OSC (pin 7) to ground, or raised to 90kHz by connecting the frequency control pin (FC) to V+, in order to optimize capacitor size, quiescent current, and output voltage ripple frequency. Operation using input voltage between 1.5V and 3.0V is accommodated by grounding the LV input (pin 6). Operation at higher input voltages (3.0V to 5.5V) is accomplished by leaving LV open. The TC660 open circuit output voltage is within 0.1% of the input voltage with the output open-circuited. Power conversion efficiency is 98% when output load is between 2mA and 5mA.
2 3 4 5 6 7
APPLICATIONS
s s s s Laptop Computers µP Based Controllers Process Instrumentation Automotive Instruments
PIN CONFIGURATION (DIP and SOIC)
8 V+ 7 OSC 8 V+ 7 OSC
ORDERING INFORMATION
Part No.
TC660COA TC660CPA TC660EOA TC660EPA
FC 1 CAP + 2
FC 1 CAP + 2 GND 3 CAP 4
Package
8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP
Temp. Range
0°C to +70°C 0°C to +70°C 40°C to +85°C 40°C to +85°C
GND 3 TC660CPA 6 LV CAP 4
TC660EPA
5 VOUT
TC660COA 6 LV TC660EOA
5 VOUT
TC7660EV
FUNCTIONAL BLOCK DIAGRAM
V + CAP + 8 FC 1 2
Evaluation Kit for Charge Pump Family
OSC
7
RC OSCILLATOR
÷2
VOLTAGE LEVEL TRANSLATOR
4
CAP
LV
6 5 INTERNAL VOLTAGE REGULATOR LOGIC NETWORK VOUT
TC660
3 GND
8
TC660-2 9/10/96
TELCOM SEMICONDUCTOR, INC.
4-5
100mA CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER TC660
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage .. +6V LV, FC, OSC Input Voltage (Note 1) ..... VOUT 0.3V to (V+ +0.3V) Current Into LV (Note 1) .... 20 µA for V+ >3.5V Output Short Duration (VSUPPLY 5.5V) (Note 3) .. 10 Sec Power Dissipation (Note 2) (TA 70°C) SOIC ...... 470mW Plastic DIP ...... 730mW Operating Temperature Range C Suffix ........ 0°C to +70°C E Suffix ............ 40°C to +85°C Storage Temperature Range ....... 65°C to +150°C Lead Temperature (Soldering, 10 sec) ........ +300°C
*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS: Specifications Measured Over Operating Temperature Range With,
V+ = 5V, COSC = Open, C1, C2 = 150µF, FC = Open, Test Circuit (Figure 1), unless otherwise indicated. Symbol
I+
Parameter
Supply Current
Test Conditions
RL = FC pin = OPEN or GND FC pin = V+ LV = HIGH, RL = 1 k LV = GND, RL = 1 k LV = OUT, RL = 1 k (Figure 9) IOUT = 100mA VOUT < 4V Pin 7 open; Pin 1 open or GND Pin 1 = V+ Pin 1 open Pin 1 = V+ RL = 1 k connected between V+ & VOUT RL = 500 connected between VOUT & GND IL = 100mA to GND RL =
V+
Min
-- -- 3 1.5 2.5 -- 100 -- -- -- -- 96 92 -- 99
Typ
200 1 -- -- -- 6.5 -- 10 90 +1.1 +5 98 96 88 99.9
Max
500 3 5.5 5.5 5.5 10 -- -- -- -- -- -- -- -- --
Unit
µA mA V
V+
Supply Voltage Range
ROUT IOUT F OSC I OSC PEFF
Output Source Resistance Output Current Oscillator Frequency Input Current Power Efficiency (Note 4)
mA kHz µA %
VOUT EFF
Voltage Conversion Efficiency
%
NOTES: 1. Connecting any input terminal to voltages greater than or less than GND may cause destructive latch-up. It is recommended that no inputs from sources operating from external supplies be applied prior to "power up" of the TC660. 2. Derate linearly above 50°C by 5.5 mW/°C. 3. To prevent damaging the device, do not short VOUT to V+. 4. To maximize output voltage and efficiency performance, use low ESR capacitors for C1 and C2.
4-6
TELCOM SEMICONDUCTOR, INC.
100mA CHARGE PUMP DC-TO-DC VOLTAGE CONVERTER TC660
TYPICAL CHARACTERISTICS
All curves are generated using the test circuit of Figure 1 with V+ = 5V, LV = GND, FC = open, and TA = +25°C, unless otherwise noted.
1)
600 500
1
2 3
Supply Current vs. Supply Voltage
2)
10,000
Supply Current vs. Oscillator Frequency
3)
100
Efficiency vs. Load Current
V+ = 5.5V
SUPPLY CURRENT (µA)
SUPPLY CURRENT (µA)
EFFICIENCY (%)
400 300 200
DOUBLER MODE LV = OUT
1000
DOUBLER MODE
92
84 V+ = 3.5V 76 V+ = 4.5V
100
LV = OPEN 100 LV = GND 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 SUPPLY VOLTAGE (V) 5.0 5.5
10
INVERTING MODE
68
V+ = 2.5V V+ = 1.5V 0 20 40 60 80 LOAD CURRENT (mA) 100
1 0.01 0.1 1 10 OSCILLATOR FREQUENCY (kHz)
100
60
4 5
4)
2.0
Output Voltage Drop vs. Load Current
5)
-5.0
Output Voltage vs. Oscillator Frequency
6)
100 96
Efficiency vs. Oscillator Frequency
ILOAD = 10mA
OUTPUT VOLTAGE DROP FROM SUPPLY VOLTAGE (V)
V+ = 3.5V 1.2 V+ = 1.5V V+ = 2.5V V+ = 4.5V
OUTPUT VOLTAGE (V)
1.6
-4.5 ILOAD = 1mA -4.0
POWER EFFICIENCY (%)
ILOAD = 10mA
92 88 84 80 76 72 68 64 ILOAD = 1mA 0.1 0.2 0.4 124 10 20 40 OSCILLATOR FREQUENCY (kHz) 100 ILOAD = 80mA
ILOAD = 80mA
0.8
-3.5
0.4 V+ = 5.5V 0 0 20 40 60 80 LOAD CURRENT (mA) 100
-3.0 0.1 0.2 0.4 124 10 20 40 OSCILLATOR FREQUENCY (kHz)
100
60
6 7
7)
15
Output Source Resistance vs. Supply Voltage
8)
OUTPUT SOURCE RESISTANCE ()
16 14 12 10
Output Source Resistance vs. Temperature
V+ = 1.5VDC
9)
12
Oscillator Frequency vs. Supply Voltage
LV GROUNDED 10 8 6 FC = OPEN, OSC = OPEN 4 2 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 SUPPLY VOLTAGE (V) LV OPEN
OUTPUT SOURCE RESISTANCE ()
12
9
6
V+ = 3VDC 8 6 V+ = 5VDC 4 -40 -20 0 20 40 60 80 100
3
OSCILLATOR FREQUENCY (kHz)
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
8
TELCOM SEMICONDUCTOR, INC.
4-7
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