Details, datasheet, quote on part number: TC682
PartTC682
CategoryRF & Microwaves => Frequency Doublers
DescriptionInverting Voltage Doubler
CompanyTelCom Semiconductor
DatasheetDownload TC682 datasheet
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Features, Applications

FEATURES

99.9% Voltage Conversion Efficiency 92% Power Conversion Efficiency Wide Input Voltage Range............... to +5.5V Only 3 External Capacitors Required 185µA Supply Current Space-Saving 8-Pin SOIC and 8-Pin Plastic DIP Packages

The is a CMOS charge pump converter that provides an inverted doubled output from a single positive supply. An on-board 12kHz (typical) oscillator provides the clock and only 3 external capacitors are required for full circuit implementation. Low output source impedance (typically 140), provides output current to 10mA. The TC682 features low quiescent current and high efficiency, making it the ideal choice for a wide variety of applications that require a negative voltage derived from a single positive supply (for example: generation ­ 6V from a 3V lithium cell ­ 10V generated from a +5V logic supply). The minimum external parts count and small physical size of the TC682 make it useful in many medium-current, dual voltage analog power supplies.

APPLICATIONS

10V from +5V Logic Supply ­ 6V from a Single 3V Lithium Cell Portable Handheld Instruments Cellular Phones LCD Display Bias Generator Panel Meters Operational Amplifier Power Supplies

8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP Evaluation Kit for Charge Pump Family

VIN.......................................................................... +5.8V VIN dV/dT............................................................. 1V/µsec VOUT......................................................................­ 11.6V VOUT Short-Circuit Duration............................ Continuous Power Dissipation (TA 70°C) Plastic DIP........................................................... 730mW SOIC...............................................................470mW Storage Temperature Range................ to +150°C Lead Temperature (Soldering, 10 sec)................. +300°C

*This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS: Over Operating Temperature Range, VIN = +5V, test circuit Figure 1,

Supply Voltage Range Supply Current VOUT Source Resistance Source Resistance Oscillator Frequency Power Efficiency Voltage Conversion Efficiency

TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement.

Input. Capacitor C1 negative terminal. Input. Capacitor C2 positive terminal. Input. Capacitor C2 negative terminal Output. Negative output voltage 2VIN) Input. Device ground. Input. Power supply voltage. Input. Capacitor C1 positive terminal No Connection

Theoretically a charge pump voltage multiplier can approach 100% efficiency under the following conditions: The charge pump switches have virtually no offset and are extremely low on resistance. Minimal power is consumed by the drive circuitry The impedances of the reservoir and pump capacitors are negligible. For the TC682, efficiency is as shown below:

VSS charge storage ­ before this phase of the clock + cycle, capacitor C1 is already charged C1 is then ­ switched to ground and the charge C1 is transferred to C2 Since at +5V, the voltage potential across capacitor C2 is now ­10V.

Voltage Efficiency = VOUT / 2VIN) VOUT 2VIN + VDROP = (IOUT) (ROUT) Power Loss = IOUT (VDROP)

VSS transfer ­ phase two of the clock connects the negative terminal C2 to the negative side of reservoir capacitor C3 and the positive terminal C2 to ground, transferring the generated to C3. Simultaneously, the positive side of capacitor C1 is switched to +5V and the negative side is connected to ground. C2 is then switched to VCC and GND and Phase 1 begins again.

There will be a substantial voltage difference between V­ OUT and 2 VIN if the impedances of the pump capacitors C1 and C2 are high with respect to their respective output loads. Larger values of reservoir capacitor C3 will reduce output ripple. Larger values of both pump and reservoir capacitors improve the efficiency. See "Capacitor Selection" in Applications section.

The most common application of the as a charge pump voltage converter which provides a negative output of two times a positive input voltage (Figure 4).

The TC682 has on-chip zener diodes that clamp VIN to ­ approximately 5.8V, and VOUT ­ 11.6V. Never exceed the maximum supply voltage or excessive current will be shunted by these diodes, potentially damaging the chip. The TC682 will operate over the entire operating temperature range with an input voltage to 5.5V. TELCOM SEMICONDUCTOR, INC.


 

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