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Part: INA169NA/250
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
-> Instrumentation Amplifiers
-> Difference Amplifiers
Description: ti INA169, High-side Measurement Current Shunt Monitor
Company: Texas Instruments, Inc.
Datasheet: Download INA169NA/250 datasheet File size : 253 kB
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Datasheet text preview:
INA139 INA169
SBOS181B DECEMBER 2000 REVISED SEPTEMBER 2003
High-Side Measurement CURRENT SHUNT MONITOR
FEATURES
q COMPLETE UNIPOLAR HIGH-SIDE CURRENT MEASUREMENT CIRCUIT q WIDE SUPPLY AND COMMON-MODE RANGE q INA139: 2.7V to 40V q INA169: 2.7V to 60V q INDEPENDENT SUPPLY AND INPUT COMMONMODE VOLTAGES q SINGLE RESISTOR GAIN SET q LOW QUIESCENT CURRENT (60µA typ) q SOT23-5 PACKAGE
DESCRIPTION
The INA139 and INA169 are high-side, unipolar, current shunt monitors. Wide input common-mode voltage range, high-speed, low quiescent current, and tiny SOT23 packaging enable use in a variety of applications. Input common-mode and power-supply voltages are independent and can range from 2.7V to 40V for the INA139 and 2.7V to 60V for the INA169. Quiescent current is only 60µA, which permits connecting the power supply to either side of the current measurement shunt with minimal error. The device converts a differential input voltage to a current output. This current is converted back to a voltage with an external load resistor that sets any gain from 1 to over 100. Although designed for current shunt measurement, the circuit invites creative applications in measurement and level shifting. Both the INA139 and INA169 are available in SOT23-5 packages and are specified for the 40°C to +85°C industrial temperature range.
APPLICATIONS
q CURRENT SHUNT MEASUREMENT: Automotive, Telephone, Computers q PORTABLE AND BATTERY-BACKUP SYSTEMS q BATTERY CHARGERS q POWER MANAGEMENT q CELL PHONES q PRECISION CURRENT SOURCE
RS V IN+ Up to 60V 3 VI N + 1 k 4
IS
VIN 1 k
Load
V+ 5
OUT GND 2 1 RL
V O = I S R S R L / 1 k
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 2000, 2003, Texas Instruments Incorporated
www.ti.com
PACKAGE /ORDERING INFORMATION
PACKAGE DESIGNATOR(1) DBV SPECIFIED TEMPERATURE RANGE 40°C to +85°C PACKAGE MARKING E39 ORDERING NUMBER INA139NA/250 INA139NA/3K INA169NA/250 INA169NA/3K TRANSPORT MEDIA, QUANTITY Tape and Reel, 250 Tape and Reel, 3000 Tape and Reel, 250 Tape and Reel, 3000
PRODUCT INA139
PACKAGE-LEAD SOT23-5 Surface-Mount
"
INA169
"
SOT23-5 Surface-Mount
"
DBV
"
40°C to +85°C
"
A69
"
"
"
"
"
NOTE: (1) For the most current specifications and package information, refer to our web site at www.ti.com.
ABSOLUTE MAXIMUM RATINGS(1)
Supply Voltage, V+ INA139 ....... 0.3V to 60V INA169 ....... 0.3V to 75V Analog Inputs, VIN+, VIN INA139 Common Mode ...... 0.3V to 60V Differential (VIN+) (VIN) ........ 40V to 2V INA169 Common Mode ...... 0.3V to 75V Differential (VIN+) (VIN) ........ 40V to 2V Analog Output, Out ..... 0.3V to 40V Operating Temperature ........ 55°C to +125°C Storage Temperature ..... 55°C to +125°C Junction Temperature ........... +150°C Lead Temperature (soldering, 10s) ..... +300°C NOTE: (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
ELECTROSTATIC DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PIN CONFIGURATION
Top View SOT
OUT GND VI+ N
1 2 3
5
V+
4
VI N
2
INA139, INA169
www.ti.com
SBOS181B
ELECTRICAL CHARACTERISTICS
At TA = 40°C to +85°C, VS = 5V, VIN+ = 12V, and ROUT = 25k, unless otherwise noted. INA139NA PARAMETER INPUT Full-Scale Sense Voltage Common-Mode Input Range Common-Mode Rejection Offset RTI vs Temperature vs Power Supply, V+ Input Bias Current OUTPUT Transconductance vs Temperature Nonlinearity Error Total Output Error Output Impedance Voltage Output Swing to Power Supply, V+ Swing to Common Mode, VCM FREQUENCY RESPONSE Bandwidth Settling Time (0.1%) NOISE Output-Current Noise Density Total Output-Current Noise POWER SUPPLY Operating Range, V+ Quiescent Current TEMPERATURE RANGE Specification, TMIN to TMAX Operating Storage Thermal Resistance Voltage(1) CONDITION VSENSE = (VIN+) (VIN) VIN+ = 2.7V to 40V, VSENSE = 50mV VIN+ = 2.7V to 60V, VSENSE = 50mV TMIN to TMAX V = 2.7V to 40V, VSENSE = 50mV V = 2.7V to 60V, VSENSE = 50mV (VIN+) (VIN) VSENSE = 10mV 150mV VSENSE = 100mV VSENSE = 10mV to 150mV VSENSE = 100mV 990 2.7 100 MIN TYP 100 115 100 ±0.2 1 0.5 10 1000 10 ±0.01 ±0.5 1 || 5 1010 ±0.1 ±2 ±1 10 0.1 40 125 85 125 150 200 60 10 120 MAX 500 40 MIN INA169NA TYP MAX 60 UNITS mV V dB dB mV µV/°C µV/V µV/V uA µA/V nA/°C % % G || pF V V kHz kHz µs µs pA/Hz nA RMS V µA °C °C °C °C/W
(V+) 0.9 (V+) 1.2 VCM 0.6 VCM 1.0 ROUT = 10k ROUT = 20k 5V Step, ROUT = 10k 5V Step, ROUT = 20k 440 220 2.5 5.0 20 7 2.7 VSENSE = 0, IO = 0 40 55 65 60
BW = 100kHz
JA
Specification same as for the INA139NA. NOTE: (1) Defined as the amount of input voltage, VSENSE, to drive the output to zero.
INA139, INA169
SBOS181B
www.ti.com
3
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IN-1 IN-2 IN-3 IN-4 IN-5 IN-6 IN-7
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