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Part: INA170EA/2K5
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
-> Instrumentation Amplifiers
-> Difference Amplifiers
Description: ti INA170, High-side (Without Internal Reference) Bidirectional Current Shunt Monitor
Company: Texas Instruments, Inc.
Datasheet: Download INA170EA/2K5 datasheet File size : 253 kB
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Datasheet text preview:
INA170
SBOS193A MARCH 2001 REVISED NOVEMBER 2003
High-Side, Bidirectional CURRENT SHUNT MONITOR
FEATURES
q COMPLETE BIDIRECTIONAL CURRENT MEASUREMENT CIRCUIT q WIDE SUPPLY RANGE: 2.7V to 40V q SUPPLY-INDEPENDENT COMMON-MODE VOLTAGE: 2.7V TO 60V q RESISTOR PROGRAMMABLE GAIN SET q LOW QUIESCENT CURRENT: 75µA (typ) q MSOP-8 PACKAGE
DESCRIPTION
The INA170 is a high-side, bidirectional current shunt monitor featuring a wide input common-mode voltage range, low quiescent current, and a tiny MSOP-8 package. Bidirectional current measurement is accomplished by output offsetting. The offset voltage level is set with an external resistor and voltage reference. This permits measurement of a bidirectional shunt current while using a single supply for the INA170. Input common-mode and power-supply voltages are independent. Input voltage can range from +2.7V to +60V on any supply voltage from +2.7V to +40V. Low 10µA input bias current adds minimal error to the shunt current. The INA170 converts a differential input voltage to a current output. This current develops a voltage across an external load resistor, setting any gain from 1 to over 100. The INA170 is available in an MSOP-8 package, and is specified over the extended industrial temperature range, 40°C to +85°C with operation from 55°C to +125°C.
APPLICATIONS
q CURRENT SHUNT MEASUREMENT: Automotive, Telephone, Computers, Power Systems, Test, General Instrumentation q PORTABLE & BATTERY-BACKUP SYSTEMS q BATTERY CHARGERS q POWER MANAGEMENT q CELL PHONES
V+ VSUPPLY RG1 1k 8
+ VIN
2
IS
RS
VI N
1
RG2 1k
A1
Q1 6 OUT
VREF Load ROS
3 A2 5 Q2 INA170 RL
ROS
GND
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 2001-2003, Texas Instruments Incorporated
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PACKAGE /ORDERING INFORMATION
PACKAGE DRAWING NUMBER DGK SPECIFIED TEMPERATURE RANGE 40°C to +85°C PACKAGE MARKING INA170EA ORDERING NUMBER(1) INA170EA/250 INA170EA/2K5 TRANSPORT MEDIA Tape and Reel Tape and Reel
PRODUCT INA170EA
PACKAGE MSOP-8
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NOTE: (1) Models with a slash (/) are available only in Tape and Reel in the quantities indicated (e.g., /2K5 indicates 2500 devices per reel). Ordering 2500 pieces of "INA170NA/2K5" will get a single 2500-piece Tape and Reel.
ABSOLUTE MAXIMUM RATINGS(1)
Supply Voltage, V+ to GND ....... 0.3V to 40V Analog Inputs, Common Mode ........... 0.3V to 75V Differential (VI+ ) (VI ) .......... 40V to 2V N N Analog Output, Out ..... 0.3V to 40V Operating Temperature ........ 55°C to +125°C Storage Temperature ..... 65°C to +150°C Junction Temperature ........... +150°C Lead Temperature (soldering, 10s) ..... +300°C NOTE: (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
ELECTROSTATIC DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
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INA170
www.ti.com
SBOS193A
ELECTRICAL CHARACTERISTICS
At TA = 40°C to +85°C, VS = 5V, VI+ = 12V, ROUT = 25k, unless otherwise noted. N INA170EA PARAMETER INPUT Full-Scale Sense (Input) Voltage Common-Mode Input Range Common-Mode Rejection Offset Voltage(1) RTI vs Temperature vs Power Supply Input Bias Current OFFSETTING AMPLIFIER Offsetting Equation Input Voltage Input Offset Voltage vs Temperature Programming Current through ROS Input Impedance Input Bias Current OUTPUT Transconductance vs Temperature Nonlinearity Error Total Output Error Output Impedance Voltage Output Swing to Power Supply, V+ Swing to Common Mode, VCM FREQUENCY RESPONSE Bandwidth Settling Time (0.1%) NOISE Output-Current Noise Density Total Output-Current Noise POWER SUPPLY Operating Range Quiescent Current TEMPERATURE RANGE Specification, TMIN to TMAX Operating Storage Thermal Resistance, JA NOTE: (1) Defined as the amount of input voltage, VSENSE, to drive the output to zero. CONDITION VSENSE = VI+ VI N N VI+ = +2.7V to +60V, VSENSE = 50mV N TMIN to TMAX V+ = +2.7V to +60V, VSENSE = 50mV VI+ , VI N N VOS = (RL/ROS) VREF 1 TMIN to TMAX 0 VI+ , VI N N VSENSE = 10mV to 150mV VSENSE = 100mV VSENSE = 10mV to 150mV VSENSE = 100mV 0.990 1010 || 4 +10 1 50 ±0.01 ±0.5 1 || 5 (V+) 0.9 VCM 0.6 ROUT = 10k 5V Step, ROUT = 10k 400 3 20 7 +2.7 75 40 55 65 150 +60 125 85 125 150 1.01 ±0.1 ±2 ±0.2 10 VS 1 ±1 1 V mV µV/°C mA || pF nA mA/V nA/°C % % G || pF V V kHz µs pA/Hz nA RMS V µA °C °C °C °C/W +2.7 100 MIN TYP 100 120 ±0.2 1 0.1 10 MAX 500 +60 ±1 10 UNITS mV V dB mV µV/°C µV/V uA
(V+) 1.2 VCM 1.0
BW = 100kHz V+ VSENSE = 0, IO = 0
PIN CONFIGURATION
TOP VIEW VI N VI+ N VR E F GND 1 2 3 4 8 7 6 5 V+ NC OUT R OS MSOP
PIN DESCRIPTION
PIN 1 2 3 4 5 6 7 8 DESIGNATOR VI N VI+ N VREF GND ROS OUT NC V+ DESCRIPTION Inverting Input Noninverting Input Reference Voltage Input Ground Offset Resistor Output No Connection Supply Voltage
INA170
SBOS193A
www.ti.com
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