Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon npn Phototransistor High Direct-Current Transfer Ratio Base Lead Provided for Conventional Transistor Biasing High-Voltage Electrical Isolation. or 3.55-kV Rating Plastic Dual-In-Line Package High-Speed Switching: = 5 µs, 5 µs Typical Designed to be Interchangeable with General Instruments MCT2 and MCT2E
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)
Input-to-output voltage: 3.55 kV Collector-base voltage. 70 V Collector-emitter voltage (see Note 30 V Emitter-collector voltage. 7 V Emitter-base voltage. 7 V Input-diode reverse voltage. 3 V Input-diode continuous forward current. 60 mA Input-diode peak forward current (tw 1 ns, PRF 300 Hz). 3 A Continuous power dissipation at (or below) 25°C free-air temperature: Infrared-emitting diode (see Note 200 mW Phototransistor (see Note 200 mW Total, infrared-emitting diode plus phototransistor (see Note 250 mW Operating free-air temperature range, TA. to 100°C Storage temperature range, Tstg. to 150°C Lead temperature mm (1/16 inch) from case for 10 seconds. 260°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. This value applies when the base-emitter diode is open-circulated. 2. Derate linearly 100 °C free-air temperature at the rate of 2.67 mW/°C. 3. Derate linearly 100 °C free-air temperature at the rate of 3.33 mW/°C.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
electrical characteristics at 25°C free-air temperature (unless otherwise noted)
PARAMETER V(BR)CBO V(BR)CEO V(BRECO) IR IC(on) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-collector breakdown voltage Input diode static reverse current On-state collector current Phototransistor operation Photodiode operation IC(off) Off-state collector current Phototransistor operation Photodiode operation HFE VF VCE(sat) rIO Cio Transistor static forward current transfer ratio Input diode static forward voltage Collector-emitter saturation voltage Input-to-output internal resistance TEST CONDITIONS = 10 µA, IC =1 mA, = 100 µA, 3 V VCE 10 V, VCB 10 V, VCE 10 V, VCB 10 V, VCE = 100 µA, = 2 mA, = 0 MIN 50 20 TYP MAX UNIT µA nA
NOTE 4: These parameters are measured between both input diode leads shorted together and all the phototransistor leads shorted together.
PARAMETER tr tf Rise time Fall time Rise time Fall time Phototransistor operation Photodiode operation TEST CONDITIONS VCC 100 , VCC 1 k, IC(on) = 2 mA, , See Test Circuit A of Figure 1 IC(on) 20 µA, See Test Circuit B of Figure 1 MIN TYP 5 1 MAX UNIT µs
47 Input 0V Output (see Note + VCC = 100 Input 47 Input 90% 10% Output VCC V tf Output (see Note 1 k
NOTES: A. The input waveform is supplied by a generator with the following characteristics: tr 15 ns, duty cycle = 100 µs. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr 12 ns, Rin 1 M, Cin 20 pF.