400 V Phototriac Driver Output Gallium-Arsenide-Diode Infrared Source and Optically-Coupled Silicon Traic Driver (Bilateral Switch) UL Recognized. File Number E65085 High Isolation. 7500 V Peak Output Driver Designed for 220 Vac Standard 6-Terminal Plastic DIP Directly Interchangeable with Motorola MOC3021, MOC3022, and MOC3023
typical 115/240 Vac(rms) applications D Solenoid/Valve Controls D Lamp Ballasts D Interfacing Microprocessors to 115/240 Vac Peripherals D Motor Controls D Incandescent Lamp Dimmers
absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)
Input-to-output peak voltage, 5 s maximum duration, 60 Hz (see Note 7.5 kV Input diode reverse voltage. 3 V Input diode forward current, continuous. 50 mA Output repetitive peak off-state voltage. 400 V Output on-state current, total rms value (50-60 Hz, full sine wave): 50 mA Output driver nonrepetitive peak on-state current (tw = 10 ms, duty cycle = 10%, see Figure 1.2 A Continuous power dissipation at (or below) 25°C free-air temperature: Infrared-emitting diode (see Note 100 mW Phototriac (see Note 300 mW Total device (see Note 330 mW Operating junction temperature range, TJ. to 100°C Storage temperature range, Tstg. to 150°C Lead temperature 1,6 (1/16 inch) from case for 10 seconds. 260°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. Input-to-output peak voltage is the internal device dielectric breakdown rating. 2. Derate linearly to 100°C free-air temperature at the rate of 1.33 mW/°C. 3. Derate linearly to 100°C free-air temperature at the rate of 4 mW/°C. 4. Derate linearly to 100°C free-air temperature at the rate of 4.4 mW/°C.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
electrical characteristics at 25°C free-air temperature (unless otherwise noted)
PARAMETER IR VF I(DRM) dv/dt dv/dt(c) Static reverse current Static forward voltage Repetitive off-state current, either direction Critical rate of rise of off-state voltage Critical rate of rise of commutating voltage MOC3020 IFT Input trigger gg current, , either direction MOC3022 MOC3023 VTM IH Peak on-state voltage, either direction Holding current, either direction ITM 100 mA Output supply voltage 10 mA V(DRM) 400 V, See Figure = 15 mA, See Note 5 See Figure 1 TEST CONDITIONS MIN TYP µA mA MAX 1.5 100 UNIT V nA V/µs
NOTE 5: Test voltage must be applied at a rate no higher than 12 V/µs.
NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input 0 V. The frequency of Vin is increased until the phototriac turns on. This frequency is then used to calculate the dv/dt according to the formula:
The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-V pulses to the input and increasing the frequency of Vin until the phototriac stays on (latches) after the input pulse has ceased. With no further input pulses, the frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs may then be used to calculate the dv/dt(c) according to the formula shown above.
Figure 1. Critical Rate of Rise Test Circuit
EMITTING-DIODE TRIGGER CURRENT (NORMALIZED) vs FREE-AIR TEMPERATURE
NONREPETITIVE PEAK ON-STATE CURRENT vs PULSE DURATION