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Details, datasheet, quote on part number:OPT101P-J
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| Part: | OPT101P-J |
| Category: | Optoelectronics => Photosensors => Light to Voltage |
| Description: | ti OPT101, Monolithic Photodiode And Single-supply Transimpedance Amplifier |
| Company: | Texas Instruments, Inc. |
| Datasheet: | Download OPT101P-J datasheet File size : 304 kB |
| Request For quote: | Find where to buy OPT101P-J
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Datasheet text preview:
OPT101
SBBS002A JANUARY 1994 REVISED OCTOBER 2003
MONOLITHIC PHOTODIODE AND SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER
FEATURES
q q q q q q q SINGLE SUPPLY: +2.7 to +36V PHOTODIODE SIZE: 0.090 x 0.090 inch INTERNAL 1M FEEDBACK RESISTOR HIGH RESPONSIVITY: 0.45A/W (650nm) BANDWIDTH: 14kHz at RF = 1M LOW QUIESCENT CURRENT: 120µA AVAILABLE IN 8-PIN DIP AND 8-LEAD SURFACE-MOUNT PACKAGES
DESCRIPTION
The OPT101 is a monolithic photodiode with on-chip transimpedance amplifier. Output voltage increases linearly with light intensity. The amplifier is designed for single or dual power-supply operation, making it ideal for batteryoperated equipment. T h e integrated combination of photodiode and transimpedance amplifier on a single chip eliminates the problems commonly encountered in discrete designs such as leakage current errors, noise pick-up, and gain peaking due to stray capacitance. The 0.09 x 0.09 inch photodiode is operated in the photoconductive mode for excellent linearity and low dark current. The OPT101 operates from +2.7V to +36V supplies and quiescent current is only 120µA. It is available in clear plastic 8-pin DIP, and J-formed DIP for surface mounting. Temperature range is 0°C to +70°C.
APPLICATIONS
q q q q q q q MEDICAL INSTRUMENTATION LABORATORY INSTRUMENTATION POSITION AND PROXIMITY SENSORS PHOTOGRAPHIC ANALYZERS BARCODE SCANNERS SMOKE DETECTORS CURRENCY CHANGERS
V+ 2 3pF 1
SPECTRAL RESPONSIVITY
Green Yellow
0.7
Blue
Ultraviolet
0.7
Red
Infrared
0.6
0.6 0.5
4
Voltage Output (V/µW)
1M 8pF
0.5 0.4 0.3 0.2 0.1
Using Internal 1M Resistor
0.4 0.3 0.2 0.1 0 1000 1100
5 7.5mV
VB OPT101 8 3
0
200 300 400 500 600 700 800 Wavelength (nm) 900
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 1994-2003, Texas Instruments Incorporated
www.ti.com
Photodiode Responsivity (A/W)
SPECIFICATIONS
At TA = +25°C, VS = +2.7V to +36V, = 650nm, internal 1M feedback resistor, and RL = 10k, unless otherwise noted. OPT101P PARAMETER RESPONSIVITY Photodiode Current Voltage Output vs Temperature Unit to Unit Variation Nonlinearity(1) Photodiode Area DARK ERRORS, RTO(2) Offset Voltage, Output vs Temperature vs Power Supply Voltage Noise, Dark, fB = 0.1Hz to 20kHz TRANSIMPEDANCE GAIN Resistor Tolerance, P W vs Temperature FREQUENCY RESPONSE Bandwidth Rise Fall Time, 10% to 90% Settling Time, 0.05% 0.1% 1% Overload Recovery OUTPUT Voltage Output, High Capacitive Load, Stable Operation Short-Circuit Current POWER SUPPLY Operating Voltage Range Quiescent Current TEMPERATURE RANGE Specification Operating Storage Thermal Resistance, JA CONDITIONS 650nm 650nm 650nm FS Output = 24V (0.090 x 0.090in) (2.29 x 2.29mm) MIN TYP 0.45 0.45 100 ±5 ±0.01 0.008 5.2 MAX UNITS A/W V/µW ppm/°C % % of FS in2 mm2
+5 VS = +2.7V to +36V VS = +15V, VPIN3 = 15V
+7.5 ±10 10 300
+10 100
mV µV/°C µV/V µVrms M % % ppm/°C kHz µs µs µs µs µs V nF mA
1 ±0.5 ±0.5 ±50 VOUT = 10Vp-p VOUT = 10V Step VOUT = 10V Step 14 28 160 80 70 50
±2
100%, Return to Linear Operation
(VS) 1.3 VS = 36V +2.7 Dark, VPIN3 = 0V RL = , VOUT = 10V 0 0 25
(VS) 1.15 10 15
120 220
+36 240
V µA µA °C °C °C °C/W
+70 +70 +85 100
NOTES: (1) Deviation in percent of full scale from best-fit straight line. (2) Referred to Output. Includes all error sources.
PHOTODIODE SPECIFICATIONS
TA = +25°C, VS = +2.7V to +36V unless otherwise noted. Photodiode of OPT101P PARAMETER Photodiode Area Current Responsivity Dark Current vs Temperature Capacitance CONDITIONS (0.090 x 0.090in) (2.29 x 2.29mm) 650nm 650nm VDIODE = 7.5mV MIN TYP 0.008 5.2 0.45 865 2.5 Doubles every 7°C 1200 MAX UNITS in2 mm2 A/W µA/W/cm2 pA pF
2
OPT101
www.ti.com
SBBS002A
OP AMP SPECIFICATIONS
At TA = +25°C, VS = +2.7V to +36V, = 650nm, internal 1M feedback resistor, and RL = 10k, unless otherwise noted. OPT101 Op Amp(1) PARAMETER INPUT Offset Voltage vs Temperature vs Power Supply Input Bias Current vs Temperature Input Impedance Differential Common-Mode Common-Mode Input Voltage Range Common-Mode Rejection OPEN-LOOP GAIN Open-loop Voltage Gain FREQUENCY RESPONSE Gain-Bandwidth Product(2) Slew Rate Settling Time 1% 0.1% 0.05% OUTPUT Voltage Output, High Short-Circuit Current POWER SUPPLY Operating Voltage Range Quiescent Current (VS) 1.3 VS = +36V +2.7 Dark, VPIN3 = 0V RL = , VOUT = 10V 120 220 CONDITIONS MIN TYP ±0.5 ±2.5 10 165 Doubles every 10°C 400 || 5 250 || 35 0 to [(VS) 1] 90 90 2 1 5.8 7.7 8.0 (VS) 1.15 15 +36 240 MAX UNITS mV µV/°C µV/V pA
() Input () Input
Linear Operation
M || pF G || pF V dB dB MHz V/µs µs µs µs V mA V µA µA
NOTES: (1) Op amp specifications provided for information and comparison only. (2) Stable gains 10V/V.
OPT101
SBBS002A
www.ti.com
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