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Details, datasheet, quote on part number:SN0309050DBVR
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| Part: | SN0309050DBVR |
| Category: | Power Management => Regulators => Linear Regulators => LDO (Low Drop Out) |
| Description: | ti SN0309050, Ultralow-Noise, High Psrr, Fast RF 200-mA LDO Regulators |
| Company: | Texas Instruments, Inc. |
| Datasheet: | Download SN0309050DBVR datasheet File size : 308 kB |
| Request For quote: | Find where to buy SN0309050DBVR
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Datasheet text preview:
DBV 5
SN0309050 SN0309051
SLVS505 OCTOBER 2003
www.ti.com
ULTRALOW-NOISE, HIGH PSRR, FAST RF 200-mA LOW-DROPOUT LINEAR REGULATORS
FEATURES
· · · · · · · · · 200-mA RF Low-Dropout Regulator With Enable Available in 1.8-V, 2.85-V High PSRR (70 dB at 10 kHz) Ultralow Noise Fast Start-Up Time (50 µs) Stable With a 2.2-µF Ceramic Capacitor Excellent Load/Line Transient Response Very Low Dropout Voltage (120 mV at Full Load, SN0309051) 5-Pin SOT23 (DBV)
DESCRIPTION
The SN030905x family of low-dropout (LDO) low-power linear voltage regulators features high power supply rejection ratio (PSRR), ultralow noise, fast start-up, and excellent line and load transient response in the SOT23 package. An ultralow profile and package weight, make the devices ideal for portable applications such as handsets and PDAs. Each device in the family is stable, with a small 2.2-µF ceramic capacitor on the output. The SN030905x family uses an advanced, proprietary BiCMOS fabrication process to yield extremely low dropout voltages (e.g., 120 mV at 200 mA, SN0309050). Each device achieves fast start-up times (approximately 50 µs with a 0.001-µF bypass capacitor) while consuming very low quiescent current (170-µA typical). Moreover, when the device is placed in standby mode, the supply current is reduced to less than 1 µA. The TPS79328 exhibits approximately 32 µVRMS of output voltage noise with a 0.1-µF bypass capacitor. Applications with analog components that are noise sensitive, such as portable RF electronics, benefit from the high PSRR and low-noise features as well as the fast response time.
TPS79328
APPLICATIONS
· · · · · Cellular and Cordless Telephones BluetoothTM, Wireless LAN RF VCOs Handheld Organizers, PDA
TPS79328
DBV PACKAGE (TOP VIEW) IN GND EN 1 2 3 4 BYPASS 5 OUT
OUTPUT SPECTRAL NOISE DENSITY vs FREQUENCY
Hz 0.3 VI = 3.8 V Co = 2.2 µF C(byp) = 0.1 µF µ V/
RIPPLE REJECTION vs FREQUENCY
100 90 80 Ripple Rejection - dB 70 60 50 40 30 20 10 VI = 3.8 V Co = 10 µF C(byp) = 0.01 µF 10 100 1k 10 k 100 k 1M 10 M IO = 10 mA IO = 200 mA
0.25 0.2
Output Spectral Noise Density -
Fixed Option
0.15 IO = 1 mA 0.1 IO = 200 mA 0.05
0 100 1k 10 k f - Frequency - Hz 100 k
0
f - Frequency - Hz
Bluetooth is a trademark of Bluetooth Sig, Inc. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 2003, Texas Instruments Incorporated
SN0309050 SN0309051
SLVS505 OCTOBER 2003 www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
AVAILABLE OPTIONS
TJ -40°C to 125°C VOLTAGE 1.8 V 2.85 V PACKAGE SOT23 (DBV) SOT23 (DBV) PART NUMBER SN0309051DBVR (1) SN0309050DBVR (1) SYMBOL PHHI PHII
(1)
The DBVR indicates tape and reel of 3000 parts.
ABSOLUTE MAXIMUM RATINGS
over operating temperature range (unless otherwise noted) (1)
UNIT Input voltage range Voltage range at EN Voltage range at OUT Peak output current ESD rating, HBM ESD rating, CDM Continuous total power dissipation Operating junction temperature range, DBV package Operating ambient temperature range, TA Storage temperature range, Tstg (1) -0.3 V to 6 V -0.3 V to VI + 0.3 V -0.3 V to 6 V Internally limited 2 kV 500 V See Dissipation Rating Table -40°C to 150°C -40°C to 85°C -65°C to 150°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DISSIPATION RATING TABLE
BOARD Low K (1) High K (2) (1) (2) PACKAGE DBV DBV RJC 65°C/W 65°C/W RJA 255°C/W 180°C/W DERATING FACTOR ABOVE TA = 25°C 3.9 mW/°C 5.6 mW/°C TA 25°C POWER RATING 390 mW 560 mW TA = 70°C POWER RATING 215 mW 310 mW TA = 85°C POWER RATING 155 mW 225 mW
The JEDEC low K (1s) board design used to derive this data was a 3-inch x 3-inch, two layer board with 2 ounce copper traces on top of the board. The JEDEC high K (2s2p) board design used to derive this data was a 3-inch x 3-inch, multilayer board with 1 ounce internal power and ground planes and 2 ounce copper traces on top and bottom of the board.
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SN0309050 SN0309051
www.ti.com SLVS505 OCTOBER 2003
ELECTRICAL CHARACTERISTICS
over recommended operating temperature range EN = VI, TJ = -40 to 125 °C, VI = VO(typ) + 1 V, IO= 1 mA, Co = 10 µF, C(byp) = 0.01 µF (unless otherwise noted)
PARAMETER VI Input voltage (1) IO Continuous output current TJ Operating junction temperature SN0309051 Output voltage SN0309050 Quiescent current (GND current) Load regulation Output voltage line regulation (VO/VO) (2) TJ = 25°C 0 µA< IO < 200 mA, TJ = 25°C 0 µA< IO < 200 mA, 0 µA< IO < 200 mA, 0 µA< IO < 200 mA 0 µA< IO < 200 mA, VO + 1 V < VI 5.5 V, VO + 1 V < VI 5.5 V C(byp) = 0.001 µF Output noise voltage (TPS79328) BW = 200 Hz to 100 kHz,IO = 200 mA, TJ = 25°C C(byp) = 0.0047 µF C(byp) = 0.01 µF C(byp) = 0.1 µF Time, start-up (TPS79328) Output current limit Standby current High level enable input voltage Low level enable input voltage Input current (EN) RL = 14 , Co=1 µF, TJ = 25°C VO = 0 V, EN = 0 V, 2.7 V < VI < 5.5 V 2.7 V < VI < 5.5 V 2.7 V < VI < 5.5 V EN = 0 f = 100 Hz, TJ = 25°C, Power supply ripple rejection TPS79328 f = 100 Hz, TJ = 25°C, f = 10 kHz, TJ = 25°C, f = 100 kHz, TJ = 25°C, Dropout voltage (3) UVLO threshold UVLO hysteresis (1) (2) (3) SN0309050 IO = 200 mA, IO = 200 mA VCC rising TJ = 25°C VCC rising 2.25 100 IO = 10 mA IO = 200 mA IO = 200 mA IO = 200 mA TJ = 25°C -1 70 68 70 43 120 200 2.65 mV V mV dB 2 0.7 1 C(byp) = 0.001 µF C(byp) = 0.0047 µF C(byp) = 0.01 µF 285 0.07 55 36 33 32 50 70 100 600 1 mA µA V V µA µs µVRMS TJ = 25°C TJ = 25°C 5 0.05 0.12 3.85 V < VI < 5.5 V TJ = 25°C 2.793 170 220 2.8 V < VI < 5.5 V 1.764 2.85 2.907 TEST CONDITIONS MIN 2.7 0 -40 1.8 1.836 TYP MAX 5.5 200 125 UNIT V mA °C V V µA µA mV %/V
Minimum V(IN) is 2.7 V or V(OUT) + V(DO), whichever is greater. If VO 2.5 V then V(IN),min = 2.7 V, V(IN),max = 5.5 V. V(IN) = V(OUT), typ - 100 mV.
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