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Part: THS3110D

Category:
 Analog & Mixed-Signal Processing
   -> Amplifiers
     -> High Speed/Video Amplifiers
       -> Current Feedback

Description: ti THS3110, Single, Low Noise, High Voltage Current-feedback Amplifier With Power-down

Company: Texas Instruments, Inc.

Datasheet: Download THS3110D datasheet     File size : 726 kB

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Datasheet text preview:
THS3110, THS3111
www.ti.com
SLOS422A ­ SEPTEMBER 2003 ­ REVISED NOVEMBER 2003
LOW-NOISE, HIGH-VOLTAGE, CURRENT-FEEDBACK, OPERATIONAL AMPLIFIERS
FEATURES
· Low Noise ­ 2 pA/Hz Noninverting Current Noise ­ 10 pA/Hz Inverting Current Noise ­ 3 nV/Hz Voltage Noise High Output Current Drive: 260 mA High Slew Rate: 1300 V/µs (RL = 100 , VO = 8 VPP) Wide Bandwidth: 90 MHz (G = 2, RL = 100 ) Wide Supply Range: ±5 V to ±15 V Power-Down Feature: (THS3110 Only)
DESCRIPTION
The THS3110 and THS3111 are low-noise, high-voltage, current-feedback amplifiers designed to operate over a wide supply range of ±5 V to ±15 V for today's high performance applications. The THS3110 features a power-down pin (PD) that puts the amplifier in low power standby mode, and lowers the quiescent current from 4.8 mA to 270 µA. These amplifiers provide well-regulated ac performance characteristics. The unity gain bandwidth of 100 MHz allows for good distortion characteristics below 10 MHz. Coupled with high 1300-V/µs slew rate, the THS3110 and THS3111 amplifiers allow for high output voltage swings at high frequencies. The THS3110 and THS3111 are offered in a 8-pin SOIC (D), and the 8-pin MSOP (DGN) packages with PowerPADTM.
DIFFERENTIAL PHASE vs NUMBER OF LOADS
0.4 0.35 0.3 Differential Phase - 5 0.25 PAL 0.2 NTSC 0.15 0.1 0.05 Gain = 2, RF = 1 k, VS = ±15 V, 40 IRE - NTSC and PAL, Worst Case ±100 IRE Ramp
· · · · ·
APPLICATIONS
· · · · Video Distribution Power FET Driver Pin Driver Capacitive Load Driver
DIFFERENTIAL GAIN vs NUMBER OF LOADS
0.3 Gain = 2, RF = 1 k, VS = ±15 V, 40 IRE - NTSC and PAL, Worst Case ±100 IRE Ramp PAL 0.15 NTSC
VIDEO DISTRIBUTION AMPLIFIER APPLICATION 1 k 1 k 15 V VI 75 - + -15 V n Lines 75 75- Transmission Line 75 75 VO(n) VO(1)
0.25 Differential Gain - % 0.2
0.1 0.05
0 0 1 2 3 4 5 6 7 8 Number of 150 Loads
0 0 1 2 3 4 5 6 7 8 Number of 150 Loads
75
PowerPAD is a trademark of Texas Instruments. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 2002­2003, Texas Instruments Incorporated
THS3110, THS3111
SLOS422A ­ SEPTEMBER 2003 ­ REVISED NOVEMBER 2003 www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling procedures and installation procedures can cause damage.
TOP VIEW THS3110 REF VIN- VIN+ VS-
1 2 3 4 8 7 6 5
D, DGN
TOP VIEW THS3111
D, DGN
PD VS+ VOUT NC
NC VIN - VIN + VS-
1 2 3 4
8 7 6 5
NC VS+ VOUT NC
NC = No Internal Connection
NC = No Internal Connection
Note: The device with the power down option defaults to the ON state if no signal is applied to the PD pin. Additionallly, the REF pin functional range is from VS- to (VS+ - 4 V).
AVAILABLE OPTIONS
TA 0°C to 70°C -40°C to 85°C 0°C to 70°C -40°C to 85°C PACKAGED DEVICE PLASTIC SMALL OUTLINE SOIC (D) THS3110CD THS3110CDR THS3110ID THS3110IDR THS3111CD THS3111CDR THS3111ID THS3111IDR PLASTIC MSOP (DGN) (1) (2) THS3110CDGN THS3110CDGNR THS3110IDGN THS3110IDGNR THS3111CDGN THS3111CDGNR THS3111IDGN THS3111IDGNR SYMBOL BJB BIR BJA BIS
(1) (2)
Available in tape and reel. The R suffix standard quantity is 2500 (e.g. THS3110CDGNR). The PowerPAD is electrically isolated from all other pins.
DISSIPATION RATING TABLE
PACKAGE D-8 (1) DGN-8 (2) (1) (2) JC (°C/W) 38.3 4.7 JA (°C/W) 95 58.4 POWER RATING TJ = 125°C TA = 25°C 1.05 W 1.71 W TA = 85°C 421 mW 685 mW
This data was taken using the JEDEC standard low-K test PCB. For the JEDEC proposed high-K test PCB, the JA is 95°C/W with power rating at TA = 25°C of 1.05 W. This data was taken using 2 oz. trace and copper pad that is soldered directly to a 3 inch x 3 inch PCB. For further information, refer to the Application Informationsection of this data sheet.
2
THS3110, THS3111
www.ti.com SLOS422A ­ SEPTEMBER 2003 ­ REVISED NOVEMBER 2003
RECOMMENDED OPERATING CONDITIONS
MIN Supply voltage Operating free-air temperature, TA Dual supply Single supply Commercial Industrial ±5 10 0 -40 -40 -40 NOM MAX ±15 30 70 85 125 85 °C UNIT V
Operating junction temperature, continuous operating temperature, TJ Normal storage temperature, Tstg
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature (unless otherwise noted) (1)
UNIT Supply voltage, VS- to VS+ Input voltage, VI Differential input voltage, VID Output current, IO (2) Continuous power dissipation Maximum junction temperature, TJ (3) Maximum junction temperature, continuous operation, long term reliability, TJ Operating free-air temperature, TA Storage temperature, Tstg Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds ESD ratings: HBM CDM MM (1) (2) 900 1500 200
(4)
33 V ± VS ±4V 300 mA See Dissipation Ratings Table 150°C 125°C 0°C to 70°C -40°C to 85°C -65°C to 125°C 300°C Commercial Industrial
(3) (4)
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under,, recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The THS3110 and THS3111 may incorporate a PowerPADTM on the underside of the chip. This acts as a heatsink and must be connected to a thermally dissipating plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature which could permanently damage the device. See TI Technical Brief SLMA002 for more information about utilizing the PowerPADTM thermally enhanced package. The absolute maximum temperature under any condition is limited by the constraints of the silicon process. The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may result in reduced reliability and/or lifetime of the device.
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