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Part: TLC25L4ACN
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
-> Operational Amplifiers
Description: ti TLC25L4A, LinCMOS(TM) Quad Operational Amplifier
Company: Texas Instruments, Inc.
Datasheet: Download TLC25L4ACN datasheet File size : 619 kB
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Datasheet text preview:
TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B TLC25L4Y, TLC25M4, TLC25M4A, TLC25M4B, TLC25M4Y LinCMOS QUAD OPERATIONAL AMPLIFIERS
SLOS003G JUNE 1983 REVISED MARCH 2001
D D D D D D
A-Suffix Versions Offer 5-mV VIO B-Suffix Versions Offer 2-mV VIO Wide Range of Supply Voltages 1.4 V to 16 V True Single-Supply Operation Common-Mode Input Voltage Includes the Negative Rail Low Noise . . . 25 nV/Hz Typ at f = 1 kHz (High-Bias Version)
D, N, OR PW PACKAGE (TOP VIEW)
1OUT 1IN 1IN + VDD 2IN + 2IN 2OUT
1 2 3 4 5 6 7
14 13 12 11 10 9 8
4OUT 4IN 4IN + VDD /GND 3IN + 2IN 3OUT
description symbol (each amplifier) The TLC254, TLC254A, TLC254B, TLC25L4, TLC254L4A, TLC254L4B, TLC25M4, TLC25M4A + IN + and TL25M4B are low-cost, low-power quad OUT operational amplifiers designed to operate with IN single or dual supplies. These devices utilize the Texas Instruments silicon gate LinCMOS process, giving them stable input-offset voltages that are available in selected grades of 2, 5, or 10 mV maximum, very high input impedances, and extremely low input offset and bias currents. Because the input common-mode range extends to the negative rail and the power consumption is extremely low, this series is ideally suited for battery-powered or energy-conserving applications. The series offers operation down to a 1.4-V supply, is stable at unity gain, and has excellent noise characteristics.
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised in handling these devices as exposure to ESD may result in degradation of the device parametric performance. Because of the extremely high input impedance and low input bias and offset currents, applications for these devices include many areas that have previously been limited to BIFET and NFET product types. Any circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective use of these devices. Many features associated with bipolar technology are available with LinCMOS operational amplifiers without the power penalties of traditional bipolar devices.
Available options TA VIOmax AT 25°C 10 mV 5 mV 2 mV 0°C to 70°C 10 mV 5 mV 2 mV 10 mV 5 mV 2 mV PACKAGED DEVICES SMALL OUTLINE (D) TLC254CD TLC254ACD TLC254BCD TLC25L4CD TLC25L4ACD TLC25L2BCD TLC25M4CD TLC25M4ACD TLC25M4BCD PLASTIC DIP (N) TLC254CN TLC254ACN TLC254BCN TLC25L4CN TLC25L4ACN TLC25L4BCN TLC25M4CN TLC25M4ACN TLC25M4BCN TSSOP (PW) TLC254CPW -- -- TLC25L4CPW -- -- TLC25M4CPW -- -- CHIP FORM FORM (Y) TLC254Y -- -- TLC25L4Y -- -- TLC25M4Y -- --
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC254CDR). Chips are tested at 25°C.
LinCMOS is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright 2001, Texas Instruments Incorporated
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1
SLOS003G JUNE 1983 REVISED MARCH 2001
TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B TLC25L4Y, TLC25M4, TLC25M4A, TLC25M4B, TLC25M4Y LinCMOS QUAD OPERATIONAL AMPLIFIERS
description (continued)
General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are all easily designed with these devices. Remote and inaccessible equipment applications are possible using their low-voltage and low-power capabilities. These devices are well suited to solve the difficult problems associated with single-battery and solar-cell-powered applications. This series includes devices that are characterized for the commercial temperature range and are available in 14-pin plastic dip and the small-outline packages. The device is also available in chip form. These devices are characterized for operation from 0°C to 70°C.
DEVICE FEATURES PARAMETER Supply current (Typ) Slew rate (Typ) Input offset voltage (Max) TLC254C, TLC25L4C, TLC25M4C TLC254AC, TLC25L4AC, TLC25M4AC TLC254BC, TLC25L4BC, TLC25M4BC Offset voltage drift (Typ) Offset voltage temperature coefficient (Typ) Input bias current (Typ) TLC25L4_C (LOW BIAS) 40 µA 0.04 V/µA 10 mV 5 mV 2 mV 0.1 µV/month 0.7 µV/°C 1 pA TLC25M4_C (MEDIUM BIAS) 600 µA 0.6 V/µA 10 mV 5 mV 2 mV 0.1 µV/month 2 µV/°C 1 pA 1 pA TLC254_C (HIGH BIAS) 4000 µA 4.5 V/µA 10 mV 5 mV 2 mV 0.1 µV/month 5 µV/°C 1 pA 1 pA
Input offset current (Typ) 1 pA The long-term drift value applies after the first month.
equivalent schematic (each amplifier)
VDD
IN +
ESDProtective Network
IN
ESDProtective Network OUT
VDD /GND
2
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B TLC25L4Y, TLC25M4, TLC25M4A, TLC25M4B, TLC25M4Y LinCMOS QUAD OPERATIONAL AMPLIFIERS
SLOS003G JUNE 1983 REVISED MARCH 2001
chip information
These chips, when properly assembled, display characteristics similar to the TLC25_4C. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS VDD (4) + + + + (11) VDD /GND
(1) (2) (3) (4) (5) (6) (7)
(3) 1IN + 1IN
(14) (13) (12) (11) (10) (9) (8)
(1) 1OUT (5) (6) (8) 3OUT (12) (13) 4IN + 4IN 2IN + 2IN
(2) (7)
2OUT (10) 3IN + (9) 3IN 68 4OUT (14)
CHIP THICKNESS: 15 TYPICAL BONDING PADS: 4 × 4 MINIMUM TJmax = 150°C TOLERANCES ARE ± 10%. ALL DIMENSIONS ARE IN MILS. PIN (11) IS INTERNALLY CONNECTED TO BACKSIDE OF CHIP.
108
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· DALLAS, TEXAS 75265
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