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Details, datasheet, quote on part number:TLC272
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| Part: | TLC272 |
| Category: | Analog & Mixed-Signal Processing => Amplifiers => Operational Amplifiers => General Purpose => Dual |
| Description: | Lincmos(tm) Precision Dual op Amp: Quad |
| Company: | Texas Instruments, Inc. |
| Datasheet: | Download TLC272 datasheet File size : 590 kB |
| Request For quote: | Find where to buy TLC272
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Datasheet text preview:
TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091E OCTOBER 1987 REVISED FEBRUARY 2002
D Trimmed Offset Voltage: D D
D D D D D D
NC 1IN NC 1IN + NC
4 5 6 7 8
3 2 1 20 19 18 17 16 15 14 9 10 11 12 13
NC 1OUT NC VDD NC NC 2OUT NC 2IN NC
NC No internal connection
D D
TLC277 . . . 500 µV Max at 25°C, VDD = 5 V Input Offset Voltage Drift . . . Typically 0.1 µV/Month, Including the First 30 Days Wide Range of Supply Voltages Over Specified Temperature Range: 0°C to 70°C . . . 3 V to 16 V 40°C to 85°C . . . 4 V to 16 V 55°C to 125°C . . . 4 V to 16 V Single-Supply Operation Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix types) Low Noise . . . Typically 25 nV/Hz at f = 1 kHz Output Voltage Range Includes Negative Rail High Input impedance . . . 1012 Typ ESD-Protection Circuitry Small-Outline Package Option Also Available in Tape and Reel Designed-In Latch-Up Immunity
D, JG, P, OR PW PACKAGE (TOP VIEW)
1OUT 1IN 1IN + GND
1 2 3 4
8 7 6 5
VDD 2OUT 2IN 2IN +
FK PACKAGE (TOP VIEW)
description
The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.
Percentage of Units %
DISTRIBUTION OF TLC277 INPUT OFFSET VOLTAGE
30 473 Units Tested From 2 Wafer Lots VDD = 5 V TA = 25°C P Package
25
These devices use Texas Instruments silicongate LinCMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes. The extremely high input impedance, low bias currents, and high slew rates make these costeffective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 µV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.
LinCMOS is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
20
15
10
5
0 800
400 0 400 VIO Input Offset Voltage µV
NC GND NC 2IN + NC
800
Copyright 2002, Texas Instruments Incorporated
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
1
TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091E OCTOBER 1987 REVISED FEBRUARY 2002
description (continued)
AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax AT 25°C 500 µV 2 mV 5 mV 10mV 500 µV 2 mV 5 mV 10 mV SMALL OUTLINE (D) TLC277CD TLC272BCD TLC272ACD TLC272CD TLC277ID TLC272BID TLC272AID TLC272ID CHIP CARRIER (FK) -- -- -- -- -- -- -- -- CERAMIC DIP (JG) -- -- -- -- -- -- -- -- PLASTIC DIP (P) TLC277CP TLC272BCP TLC272ACP TLC272CP TLC277IP TLC272BIP TLC272AIP TLC272IP TSSOP (PW) -- -- -- TLC272CPW -- -- -- -- CHIP FORM (Y) -- -- -- TLC272Y -- -- -- --
0°C to 70°c to 70°c
to 85°C 40°C to 85°C
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC277CDR).
In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail. A wide range of packaging options is available, including small-outline and chip carrier versions for high-density system applications. The device inputs and outputs are designed to withstand 100-mA surge currents without sustaining latch-up. The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from 40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of 55°C to 125°C.
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POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
TLC272, TLC272A, TLC272B, TLC272Y, TLC277 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091E OCTOBER 1987 REVISED FEBRUARY 2002
equivalent schematic (each amplifier)
VDD P3 P4 R6
R1 IN P1 IN +
R2
N5 P5 P6
P2 R5 C1 OUT N3 N1 R3 N2 D1 R4 D2 N6 R7 N7
N4
GND
TLC272Y chip information
This chip, when properly assembled, displays characteristics similar to the TLC272C. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS VDD (8) + + 60 (4) GND CHIP THICKNESS: 15 TYPICAL BONDING PADS: 4 × 4 MINIMUM TJmax = 150°C TOLERANCES ARE ± 10%. ALL DIMENSIONS ARE IN MILS. 73 PIN (4) IS INTERNALLY CONNECTED TO BACKSIDE OF CHIP. (5) (6) 2IN + 2IN (1) 1OUT
1IN + 1IN 2OUT
(3) (2) (7)
POST OFFICE BOX 655303
· DALLAS, TEXAS 75265
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