500 µV Max at 25°C, VDD 5 V Input Offset Voltage Drift. Typically 0.1 µV/Month, Including the First 30 Days Wide Range of Supply Voltages Over Specified Temperature Range: 16 V Single-Supply Operation Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix types) Low Noise. Typically 25 nV/Hz = 1 kHz Output Voltage Range Includes Negative Rail High Input impedance. 1012 Typ ESD-Protection Circuitry Small-Outline Package Option Also Available in Tape and Reel Designed-In Latch-Up Immunity
description
The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.
30 473 Units Tested From 2 Wafer Lots VDD 25°C P Package
These devices use Texas Instruments silicongate LinCMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes. The extremely high input impedance, low bias currents, and high slew rates make these costeffective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 µV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
AVAILABLE OPTIONS PACKAGED DEVICES TA VIOmax 10 mV SMALL OUTLINE (D) TLC272AID TLC272ID CHIP CARRIER (FK) CERAMIC DIP (JG) PLASTIC DIP (P) TLC272AIP TLC272IP TSSOP (PW) TLC272CPW CHIP FORM (Y) TLC272Y
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC277CDR).
In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail. A wide range of packaging options is available, including small-outline and chip carrier versions for high-density system applications. The device inputs and outputs are designed to withstand 100-mA surge currents without sustaining latch-up. The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance. The C-suffix devices are characterized for operation from to 70°C. The I-suffix devices are characterized for operation from to 85°C. The M-suffix devices are characterized for operation over the full military temperature range to 125°C.
This chip, when properly assembled, displays characteristics similar to the TLC272C. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS VDD GND CHIP THICKNESS: 15 TYPICAL BONDING PADS: × 4 MINIMUM TJmax = 150°C TOLERANCES ARE ± 10%. ALL DIMENSIONS ARE IN MILS. 73 PIN (4) IS INTERNALLY CONNECTED TO BACKSIDE OF CHIP. (1) 1OUT
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