Details, datasheet, quote on part number: TLE2161
CategorySemiconductors => Amplifiers => Operational Amplifiers (Op Amps) => Precision Op Amps
Part familyTLE2161 JFET-Input High-Output-Drive Low-Power Decompensated Operational Amplifier
DescriptionJFET-Input High-Output-Drive Low-Power Decompensated Operational Amplifier 8-SOIC 0 to 70
CompanyTexas Instruments, Inc.
DatasheetDownload TLE2161 datasheet
Cross ref.Similar parts: CA3100E, CA3100T, JM38510/10101BPX, JM38510/10104BGA, JM38510/10104BGC, JM38510/10104SGA, JM38510/11401BGA, JM38510/11401BGC, JM38510/11401SGA, JM38510/11403BGA
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Operating Temperature Range(C)0 to 70
Approx. Price (US$)0.74 | 1ku
Output Current(Typ)(mA)50
Iq per channel(Typ)(mA)0.29
Vn at 1kHz(Typ)(nV/rtHz)40
Vos (Offset Voltage @ 25C)(Max)(mV)3
Package GroupSOIC
Iq per channel(Max)(mA)0.35
Input Bias Current(Max)(pA)60
Slew Rate(Typ)(V/us)10
Number of Channels(#)1
Offset Drift(Typ)(uV/C)6
Total Supply Voltage(Min)(+5V=5, +/-5V=10)7
Total Supply Voltage(Max)(+5V=5, +/-5V=10)36
Rail-to-RailIn to V+
  Mecanical Data
Pin nbPackage typeInd stdJEDEC codePackage qtyCarrierDevice markWidth (mm)Length (mm)Thick (mm)Pitch (mm)
8DSOICR-PDSO-G75TUBE2161C 3.914.91.581.27
Application notes
• TLE2161 EMI Immunity Performance | Doc
Spice Model
TLE2161, TLE2161A, TLE2161B PSpice Model - ZIP (01/10/2002)


Features, Applications

Excellent Output Drive Capability 2.5 V Min 100 , VCC 12.5 V Min 600 , VCC 15 V Low Supply Current. 280 A Typ Decompensated for High Slew Rate and Gain-Bandwidth Product AVD = 0.5 Min Slew Rate = 10 V/s Typ Gain-Bandwidth Product = 6.5 MHz Typ

Wide Operating Supply Voltage Range VCC 18 V High Open-Loop Gain. 280 V/mV Typ Low Offset Voltage. 500 V Max Low Offset Voltage Drift With Time 0.04 V/Month Typ Low Input Bias Current. 5 pA Typ


The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product. In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.



The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.


A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications. The C-suffix devices are characterized for operation from to 70C. The I-suffix devices are characterized for operation from to 85C. The M-suffix devices are characterized for operation over the full military temperature range to 125C.

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

Supply voltage, VCC + (see Note 19 V Supply voltage, VCC 19 V Differential input voltage, VID (see Note 38 V Input voltage range, VI (any input). VCC Input current, II (each input). 1 mA Output current, IO. 80 mA Total current into VCC 80 mA Total current out of VCC 80 mA Duration of short-circuit current at (or below) 25C (see Note 3). unlimited Continuous total power dissipation. See Dissipation Rating Table Operating free-air temperature range, TA: C suffix. 70C I suffix. 85C M suffix. to 125C Storage temperature range, Tstg. to 150C Case temperature for 60 seconds: FK package. 260C Lead temperature mm (1/16 inch) from case for 10 seconds: or P package. 260C Lead temperature mm (1/16 inch) from case for 60seconds: JG package. 300C

Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VCC and VCC 2. Differential voltages are at IN+ with respect IN 3. The output may be shorted to either supply. Temperature and /or supply voltages must be limited to ensure that the maximum dissipation rating is not exceeded. DISSIPATION RATING TABLE PACKAGE TA 25C POWER RATING 1000 mW DERATING FACTOR ABOVE 25C 5.8 mW/C 11.0 mW/C 8.4 mW/C 8.0 mW/C = 70C POWER RATING = 85C POWER RATING = 125C POWER RATING 200 mW


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