|
|
Part: TM497GU8-70
Category:
Memory
-> DRAM
-> SDR SDRAM
-> Modules
Description: ti TM497GU8, 4 194 304-Word BY 8-Bit Dynamic RAM Module
Company: Texas Instruments, Inc.
Datasheet: Download TM497GU8-70 datasheet File size : 199 kB
Request For quote: Find where to buy TM497GU8-70
Datasheet text preview:
TM497GU8 4 194 304-WORD BY 8-BIT DYNAMIC RAM MODULE
SMMS498A APRIL 1994 REVISED JUNE 1995
D D D D D D D D
Organization . . . 4 194 304 × 8 Single 5-V Power Supply (±10% Tolerance) 30-Pin Single-In-Line Memory Module (SIMM) for Use With Sockets Utilizes Two 16-Megabit Dynamic RAMs in Plastic Small-Outline J-Lead (SOJ) Packages Long Refresh Period 32 ms (2048 Cycles) All Inputs, Outputs, Clocks Fully TTL Compatible 3-State Output Performance Ranges:
ACCESS TIME tRAC (MAX) '497GU8-60 60 ns '497GU8-70 70 ns '497GU8-80 80 ns ACCESS ACCESS READ OR TIME TIME WRITE tA A tCAC CYCLE (MAX) (MAX) (MIN) 30 ns 15 ns 110 ns 35 ns 18 ns 130 ns 40 ns 20 ns 150 ns
U SINGLE-IN-LINE PACKAGE ( TOP VIEW )
D D D D
Common CAS Control for Eight Common Data-In and Data-Out Lines Low Power Dissipation Operating Free-Air Temperature Range 0°C to 70°C Enhanced Page-Mode Operation With CAS-Before-RAS ( CBR ), RAS-Only, and Hidden Refresh
VCC CAS DQ1 A0 A1 DQ2 A2 A3 VSS DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 A9 A10 DQ6 W VSS DQ7 NC DQ8 NC RAS NC NC VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
description
The TM497GU8 is a 4M-byte dynamic random-access memory module organized as 4 194 304 × 8 bits in a 30-pin leadless single-in-line memory module (SIMM). The SIMM is composed of two TMS417400DJ, 4 194 304 × 4-bit dynamic RAMs in 24/26-lead plastic small-outline J-lead (SOJ) packages mounted on a substrate with decoupling capacitors. The TM497GU8 is available in the U single-sided, leadless module for use with sockets and is characterized for operation from 0°C to 70°C.
PIN NOMENCLATURE A0 A10 CAS DQ1 DQ8 NC RAS VCC VSS W Address Inputs Column-Address Strobe Data In / Data Out No Internal Connection Row-Address Strobe 5-V Supply Ground Write Enable
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 1995, Texas Instruments Incorporated
POST OFFICE BOX 1443
· HOUSTON, TEXAS 772511443
1
TM497GU8 4 194 304-WORD BY 8-BIT DYNAMIC RAM MODULE
SMMS498A APRIL 1994 REVISED JUNE 1995
operation
The TM497GU8 operates as two TMS417400DJs connected as shown in the functional block diagram. Refer to the TMS417400 data sheet for details of its operation. The common I/O feature of the TM497GU8 dictates the use of early-write cycles to prevent contention on D and Q. power up To achieve proper operation, an initial pause of 200 µs followed by a minimum of eight initialization cycles is required after full VCC level is achieved. These eight initialization cycles need to include at least one refresh (RAS-only orCBR) cycle.
single-in-line memory module and components
PC substrate: 1,27 mm (0.05 inch) nominal thickness; 0.005 inch/inch maximum warpage Bypass capacitors: Multilayer ceramic Contact area for socketable devices: Nickel plate and solder plate over copper
functional block diagram
A0 A10 RAS CAS W 11 4M × 4 A0 A10 DQ1 RAS DQ2 DQ3 CAS DQ4 W OE DQ1 DQ2 DQ3 DQ4
11
4M × 4 A0 A10 DQ1 RAS DQ2 DQ3 CAS W DQ4 OE
DQ5 DQ6 DQ7 DQ8
2
POST OFFICE BOX 1443
· HOUSTON, TEXAS 772511443
TM497GU8 4 194 304-WORD BY 8-BIT DYNAMIC RAM MODULE
SMMS498A APRIL 1994 REVISED JUNE 1995
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V Voltage range on any pin (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 V to 7 V Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 W Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C to 125°C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltage values are with respect to VSS.
recommended operating conditions
MIN VCC VIH VIL TA Supply voltage High-level input voltage Low-level input voltage (see Note 2) Operating free-air temperature 4.5 2.4 1 0 NOM 5 MAX 5.5 6.5 0.8 70 UNIT V V V °C
NOTE 2: The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used for logic-voltage levels only.
electrical characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER VOH VOL II IO ICC1 High-level output voltage Low-level output voltage Input current (leakage) Output current (leakage) Read- or write-cycle current (see Note 3) TEST CONDITIONS CONDITIONS IOH = 5 mA IOL = 4.2 mA VCC = 5 V, VI = 0 V to 6.5 V, All other pins = 0 V to VCC VCC = 5.5 V, CAS high VCC = 5.5 V, VO = 0 V to VCC, Minimum cycle '497GU8 - 60 MIN 2.4 0.4 ±10 ±10 220 MAX '497GU8 - 70 MIN 2.4 0.4 ±10 ±10 200 MAX '497GU8 - 80 MIN 2.4 0.4 ±10 ±10 180 MAX UNIT V V µA µA mA
ICC2
Standby current current
VIH = 2.4 V (TTL), After 1 memory cycle, RAS and CAS high VIH = VCC 0.2 V (CMOS), After 1 memory cycle, RAS and CAS high VCC = 5.5 V, RAS cycling, VCC = 5.5 V, RAS low, Minimum cycle, CAS high tPC = MIN, CAS cycling
4
4
4
mA
2
2
2
mA
ICC3 ICC4
Average refresh current (RASonly or CBR) (see Note 3) Average page current (see Note 4)
220 140
200 120
180 100
mA mA
NOTES: 3. Measured with a maximum of one address change while RAS = VIL 4. Measured with a maximum of one address change while CAS = VIH
POST OFFICE BOX 1443
· HOUSTON, TEXAS 772511443
3
Others parts begin by tm
TM-1 TM-2 TM-3 TM-4 TM-5 TM-6 TM-7 TM-8 TM-9 TM-10 TM-11 TM-12 TM-13 TM-14 TM-15 TM-16 TM-17 TM-18 TM-19 TM-20 TM-21 TM-22 TM-23 TM-24 TM-25 TM-26 TM-27 TM-28 TM-29 TM-30
|
|
|
