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Part: TMS28F020-17C5

Category:
 Memory
   -> ROM
     -> EEPROM
       -> Parallel
             -> 2 Mb

Description: 262 144 BY 8-bit Flash Memory

Company: Texas Instruments, Inc.

Datasheet: Download TMS28F020-17C5 datasheet     File size : 612 kB

Request For quote: Find where to buy TMS28F020-17C5



Datasheet text preview:
TMS28F020 262 144 BY 8-BIT FLASH MEMORY
SMJS020C ­ OCTOBER 1994 ­ REVISED JANUARY 1998
D D D
A 12 A 15 A 16 VPP VCC W A 17
4 3 2 1 32 31 30 29 28 27 26 25 24 23 22 21 14 15 16 17 18 19 20
D D
D D D D
D
Organization . . . 262 144 by 8-Bits Pin Compatible With Existing 2-Megabit EPROMs VCC Tolerance ±10% All Inputs/Outputs TTL Compatible Maximum Access/Minimum Cycle Time '28F020-10 100 ns '28F020-12 120 ns '28F020-15 150 ns '28F020-17 170 ns Industry-Standard Programming Algorithm 100 000 and 10 000 Program / Erase-Cycle Versions Available Latchup Immunity of 250 mA on All Input and Output Lines Low Power Dissipation (VCC = 5.5 V) ­ Active Write . . . 55 mW ­ Active Read . . . 165 mW ­ Electrical Erase . . . 82.5 mW ­ Standby . . . 0.55 mW (CMOS-Input Levels) Automotive Temperature Range ­ 40°C to 125°C
FM PACKAGE ( TOP VIEW )
A7 A6 A5 A4 A3 A2 A1 A0 DQ0
5 6 7 8 9 10 11 12 13
A14 A13 A8 A9 A11 G A10 E DQ7
PIN NOMENCLATURE A0 ­ A17 DQ0 ­ DQ7 E G VCC VPP VSS W Address Inputs Inputs (programming) / Outputs Chip Enable Output Enable 5-V Power Supply 12-V Power Supply Ground Write Enable
description
The TMS28F020 flash memory is a 262 144 by 8-bit (2 097 152-bit), programmable read-only memory that can be electrically bulk-erased and reprogrammed. It is available in 100 000 and 10 000 program/erase-endurance-cycle versions. The TMS28F020 is offered in a 32-lead plastic leaded chip-carrier package using 1,25-mm (50-mil) lead spacing (FM suffix) and a 32-lead thin small-outline package (DD suffix).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright © 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
POST OFFICE BOX 1443
· HOUSTON, TEXAS 77251­1443
DQ1 DQ2 VSS DQ3 DQ4 DQ5 DQ6
1
TMS28F020 262 144 BY 8-BIT FLASH MEMORY
SMJS020C ­ OCTOBER 1994 ­ REVISED JANUARY 1998
DD PACKAGE ( TOP VIEW )
A11 A9 A8 A13 A14 A17 W VC C VPP A16 A15 A12 A7 A6 A5 A4
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
G A10 E DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3
device symbol nomenclature
TMS28F020 -12 C5 FM L
Temperature Range Designator L = 0°C to 70°C E = ­ 40°C to 85°C Q = ­ 40°C to 125°C Package Designator FM = Plastic Leaded Chip-Carrier DD = Thin Small-Outline Package Program/Erase Endurance C5 = 100 000 Cycles C4 = 10 000 Cycles Speed Designator -10 = 100 ns -12 = 120 ns -15 = 150 ns -17 = 170 ns
2
POST OFFICE BOX 1443
· HOUSTON, TEXAS 77251­1443
TMS28F020 262 144 BY 8-BIT FLASH MEMORY
SMJS020C ­ OCTOBER 1994 ­ REVISED JANUARY 1998
logic symbol
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 E G W 12 11 10 9 8 7 6 5 27 26 23 25 4 28 29 3 2 30 22 24 31 0 FLASH MEMORY 262 144 × 8
A
0 262 143
17 G1 [PWR DWN] G2 1, 2 EN (READ) 1C3 (WRITE) A, 3D 4
DQ0
13
A, Z4
DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7
14 15 17 18 19 20 21
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. Pin numbers shown are for the FM package.
POST OFFICE BOX 1443
· HOUSTON, TEXAS 77251­1443
3


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