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Part: TMS426160P-70
Category:
Memory
-> DRAM
Description: ti TMS426160, 1 048 576-Word BY 16-Bit High-speed Low Voltage Dynamic Random-access Memories
Company: Texas Instruments, Inc.
Datasheet: Download TMS426160P-70 datasheet File size : 1495 kB
Request For quote: Find where to buy TMS426160P-70
Datasheet text preview:
TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DRAMS
SMKS160C MAY 1995 REVISED NOVEMBER 1995
D D D
Organization . . . 1 048 576 × 16 Single Power Supply (5 V or 3.3 V) Performance Ranges:
ACCESS ACCESS ACCESS TIME TIME TIME tR A C tC A C tA A MAX MAX MAX '4xx160/P-60 60 ns 15 ns 30 ns '4xx160/P-70 70 ns 18 ns 35 ns '4xx160/P-80 80 ns 20 ns 40 ns READ OR WRITE CYCLE MIN 110 ns 130 ns 150 ns
DGE PACKAGE ( TOP VIEW )
DZ PACKAGE ( TOP VIEW )
D D D D D D D
Enhanced Page-Mode Operation With CAS-Before-RAS ( CBR ) Refresh Long Refresh Period and Self-Refresh Option ( TMS4xx160P) 3-State Unlatched Output Low Power Dissipation High-Reliability Plastic 42-Lead (DZ Suffix) 400-Mil-Wide Surface-Mount (SOJ) Package and 44/50-Lead (DGE Suffix) Surface-Mount Thin Small-Outline Package ( TSOP) Operating Free-Air Temperature Range 0°C to 70°C Fabricated Using the Texas Instruments Enhanced Performance Implanted CMOS (EPICTM) Technology
AVAILABLE OPTIONS POWER SUPPLY 5V 5V 5V 5V 3.3 V 3.3 V 3.3 V 3.3 V SELF REFRESH, BATTERY BACKUP -- Yes -- Yes -- Yes -- Yes REFRESH CYCLES 4096 in 64 ms 4096 in 128 ms 1024 in 16 ms 1024 in 128 ms 4096 in 64 ms 4096 in 128 ms 1024 in 16 ms 1024 in 128 ms
VC C DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NC
1 2 3 4 5 6 7 8 9 10 11
50 49 48 47 46 45 44 43 42 41 40
VSS DQ15 DQ14 DQ13 DQ12 VSS DQ11 DQ10 DQ9 DQ8 NC
DEVICE
NC NC W RAS A11 A10 A0 A1 A2 A3 VCC
15 16 17 18 19 20 21 22 23 24 25
36 35 34 33 32 31 30 29 28 27 26
NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS
VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NC NC W RAS A11 A10 A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22
VSS DQ15 DQ14 DQ13 DQ12 VSS DQ11 DQ10 DQ9 DQ8 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 VSS
TMS416160 TMS416160P TMS418160 TMS418160P TMS426160 TMS426160P TMS428160 TMS428160P
A10 and A11 are NC for TMS4x8160 and TMS4x8160P.
PIN NOMENCLATURE A0 A11 DQ0 DQ15 LCAS UCAS NC OE RAS VCC VSS W Address Inputs Data In / Data Out Lower Column-Address Strobe Upper Column-Address Strobe No Internal Connection Output Enable Row-Address Strobe 5-V or 3.3-V Supply Ground Write Enable
description
The TMS4xx160 series is a set of high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 1 048 576 words of 16 See Available Options Table. bits each. The TMS4xx160P series is a similar set of high-speed, low-power, self-refresh, 16 777 216-bit DRAMs organized as 1 048 576 words of 16 bits each. Both sets employ state-of-the-art enhanced performance implanted CMOS (EPICTM) technology for high performance, reliability, and low power at low cost.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. EPIC is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 1995, Texas Instruments Incorporated
POST OFFICE BOX 1443
· HOUSTON, TEXAS 772511443
1
TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DRAMS
SMKS160C MAY 1995 REVISED NOVEMBER 1995
description (continued)
These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS4xx160 and TMS4xx160P are offered in a 44/50-lead plastic surface-mount TSOP (DGE suffix) and a 42-lead plastic surface-mount SOJ (DZ suffix) package. These packages are characterized for operation from 0°C to 70°C.
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POST OFFICE BOX 1443
· HOUSTON, TEXAS 772511443
TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DRAMS
SMKS160C MAY 1995 REVISED NOVEMBER 1995
logic symbol
RAM 1M × 16 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 17 18 19 20 23 24 25 26 27 28 16 15 20D8/21D0
A 20D15/21D7 20D16 20D17 20D18 20D19
0 1 048 575
C20[ROW] G23/[REFRESH ROW] RAS 14 24[PWR DWN] C21 G24 & 31 C21 G34 UCAS 30 31 Z31 24,25EN27 W 13 OE 29 DQ0 2 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 3 4 5 7 8 9 10 33 23,21D 25 A,22D 26,27 A, Z26 34,25EN37 & 23C32 23C22
LCAS
31
34 DQ9 35 DQ10 DQ11 36 38 DQ12 39 DQ13 40 DQ14 41 DQ15
A,32D 36,37
A, Z36
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12. The pin numbers shown correspond to the DZ package. A10 and A11 are NC for TMS4x8160 and TMS4x8160P.
POST OFFICE BOX 1443
· HOUSTON, TEXAS 772511443
3
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