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Details, datasheet, quote on part number:TPS2350D
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Datasheet text preview:
TPS2350
SLUS574A - JULY 2003 - REVISED SEPTEMBER 2003
HOT SWAP POWER MANAGER FOR REDUNDANT -48 V SUPPLIES
FEATURES D Replaces OR-ing Diodes D Operating Supply Range of -12 V to -80 V D Withstands Transients to 100 V D Programmable Current Limit D Programmable Linear Inrush Slew Rate D Programmable UV/OV Thresholds D Programmable UV and OV Hysteresis D Fault Timer to Eliminate Nuisance Trips D Power Good and Fault Outputs D 14-Pin SOIC and TSSOP Package APPLICATIONS D -48-V Distributed Power Systems D Central Office Switching D ONET D Base Stations TYPICAL APPLICATION DIAGRAM DESCRIPTION
The TPS2350 is a hot swap power manager optimized for replacing OR-ing diodes in redundant power -48-V systems. The TPS2350 operates with supply voltages from -12 V to -80 V, and withstands spikes to -100 V. The TPS2350 uses two power FETs as low voltage drop diodes to efficiently select between two redundant power supplies. This minimizes system power dissipation and also minimizes voltage drop through the power management chain. The TPS2350 also uses a third power FET to provide load current slew rate control and peak current limiting that is programmed by one resistor and one capacitor. The device also provides a power good output to enable down-stream power converters and a fault output to indicate load problems.
R LOAD 1 3 Power Good Fault 12 2 UV PG FLT SOURCE 4 GATA OV GATB FLTTIM 5 RAMP 6 -VINA -VINB 14 13 -VINB CFLT CRAMP -VINA
UDG-03125
C LOAD GAT 11 Q1 RSENSE 0.01
RTN
TPS2350
SENSE 10 7 9 8
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright 2003, Texas Instruments Incorporated
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TPS2350
SLUS574A - JULY 2003 - REVISED SEPTEMBER 2003
ABSOLUTE MAXIMUM RATINGS over operating free-air temperature (unless otherwise noted)(1)
PARAMETER Input voltage range, RTN (2) Input voltage range, -VINA to VINB Input voltage range, FLTTIM, RAMP, SENSE, OV, UV (2) Output voltage range, FLT, PG (2)(3) Continuous output current, FLT, PG Continuous total power dissipation Operating junction temperature range, TJ Storage temperature range, Tstg TPS2350 -0.3 to 100 -100 to 100 -0.3 to 15 -0.3 to 100 10 TBD -55 to 125 -65 to 150 °C mA V UNIT
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds 260 (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) All voltages are with respect to the more negative of VINA and -VINB (unless otherwise noted). (3) With 10 k minimum series resistance. Range limited to 0.3V to 80V from low impedance source.
SOIC/TSSOP-14 PACKAGE (TOP VIEW) RTN FLT UV OV FLTTIM RAMP SOURCE
1 2 3 4 5 6 7 14 13 12 11 10 9 8
-VINA -VINB PG GAT SENSE GATA GATB
ELECTROSTATIC DISCHARGE (ESD) PROTECTION
MIN Human body model (HBM) Charged device model (CDM) 2 1.5 UNIT kV
AVAILABLE OPTIONS
TA - 40°C to 85°C (4) PACKAGE SOIC-14(4) TSSOP-14(4) PART NUMBER TPS2350D TPS2350PW
The D and PW packages are also available taped and reeled. Add an R suffix to the device type (i.e. TPS2350DR).
RECOMMENDED OPERATING CONDITIONS
MIN Input supply, -VINA, -VINB to RTN Operating junction temperature range -80 -40 NOM -48 MAX -12 85 UNIT V _C
DISSIPATION RATING TABLE
PACKAGE SOIC-14 TSSOP-14 TA < 25 _C POWER RATING 750 mW 750 mW DERATING FACTOR ABOVE TA = 25 _C 7.5 mW/C 7.5 mW/C TA = 85 _C POWER RATING 300 mW 300 mW
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TPS2350
SLUS574A - JULY 2003 - REVISED SEPTEMBER 2003
ELECTRICAL CHARACTERISTICS
-VINA = -48 V, -VINB = 0 V, UV = 2.5 V, OV = 0.5 V, SENSE = 0 V, RAMP = 0 V, SOURCE = more negative of VINA and VINB, all outputs unloaded, TA = -40 _C to 85 _C (unless otherwise noted)
Input Supply
PARAMETER ICC1A ICC2A ICC1B ICC2B VUVLO_I VHYST Supply current Supply current Supply current Supply current Internal UVLO threshold voltage Internal UVLO hysteresis voltage TEST CONDITIONS -VINA = -48 V, -VINB = 0 V -VINA = -80 V, -VINB = 0 V -VINB = -48 V, -VINA = 0 V -VINB = -80 V, -VINA = 0 V To GAT pull up -11.8 50 -10 240 1000 MIN TYP 1000 MAX 1500 2000 1500 2000 -8.0 500 V mV µA UNIT
Overvoltage and Undervoltage Inputs (OV and UV)
PARAMETER TEST CONDITIONS To GAT pull up, 25 _C VTHUV IHYSUV IILUV VTHOV IHYSOV IILOV UV threshold voltage, UV rising, to VINA UV hysteresis UV low-level input current OV threshold voltage, OV rising, to -VINA OV hysteresis OV low-level input current To GAT pull up, 0 to 70 _C To GAT pull up, -40 to 85 _C UV = -45.5 V UV = -47 V To GAT pull up OV = -45.5 V OV = -47 V MIN 1.391 1.387 1.384 -11 -1 1.376 -11.1 -1 1.400 -10 TYP 1.400 1.400 1.400 -10 MAX 1.409 1.413 1.419 -9 1 1.426 -8.6 1 µA V µA V UNIT
Linear Curent Amplifier (LCA)
PARAMETER VOH ISINK_f ISINK_l IIN High level output, GAT-SOURCE GAT sink current in fault GAT sink current in linear mode SENSE input current TEST CONDITIONS SENSE = SOURCE SENSE SOURCE = 80 mV, GAT = -43 V, FLTTIME = 5 V SENSE SOURCE = 80 mV, GAT = -43 V, FLTTIME = 2 V 0.0 V < SENSE SOURCE < 0.2 V RAMP SOURCE = 6 V RAMP SOURCE = 0 V -1 34 -7 42 MIN 11 30 TYP 14 75 mA 5 10 1 50 9 µA mV MAX 17 UNIT V
Reference clamp voltage, SENSE - VREF_K SOURCE VIO Input offset voltage, SENSE - SOURCE
Ramp Generator
PARAMETER ISRC1 ISRC2 RAMP source current, slow turn-on rate RAMP source current, normal rate TEST CONDITIONS RAMP - SOURCE = 0.25 V RAMP - SOURCE = 1 V and 3 V MIN -800 -11.3 9.5 TYP -550 -10 10 MAX -300 -8.5 5 10.7 UNIT nA µA mV mV/V
VOL Low-level output voltage UV = SOURCE AV Voltage gain, relative to SENSE 0 V < RAMP - SOURCE < 5 V All voltages are with respect to RTN unless otherwise stated. Currents are positive into and negative out of the specified terminal.
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