Details, datasheet, quote on part number: UCC37325DGNG4
PartUCC37325DGNG4
CategoryPower Management => Power Distribution/Switches => MOSFET Drivers
TitleMOSFET and Power Drivers
Descriptionti UCC37325, Dual 4 a Peak High Speed Low-side Power MOSFET Drivers
CompanyTexas Instruments, Inc.
DatasheetDownload UCC37325DGNG4 datasheet
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Features, Applications

DUAL 4A PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS
FEATURES D Industry-Standard Pin-Out D High Current Drive Capability A at the

Miller Plateau Region Efficient Constant Current Sourcing Using a Unique BiPolar & CMOS Output Stage TTL/CMOS Compatible Inputs Independent of Supply Voltage 20-ns Typical Rise and 15-ns Typical Fall Times with 1.8-nF Load Typical Propagation Delay Times 25 ns with Input Falling and 35 ns with Input Rising to 15-V Supply Voltage Supply Current 0.3 mA Dual Outputs Can Be Paralleled for Higher Drive Current Available in Thermally Enhanced MSOP PowerPADTM Package with 4.7C/W jc Rated From to 85C

APPLICATIONS D Switch Mode Power Supplies D DC/DC Converters D Motor Controllers D Line Drivers DESCRIPTION

The UCC37323/4/5 family of high-speed dual MOSFET drivers can deliver large peak currents into capacitive loads.Three standard logic options are offered dual-inverting, dual-noninverting and one-inverting and one-noninverting driver. The thermally enhanced 8-pin PowerPADTM MSOP package (DGN) drastically lowers the thermal resistance to improve long-term reliability. It is also offered in the standard SOIC-8 (D) or PDIP-8 (P) packages. Using a design that inherently minimizes shoot-through current, these drivers deliver 4-A of current where it is needed most at the Miller plateau region during the MOSFET switching transition. A unique BiPolar and MOSFET hybrid output stage in parallel also allows efficient current sourcing and sinking at low supply voltages.

PowerPADt is a trademark of Texas Instruments Incorporated. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

OUTPUT CONFIGURATION TEMPERATURE RANGE to +85C PACKAGED DEVICES SOIC-8 (D) UCC27325D MSOP-8 PowerPAD (DGN)} UCC27325DGN PDIP-8 (P) UCC37324P UCC27325P

Dual inverting D al nonIn Dual nonInverting erting One inverting, one noninverting

D (SOIC8) and DGN (PowerPADMSOP) packages are available taped and reeled. Add R suffix to device type (e.g. UCC27324DGNR) to order quantities of 2,500 devices per reel for or 1,000 devices per reel for DGN package. The PowerPAD is not directly connected to any leads of the package. However, it is electrically and thermally connected to the substrate which is the ground of the device. D, DGN, OR P PACKAGE (TOP VIEW)

PACKAGE SOIC-8 PDIP-8 MSOP PowerPAD-8 See Note 3 SUFFIX D P DGN jc (C/W) 4.7 ja (C/W) Power Rating (mW) = 70C See Note 1 344655 See Note 500 1370 Derating Factor Above 70C (mW/ C) See Note See Note 9 17.1

Notes: 1. 125C operating junction temperature is used for power rating calculations 2. The range of values indicates the effect of pcboard. These values are intended to give the system designer an indication of the best and worst case conditions. In general, the system designer should attempt to use larger traces on the pcboard where possible in order to spread the heat away form the device more effectively. For information on the PowerPADt package, refer to Technical Brief, PowerPad Thermally Enhanced Package, Texas Instrument s Literature No. SLMA002 and Application Brief, PowerPad Made Easy, Texas Instruments Literature No. SLMA004. 3. The PowerPAD is not directly connected to any leads of the package. However, it is electrically and thermally connected to the substrate which is the ground of the device.

INPUTS (VIN_L, VIN_H) INA INB UCC37323 OUTA OUTB UCC37324 OUTA OUTB UCC37325 OUTA OUTB
absolute maximum ratings over operating free-air temperature (unless otherwise noted)

Supply voltage, VDD. 16 V Output current (OUTA, OUTB) DC, IOUT_DC. 0.3 A Pulsed, (0.5 s), IOUT_PULSED. 4.5 A. Power dissipation = 25C (DGN package). W (D package). mW (P package). 350 mW Junction operating temperature, TJ. to 150C Storage temperature, Tstg. to 150C Lead temperature (soldering, 10 sec.),. 300C

Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal.

electrical characteristics, VDD TA = TJ, (unless otherwise noted) input (INA, INB)

PARAMETER VIN_H, logic 1 input threshold VIN_L, logic 0 input threshold Input current 0 V VIN VDD 10 0 TEST CONDITION MIN 1 10 TYP MAX UNITS V A

PARAMETER Output current VOH, high-level output voltage VOL, low-level output level Output resistance high TEST CONDITION VDD 14 V, See Note 1, VOH = VDD VOUT, IOUT = 25C, See Note TA = full range, See Note 3 Output resistance low = 25C, See Note TA = full range See Note 3 Latch-up protection See Note 1 IOUT = 10 mA, IOUT = 10 mA, IOUT = 10 mA, IOUT = 10 mA, VDD 14 V, VDD 14 V, VDD 14 V, VDD 14 V, See Note 2 IOUT 10 mA MIN TYP MAX UNITS mV mA

NOTES: 1. Ensured by design. Not tested in production. 2. The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The pulsed output current rating is the combined current from the bipolar and MOSFET transistors. 3. The pullup / pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the RDS(ON) of the MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor.


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