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Details, datasheet, quote on part number:XP131A0526SR
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Datasheet text preview:
NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.026 (max) NUltra High-Speed Switching NSOP-8 Package
GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
The XP131A0526SR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
Low on-state resistance : Rds(on)=0.017 (Vgs=10V) : Rds(on)=0.026 (Vgs=4.5V) Ultra high-speed switching Operational Voltage : 4.5V High density mounting : SOP-8
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Ta=25°C PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 30 ±20 10 30 10 2.5 150 -55~150 UNITS V V A A A W °C °C
Note: When implemented on a glass epoxy PCB
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DC Characteristics
PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage
Note: Effective during pulse test.
Ta=25°C SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=30V, Vgs=0V Vgs=±20V, Vds=0V Id=1mA, Vds=10V Id=5A, Vgs=10V Id=5A, Vgs=4.5V Id=5A, Vds=10V If=10A, Vgs=0V 15 0.8 1.1 MIN TYP MAX 10 ±1 1.0 2.5 0.017 0.026 UNITS µA µA V S V
Dynamic Characteristics
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=10V, Vgs=0V f=1MHz MIN TYP 1350 800 300 MAX
Ta=25°C UNITS pF pF pF
Switching Characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=5V, Id=5A Vdd=10V CONDITIONS MIN TYP 20 35 35 20 MAX
Ta=25°C UNITS ns ns ns ns
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Thermal Characteristics
PARAMETER Thermal Resistance (channel-ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS °C/W
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DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Pulse Test, Ta=25°C
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
Pulse Test, Vds=10V
Drain Current:Id (A)
Drain Current:Id (A)
Drain-Source Voltage:Vds (V)
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE
Pulse Test, Ta=25°C
DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
Pulse Test, Ta=25°C
Drain-Source On-State Resistance :Rds (on) ()
Drain-Source On-State Resistance :Rds (on) ()
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE
Pulse Test
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE
Vds=10V, Id=1mA
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Ambient Temp.:Topr (°C)
Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V)
Drain-Source On-State Resistance :Rds (on) ()
Ambient Temp.:Topr (°C)
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