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Details, datasheet, quote on part number:XP131A1235SR
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Datasheet text preview:
NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.035 (max) NUltra High-Speed Switching NSOP-8 Package
GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
The XP131A1235SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
Low on-state resistance : Rds (on) = 0.035 ( Vgs = 4.5V ) : Rds (on) = 0.048 ( Vgs = 2.5V ) Ultra high-speed switching Operational Voltage : 2.5V High density mounting : SOP-8
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695
DC Characteristics
PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = 20V , Vgs = 0V Vgs = ± 12V , Vds = 0V Id = 1mA , Vds = 10V Id = 4A , Vgs = 4.5V Id = 4A , Vgs = 2.5V Id = 4A , Vds = 10V If = 7A , Vgs = 0V 0.5 0.025 0.035 16 0.85 1.1 MIN TYP MAX 10
±1
Ta=25 ° C UNITS µA µA V S V
1.2 0.035 0.048
Dynamic Characteristics
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = 10V , Vgs = 0V f = 1 MHz MIN TYP 760 430 200 MAX
Ta=25 ° C UNITS pF pF pF
Switching Characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = 5V , Id = 4A Vdd = 10V CONDITIONS MIN TYP 10 20 55 15 MAX
Ta=25 ° C UNITS ns ns ns ns
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Thermal Characteristics
PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS °C / W
696
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697
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