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Details, datasheet, quote on part number:XP131A1715SR
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Datasheet text preview:
NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.012 (max) NUltra High-Speed Switching NSOP-8 Package
GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
The XP131A1715SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
Low on-state resistance : Rds (on) = 0.012 ( Vgs = 4.5V ) : Rds (on) = 0.015 ( Vgs = 2.5V ) : Rds (on) = 0.025 ( Vgs = 1.5V ) Ultra high-speed switching Operational Voltage : 1.5V High density mounting : SOP-8
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Ta=25 OC PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Tch Tstg 150 -55 ~ 150
O
SYMBOL Vdss Vgss Id Idp Idr Pd
RATINGS 20 +8 10 40 10 2.5
UNITS V V A A A W C C
O
( note ) : When implemented on a glass epoxy PCB
711
8&MFDUSJDBM6$IBSBDUFSJTUJDT
DC Characteristics
PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. Rds ( on ) SYMBOL Idss Igss Vgs (off ) CONDITIONS Vds = 20V , Vgs = 0V Vgs = ± 8V , Vds = 0V Id = 1mA , Vds = 10V Id = 5A , Vgs = 4.5V Id = 5A , Vgs = 2.5V Id = 5A , Vgs = 1.5V | Yfs | Vf Id = 5A , Vds = 10V If = 10A , Vgs = 0V 0.5 0.009 0.011 0.017 34 0.8 1.1 MIN TYP MAX 10
±1
Ta=25 ° C UNITS µA µA V S V
1.2 0.012 0.015 0.025
Dynamic Characteristics
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = 10V , Vgs = 0V f = 1 MHz MIN TYP 2000 1000 450 MAX
Ta=25 ° C UNITS pF pF pF
Switching Characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = 5V , Id = 5A Vdd = 10V CONDITIONS MIN TYP 15 25 95 15 MAX
Ta=25 ° C UNITS ns ns ns ns
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Thermal Characteristics
PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS °C / W
712
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
5VMT|P+|TUsP+0mlno
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
5VMT|P+|TU
Drain Current:Id (A)
R~TmCR
Drain-Source Voltage:Vds (V)
Drain Current:Id (A)
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE
Drain-Source On-State Resistance:Rds (on) (eF)
5VMT|P+|TUsP+0mlno
DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
Drain-Source On-State Resistance:Rds (on) (eF)
5VMT|P+|TUsP+0mlno
B°mCkg
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE
Drain-Source On-State Resistance:Rds (on) (eF)
5VMT|P+|TU
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE
5VMT|P+|TUo|+0mlno
B°mng
Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V)
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Ambient Temp. :Topr (o )
Ambient Temp. :Topr (o )
713
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