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Details, datasheet, quote on part number:XP132A01A0SR
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Datasheet text preview:
NP-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.105 (max) NUltra High-Speed Switching NSOP-8 Package
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GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
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Low on-state resistance : Rds(on)=0.075(Vgs=-10V) : Rds(on)=0.105(Vgs=-5.5V) Ultra high-speed switching Operational Voltage : -5.5V High density mounting : SOP-8
The XP132A01A0SR is a P-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
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PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -30 ±20 -5 -15 -5 2.5 150 -55~150
Ta=25: UNITS V V A A A W : :
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Note: When implemented on a glass epoxy PCB
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DC Characteristics
PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage
Note: Effective during pulse test.
Ta=25: SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=-30V, Vgs=0V Vgs=±20V, Vds=0V Id=-1mA, Vds=-10V Id=-3A, Vgs=-10V Id=-1A, Vgs=-5.5V Id=-3A, Vds=-10V If=-5A, Vgs=0V 5 -0.85 -1.1 MIN TYP MAX -10 ±10 -1.0 -2.5 0.075 0.105 UNITS µA µA V S V
Dynamic Characteristics
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=-10V, Vgs=0V f=1MHz MIN TYP 780 560 200 MAX
Ta=25: UNITS pF pF pF
Switching Characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=-5V, Id=-3A Vdd=-10V CONDITIONS MIN TYP 20 25 30 20 MAX
Ta=25: UNITS ns ns ns ns
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Thermal Characteristics
PARAMETER Thermal Resistance (channel-ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS °C/W
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DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Pulse Test, Ta=25:
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
Pulse Test
Drain Current:Id (A)
Drain-Source Voltage:Vds (V)
Drain Current:Id (A)
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE
Pulse Test, Ta=25:
DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
Pulse Test, Ta=25:
Drain-Source On-State Resistance :Rds (on) ()
Gate-Source Voltage:Vgs (V)
Drain-Source On-State Resistance :Rds (on) ()
Drain Current:Id (A)
DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE
Pulse Test
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE
Vds=-10V, Id=-1mA
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Ambient Temp.:Topr (:)
Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V)
Drain-Source On-State Resistance :Rds (on) ()
Ambient Temp.:Topr (:)
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