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Details, datasheet, quote on part number:XP132A11A1SR
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Datasheet text preview:
NP-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.11 (max) NUltra High-Speed Switching NSOP-8 Package
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GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
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Low on-state resistance : Rds (on) = 0.065 ( Vgs = -10V ) : Rds (on) = 0.11 ( Vgs = -4.5V ) Ultra high-speed switching Operational Voltage : -4.5V High density mounting : SOP-8
The XP132A11A1SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
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PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature SYMBOL Vdss Vgss Id I dp Idr Pd Tch Tstg RATINGS - 30 + 20 -5 - 20 -5 2.5 150 - 55 ~ 150
Ta=25 OC UNITS V V A A A W
O
11
C C
O
( note ) : When implemented on a glass epoxy PCB
731
DC Characteristics P
ARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = - 30V , Vgs = 0V Vgs = o¶ 20V , Vds = 0V Id = -1mA , Vds = - 10V Id = - 3A , Vgs = - 10V Id = - 3A , Vgs = - 4.5V Id = - 3A , Vds = - 10V If = - 5A , Vgs = 0V - 1.0 0.055 0.095 6 - 0.85 - 1.1 MIN TYP MAX - 10 o¶ 1 - 2.5 0.065 0.1 1
Ta=25 o UNITS µA µA V S V
Dynamic Characteristics P
ARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = - 10V , Vgs = 0V f = 1 MHz MIN TYP 680 450 170 MAX
Ta=25 o UNITS pF pF pF
Switching Characteristics P
ARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = - 5V , Id = - 3A Vdd = - 10V CONDITIONS MIN TYP 15 20
30
Ta=25 o MAX UNITS ns ns ns ns
20
11
Thermal Characteristics
PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS o / W
732
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
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DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
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Drain Current:Id (A)
Drain Current:Id (A)
+0mNnno
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Drain-Source Voltage:Vds (V)
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE
Drain-Source On-State Resistance :Rds (on) (eF) Drain-Source On-State Resistance :Rds (on) (eF)
DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
5VMT|P+|TUsP+0PmPlno
B°mNng
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE
Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V)
ktu
5VMT|P+|TU
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE
kth ktd kta ktl k Nktl Nkta Nktd Nkth Nnk
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Drain-Source On-State Resistance :Rds (on) (eF)
11
ktln ktl
ktCn
R~TmNatnR B°mNng PNug
ktC ktkn
NCkR NugsPNng
k Nnk k nk Ckk Cnk
k
nk
Ckk
Cnk
Ambient Temp. :Topr (o )
Ambient Temp. :Topr (o )
733
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