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Details, datasheet, quote on part number:XP132A1275SR
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Datasheet text preview:
NP-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.075 (max) NUltra High-Speed Switching NSOP-8 Package
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GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
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Low on-state resistance : Rds (on) = 0.075 ( Vgs = -4.5V ) : Rds (on) = 0.115 ( Vgs = -2.5V ) Ultra high-speed switching Operational Voltage : -2.5V High density mounting : SOP-8
The XP132A1275SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
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PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Tch Tstg 150 -55 ~ 150 SYMBOL Vdss Vgss Id Idp Idr Pd RATINGS -20 +12 -5 - 20 -5 2.5
Ta=25 OC UNITS V V A A A W
O
11
C C
O
( note ) : When implemented on a glass epoxy PCB
735
DC Characteristics
PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = - 20V , Vgs = 0V Vgs = ± 12V , Vds = 0V Id = -1mA , Vds = - 10V Id = - 3A , Vgs = - 4.5V Id = - 3A , Vgs = - 2.5V Id = - 3A , Vds = - 10V If = - 5A , Vgs = 0V - 0.5 0.06 0.092 8 - 0.85 - 1.1 MIN TYP MAX - 10 ±1 - 1.2 0.075 0.115
Ta=25 ° C UNITS µA µA V S V
Dynamic Characteristics
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = - 10V , Vgs = 0V f = 1 MHz MIN TYP 770 440 180 MAX
Ta=25 ° C UNITS pF pF pF
Switching Characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = - 5V , Id = - 3A Vdd = - 10V CONDITIONS MIN TYP 10 25 45
40
MAX
Ta=25 ° C UNITS ns ns ns ns
11
Thermal Characteristics
PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS °C / W
736
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
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DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
Nlk
+0mNnno Clno
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NnR NatnR
NutnR PNuR
lno
NCd
Drain Current :Id (A)
NaR PNltnR
Drain Current :Id (A)
NCl
Nh
NlR
Na
R~TmNCtnR
k k NC Nl Nu Na Nn
Drain-Source Voltage :Vds (V)
Gate-Source Voltage :Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE
Drain-Source On-State Resistance :Rds (on) (eF) Drain-Source On-State Resistance :Rds (on) (eF)
ktl
5VMT|P+|TUsP+0mlno
DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
C
5VMT|P+|TUsP+0mlno
ktCd
ktCl
B°mNng Nug
R~TmNltnR
ktC
NatnR
ktkh
ktka
k k Nl Na Nd Nh NCk
ktkC k Nn NCk NCn Nlk
Gate-Source Voltage :Vgs (V)
Drain Current :Id (A)
DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE
Drain-Source On-State Resistance :Rds (on) (eF)
ktl
5VMT|P+|TU
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE
ktd
R°TmNCkRsPB°mNCNg
Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V)
11
ktCd
B°mNng
kta ktl
ktCl
R~TmNltnR PNug
k Nktl Nkta Nktd Nnk
ktkh
NugsPNng NatnR
ktka
k Nnk k nk Ckk Cnk
k
nk
Ckk
Cnk
Ambient Temp. :Topr (o )
Ambient Temp. :Topr (o )
737
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