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Details, datasheet, quote on part number:XP132A1545SR
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Datasheet text preview:
NP-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.045 (max) NUltra High-Speed Switching NSOP-8 Package
GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
The XP132A1545SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
Low on-state resistance : Rds (on) = 0.03 ( Vgs = -10V ) : Rds (on) = 0.045 ( Vgs = -4.5V ) Ultra high-speed switching Operational Voltage : -4.5V High density mounting : SOP-8
Ta=25 OC PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Tch Tstg 150 -55 ~ 150
O
SYMBOL Vdss Vgss Id Idp Idr Pd
RATINGS -30 + 20 -8 - 32 -8 2.5
UNITS V V A A A W C C
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O
( note ) : When implemented on a glass epoxy PCB
739
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DC Characteristics
PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = - 30V , Vgs = 0V Vgs = ± 20V , Vds = 0V Id = -1mA , Vds = - 10V Id = - 4A , Vgs = - 10V Id = - 4A , Vgs = - 4.5V Id = - 4A , Vds = - 10V If = - 8A , Vgs = 0V - 1.0 0.025 0.038 11 - 0.85 - 1.1 MIN TYP MAX - 10
±1
Ta=25 ° C UNITS µA µA V S V
- 2.5 0.03 0.045
Dynamic Characteristics
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = - 10V , Vgs = 0V f = 1 MHz MIN TYP 1500 1000 500 MAX
Ta=25 ° C UNITS pF pF pF
Switching Characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = - 5V , Id = - 4A Vdd = - 10V CONDITIONS MIN TYP 20 45
40 35
MAX
Ta=25 ° C UNITS ns ns ns ns
11
Thermal Characteristics
PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS °C / W
740
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
5VMT|P+|TUsP+0PmPlno
+0mNnno
Drain Current:Id (A)
R~TmNltnR
Drain-Source Voltage:Vds (V)
Drain Current:Id (A)
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE
5VMT|P+|TUsP+0PmPlno
DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
Drain-Source On-State Resistance:Rds (on)(eF)
Drain-Source On-State Resistance:Rds (on)(eF)
B°mNhg Nag
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE
Drain-Source On-State Resistance:Rds (on)(eF)
ktkh ktkp ktkd ktkn
R~TmNatnR B°mNhg PNag
5VMT|P+|TU
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE
Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V)
11
ktka ktku ktkl
NCkR NagsPNhg
ktkC k Nnk k nk Ckk Cnk
Ambient Temp.:Topr (o )
Ambient Temp.:Topr (o )
741
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