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Details, datasheet, quote on part number:XP132A1635SR
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Datasheet text preview:
NP-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.033 (max) NUltra High-Speed Switching NSOP-8 Package
GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
The XP132A1365SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
Low on-state resistance : Rds (on) = 0.033 ( Vgs = -4.5V ) : Rds (on) = 0.055 ( Vgs = -2.5V ) Ultra high-speed switching Operational Voltage : -2.5V High density mounting : SOP-8
Ta=25 OC PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Tch Tstg 150 -55 ~ 150
O
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SYMBOL Vdss Vgss Id Idp Idr Pd
RATINGS -20 + 12 -8 - 32 -8 2.5
UNITS V V A A A W C C
O
( note ) : When implemented on a glass epoxy PCB
743
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DC Characteristics
PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = - 20V , Vgs = 0V Vgs = ± 12V , Vds = 0V Id = -1mA , Vds = - 10V Id = - 4A , Vgs = - 4.5V Id = - 4A , Vgs = - 2.5V Id = - 4A , Vds = - 10V If = - 8A , Vgs = 0V - 0.5 0.025 0.04 16 - 0.85 - 1.1 MIN TYP MAX - 10
±1
Ta=25 ° C UNITS µA µA V S V
- 1.2 0.033 0.055
Dynamic Characteristics
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = - 10V , Vgs = 0V f = 1 MHz MIN TYP 1700 1000 500 MAX
Ta=25 ° C UNITS pF pF pF
Switching Characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = - 5V , Id = - 4A Vdd = - 10V CONDITIONS MIN TYP 15 45 70
65
MAX
Ta=25 ° C UNITS ns ns ns ns
11
Thermal Characteristics
PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS °C / W
744
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
5VMT|P+|TUsPR°TmNCkR
Drain Current:Id (A)
R~TmNCtnR
Drain-Source Voltage:Vds (V)
Drain Current:Id (A)
+0mNnno
Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE
Drain-Source On-State Resistance:Rds (on)(eF) Drain-Source On-State Resistance:Rds (on)(eF)
DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
5VMT|P+|TUsP+0PmPlno
B°mNhg
Gate-Source Voltage:Vgs (V)
Drain Current:Id (A)
DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE
Drain-Source On-State Resistance:Rds (on)(eF)
ktkh ktkp ktkd
B°mNhg
5VMT|P+|TU
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE
Gate-Source Cut-Off Voltage variance :Vgs(off) Variance (V)
11
ktkn ktka ktku ktkl ktkC k Nnk k
R~TmNltnR PNwbg
NagsPNhg NatnR
nk
Ckk
Cnk
Ambient Temp. :Topr (o )
Ambient Temp. :Topr (o )
745
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