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Details, datasheet, quote on part number:XP133A1145SR
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Datasheet text preview:
NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.045 (max) NUltra High-Speed Switching NSOP-8 Package NTwo FET Devices Built-in
GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
The XP133A1145SR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
Low on-state resistance : Rds(on)=0.033 (Vgs=10V) : Rds(on)=0.045 (Vgs=4.5V) Ultra high-speed switching Operational Voltage : 4.5V High density mounting : SOP-8
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PIN NUMBER 1 2 3 4 5~6 7~8
PIN NAME S1 G1 S2 G2 D2 D1
FUNCTION Source Gate Source Gate Drain Drain
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T a = 2 5 °C UNITS V V A A A W °C °C
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PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature
SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg
RATINGS 30 ±20 6 20 6 2 150 -55~150
Note: When implemented on a glass epoxy PCB
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DC Characteristics
PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage
Note: Effective during pulse test.
T a = 2 5 °C SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=30V, Vgs=0V Vgs=±20V, Vds=0V Id=1mA, Vds=10V Id=3A, Vgs=10V Id=3A, Vgs=4.5V Id=3A, Vds=10V If=6A, Vgs=0V MIN TYP MAX 10 ±1 2.5 0.026 0.035 12 0.85 1.1 0.033 0.045 UNITS µA µA V S V
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Dynamic Characteristics
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=10V, Vgs=0V f=1MHz MIN TYP 620 350 120 MAX
T a = 2 5 °C UNITS pF pF pF
Switching Characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=5V, Id=3A Vdd=10V CONDITIONS MIN TYP 15 20 30 10 MAX
T a = 2 5 °C UNITS ns ns ns ns
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Thermal Characteristics
PARAMETER Thermal Resistance (channel-ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS °C/W
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DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
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DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE
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DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
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DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE
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GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE
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