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Details, datasheet, quote on part number:XP133A1235SR
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Datasheet text preview:
NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.035 (max) NUltra High-Speed Switching NSOP-8 Package NTwo FET Devices Built-in
GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
The XP133A1235SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
Low on-state resistance : Rds (on) = 0.035 ( Vgs = 4.5V ) : Rds (on) = 0.048 ( Vgs = 2.5V ) Ultra high-speed switching Operational Voltage : 2.5V High density mounting : SOP-8
PIN NUMBER 1 2 3 4 5~6 7~8
PIN NAME S1 G1 S2 G2 D2 D1
FUNCTION Source Gate Source Gate Drain Drain
11
Ta=25 OC UNITS V V A A A W
O
PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature
SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg
RATINGS 20 +12 6 20 6 2 150 - 55 ~ 150
C C
O
( note ) : When implemented on a glass epoxy PCB
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DC Characteristics
PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = 20V , Vgs = 0V Vgs = ± 12V , Vds = 0V Id = 1mA , Vds = 10V Id = 3A , Vgs = 4.5V Id = 3A , Vgs = 2.5V Id = 4A , Vds = 10V If = 7A , Vgs = 0V 0.5 0.026 0.035 14 0.85 1.1 MIN TYP MAX 10
±1
Ta=25 ° C UNITS µA µA V S V
1.2 0.035 0.048
Dynamic Characteristics
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = 10V , Vgs = 0V f = 1 MHz MIN TYP 760 430 200 MAX
Ta=25 ° C UNITS pF pF pF
Switching Characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = 5V , Id = 3A Vdd = 10V CONDITIONS MIN TYP 10 20
55 15
MAX
Ta=25 ° C UNITS ns ns ns ns
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Thermal Characteristics
PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS °C / W
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DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
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DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
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GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE
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