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Details, datasheet, quote on part number:XP133A1330SR
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Datasheet text preview:
NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.03 (max) NUltra High-Speed Switching NSOP-8 Package NTwo FET Devices Built-in
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GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
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Low on-state resistance : Rds (on) = 0.03 ( Vgs = 4.5V ) : Rds (on) = 0.04 ( Vgs = 2.5V ) : Rds (on) = 0.07 ( Vgs = 1.5V ) Ultra high-speed switching Operational Voltage : 1.5V High density mounting : SOP-8
The XP133A1330SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
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PIN NUMBER 1 2 3 4 5~6 7~8 PIN NAME S1 G1 S2 G2 D2 D1 FUNCTION Source Gate Source Gate Drain Drain
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T a = 2 5 OC PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Tch Tstg 150 - 55 ~ 150
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UNITS V V A A A W C C
SYMBOL Vdss Vgss Id Idp Idr Pd
RATINGS 20 +8 6 20 6 2
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( note ) : When implemented on a glass epoxy PCB
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DC Characteristics
PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage SYMBOL Idss Igss Vgs (off ) Rds ( on ) CONDITIONS Vds = 20V , Vgs = 0V Vgs = ± 8V , Vds = 0V Id = 1mA , Vds = 10V Id = 3A , Vgs = 4.5V Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. Id = 3A , Vgs = 2.5V Id = 1A , Vgs = 1.5V | Yfs | Vf Id = 3A , Vds = 10V If = 6A , Vgs = 0V 0.5 0.025 0.03 0.045 20 0.85 1.1 MIN TYP MAX 10
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Ta=25 ° C UNITS µA µA V S V
1.2 0.03 0.04 0.07
Dynamic Characteristics
PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = 10V , Vgs = 0V f = 1 MHz MIN TYP 950 430 180 MAX
Ta=25 ° C UNITS pF pF pF
Switching Characteristics
PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = 5V , Id = 3A Vdd = 10V CONDITIONS MIN TYP 15 20
80 15
MAX
Ta=25 ° C UNITS ns ns ns ns
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Thermal Characteristics
PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS °C / W
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DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
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DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE
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DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
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DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE
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GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE
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