Details, datasheet, quote on part number: 20FL2C48A
Part20FL2C48A
CategoryDiscrete => Diodes & Rectifiers => Fast Recovery Diodes
DescriptionHigh Efficiency Diode Stack (hed) Silicon Epitaxial Type
CompanyToshiba America Electronic Components, Inc.
DatasheetDownload 20FL2C48A datasheet
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Some Part number from the same manufacture Toshiba America Electronic Components, Inc.
20FL2CZ47A Diode ( Switching Type Power Supply Application )
20FWJ2C48M VRRM (V) = 30 ;; Vfm(max) (V) = 0.47 ;; If(av) (Amps) = 20 ;; Package = TO-220FL ;; Feature =
20FWJ2CZ47M VRRM (V) = 30 ;; Vfm(max) (V) = 0.47 ;; If(av) (Amps) = 20 ;; Package = TO-220NIS ;; Feature =
20GL2C41A Diode ( Switching Type Power Supply Application )
20JL2C41
20JL2C41A Peak Repetitive Reverse Voltage VRRM (V) = 600 ;; Average Forward or Average Output Rectified Current (Amps) = 20 ;; Reverse Recovery Time TRR (max) (ns) = 35 ;; Configuration = Center Tap ;; Package = TO-220NIS
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2FWJ42M Schottky Barrier Rectifier ( Switching Type Power Supply Application )
2FWJ42N VRRM (V) = 30 ;; Vfm(max) (V) = 0.37 ;; If(av) (Amps) = 2 ;; Package = DO-15L ;; Feature =
2GLZ47A High Efficiency Rectifier ( Switching Type Power Supply Application )
2GUZ47 Diode ( Switching Type Power Supply Application )
2GWJ2C42 VRRM (V) = 40 ;; Vfm(max) (V) = 0.55 ;; If(av) (Amps) = 2 ;; Package = Power Mold ;; Feature =
2GWJ42 VRRM (V) = 40 ;; Vfm(max) (V) = 0.55 ;; If(av) (Amps) = 2 ;; Package = DO-15L ;; Feature =
2GWJ42C Schottky Barrier Rectifier ( High Speed Rectifier Applications )
2N3904 Cell Delay of ND2 (FO=1) = 40 ;; Cell Delay of ND2 (FO=5) = 200 ;; Power Dissipation of ND2 (FO=1) = 100~300 ;; Leakage Current of ND2 (Vdd=1.5V) = 1 ;; Threshold Voltage = TO-92 ;; Additional Information
2N3906 Cell Delay of ND2 (FO=1) = -40 ;; Cell Delay of ND2 (FO=5) = -200 ;; Power Dissipation of ND2 (FO=1) = 100~300 ;; Leakage Current of ND2 (Vdd=1.5V) = -1 ;; Threshold Voltage = TO-92 ;; Additional Information
2N4123 Cell Delay of ND2 (FO=1) = 30 ;; Cell Delay of ND2 (FO=5) = 200 ;; Power Dissipation of ND2 (FO=1) = 50~150 ;; Leakage Current of ND2 (Vdd=1.5V) = 1 ;; Threshold Voltage = TO-92 ;; Additional Information
2N4124 Cell Delay of ND2 (FO=1) = 25 ;; Cell Delay of ND2 (FO=5) = 200 ;; Power Dissipation of ND2 (FO=1) = 120~360 ;; Leakage Current of ND2 (Vdd=1.5V) = 1 ;; Threshold Voltage = TO-92 ;; Additional Information
2N4125 Cell Delay of ND2 (FO=1) = -30 ;; Cell Delay of ND2 (FO=5) = -200 ;; Power Dissipation of ND2 (FO=1) = 50~150 ;; Leakage Current of ND2 (Vdd=1.5V) = -1 ;; Threshold Voltage = TO-92 ;; Additional Information

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TPC6101(TE85L) : Fet - Single Discrete Semiconductor Product 4.5A 20V - Surface Mount; MOSFET P-CH 20V 4.5A VS-6 Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET P-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 20V ; Current - Continuous Drain (Id) @ 25° C: 4.5A ; Rds On (Max) @ Id, Vgs: 60 mOhm @ 2.2A, 4.5V ; Input Capacitance (Ciss) @ Vds: 830pF @ 10V ; Power - Max: - ; Packaging: Cut

CMF04(TE12L,Q,M) : Diodes, Rectifier - Single Discrete Semiconductor Product 500mA 800V Standard; DIODE FAST REC 800V 0.5A MFLAT Specifications: Diode Type: Standard ; Voltage - DC Reverse (Vr) (Max): 800V ; Current - Average Rectified (Io): 500mA ; Voltage - Forward (Vf) (Max) @ If: 2.5V @ 500mA ; Reverse Recovery Time (trr): 100ns ; Current - Reverse Leakage @ Vr: 50ľA @ 800V ; Speed: Fast Recovery =< 500ns,>200mA (Io) ;

 
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