Details, datasheet, quote on part number: 20JL2C41
Part20JL2C41
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
DescriptionDiode ( Switching Type Power Supply Application )
CompanyToshiba America Electronic Components, Inc.
DatasheetDownload 20JL2C41 datasheet
Quote
Find where to buy
 
  
Some Part number from the same manufacture Toshiba America Electronic Components, Inc.
20JL2C41A Peak Repetitive Reverse Voltage VRRM (V) = 600 ;; Average Forward or Average Output Rectified Current (Amps) = 20 ;; Reverse Recovery Time TRR (max) (ns) = 35 ;; Configuration = Center Tap ;; Package = TO-220NIS
20L6P45 Rectifier Module ( Three Phase Full Wave Bridge Aplications )
20U6P45 Rectifier Module ( Three Phase Full Wave Bridge Applications )
2AS1832F Transistor ( Audio Frequency General Purpose Amplifier Applications )
2FWJ42M Schottky Barrier Rectifier ( Switching Type Power Supply Application )
2FWJ42N VRRM (V) = 30 ;; Vfm(max) (V) = 0.37 ;; If(av) (Amps) = 2 ;; Package = DO-15L ;; Feature =
2GLZ47A High Efficiency Rectifier ( Switching Type Power Supply Application )
2GUZ47 Diode ( Switching Type Power Supply Application )
2GWJ2C42 VRRM (V) = 40 ;; Vfm(max) (V) = 0.55 ;; If(av) (Amps) = 2 ;; Package = Power Mold ;; Feature =
2GWJ42 VRRM (V) = 40 ;; Vfm(max) (V) = 0.55 ;; If(av) (Amps) = 2 ;; Package = DO-15L ;; Feature =
2GWJ42C Schottky Barrier Rectifier ( High Speed Rectifier Applications )
2N3904 Cell Delay of ND2 (FO=1) = 40 ;; Cell Delay of ND2 (FO=5) = 200 ;; Power Dissipation of ND2 (FO=1) = 100~300 ;; Leakage Current of ND2 (Vdd=1.5V) = 1 ;; Threshold Voltage = TO-92 ;; Additional Information
2N3906 Cell Delay of ND2 (FO=1) = -40 ;; Cell Delay of ND2 (FO=5) = -200 ;; Power Dissipation of ND2 (FO=1) = 100~300 ;; Leakage Current of ND2 (Vdd=1.5V) = -1 ;; Threshold Voltage = TO-92 ;; Additional Information
2N4123 Cell Delay of ND2 (FO=1) = 30 ;; Cell Delay of ND2 (FO=5) = 200 ;; Power Dissipation of ND2 (FO=1) = 50~150 ;; Leakage Current of ND2 (Vdd=1.5V) = 1 ;; Threshold Voltage = TO-92 ;; Additional Information
2N4124 Cell Delay of ND2 (FO=1) = 25 ;; Cell Delay of ND2 (FO=5) = 200 ;; Power Dissipation of ND2 (FO=1) = 120~360 ;; Leakage Current of ND2 (Vdd=1.5V) = 1 ;; Threshold Voltage = TO-92 ;; Additional Information
2N4125 Cell Delay of ND2 (FO=1) = -30 ;; Cell Delay of ND2 (FO=5) = -200 ;; Power Dissipation of ND2 (FO=1) = 50~150 ;; Leakage Current of ND2 (Vdd=1.5V) = -1 ;; Threshold Voltage = TO-92 ;; Additional Information
2N4126 Cell Delay of ND2 (FO=1) = -25 ;; Cell Delay of ND2 (FO=5) = -200 ;; Power Dissipation of ND2 (FO=1) = 120~360 ;; Leakage Current of ND2 (Vdd=1.5V) = -1 ;; Threshold Voltage = TO-92 ;; Additional Information
2N4400 Cell Delay of ND2 (FO=1) = 40 ;; Cell Delay of ND2 (FO=5) = 600 ;; Power Dissipation of ND2 (FO=1) = 50~150 ;; Leakage Current of ND2 (Vdd=1.5V) = 1 ;; Threshold Voltage = TO-92 ;; Additional Information
2N4401
2N4403 Cell Delay of ND2 (FO=1) = -40 ;; Cell Delay of ND2 (FO=5) = -600 ;; Power Dissipation of ND2 (FO=1) = 100~300 ;; Leakage Current of ND2 (Vdd=1.5V) = -1 ;; Threshold Voltage = TO-92 ;; Additional Information
2N5400 Cell Delay of ND2 (FO=1) = -120 ;; Cell Delay of ND2 (FO=5) = -600 ;; Power Dissipation of ND2 (FO=1) = 40~180 ;; Leakage Current of ND2 (Vdd=1.5V) = -5 ;; Threshold Voltage = TO-92 ;; Additional Information
Same catergory

2N3738 : Screening Options Available = ;; Polarity = NPN ;; Package = TO66 (TO213AA) ;; Vceo = 225V ;; IC(cont) = 0.25A ;; HFE(min) = 40 ;; HFE(max) = 200 ;; @ Vce/ic = 10V / 100mA ;; FT = 10MHz ;; PD = 20W.

8TQ : 5 to 100 Amp. Schottky Rectifier 8 Amp. IF(AV) Rectangular waveform VRRM range IFSM 5 µs sine @ 8 Apk, = 125°C range °C The 8TQ Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation 175° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling.

BC369ZL1 : High Current Transistor Pnp, Package: TO-92 (TO-226), Pins=3. COLLECTOR 2 3 BASE NPN 1 EMITTER 1 EMITTER 3 BASE PNP COLLECTOR 2 Rating Collector­Emitter Voltage Collector­Emitter Voltage Emitter­Base Voltage Collector Current Continuous Total Device Dissipation = 25°C Derate above 25°C Total Device Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD TJ, Tstg.

BFY280 : Hirel NPN Silicon RF Transistor ( Hirel Discrete And Microwave Semiconductor ).

FQP8N25 : 250V N-channel QFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

KV1400 : Variable Capacitance Diode. s Excellent Linearity (CV Curve) s Large Capacitance Ratio = 2.10 minimum) with Very Low Series Resistance s Two Diodes in a Miniature Package (SOT23-3) s Very Small Capacitance Deviation at Tape/Reel APPLICATIONS The an 8 volt range variable capacitance diode designed for FM tuner applications. It contains two elements housed in the miniature SOT23-3.

TP3024B : UHF Linear Power Transistor. The is a balanced transistor designed specifically for use in cellular radio systems. This device permits the design of a Class AB push­pull, high gain, broadband amplifier having a high degree of linearity without the need for complicated biasing circuitry. Specified 26 Volts, 960 MHz Characteristics: Output Power 35.5 W Minimum Gain 7.5 dB IQtotal.

0402R-10NG : 1 ELEMENT, 0.01 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ceramic ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 0.0100 microH ; Inductance Tolerance: 2 (+/- %) ; DCR: 0.1950.

CFP1/4 : RESISTOR, CARBON FILM, 0.25 W, 2; 5 %, 450; 700; 1000 ppm, 2.2 ohm - 1000000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: CarbonFilm ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Operating DC Voltage: 300 volts ; Operating Temperature: -55 to 155 C (-67 to 311 F).

NT06FT102_3100 : RESISTOR, TEMPERATURE DEPENDENT, NTC, 1000 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0603, CHIP, 0603, LEAD FREE ; Resistance Range: 1000 ohms ; Tolerance: 1 +/- % ; Power Rating: 0.0050 watts (6.70E-6 HP) ; Operating Temperature: -40 to 125 C (-40 to 257 F) ; Standards and Certifications:.

PA0191 : 100 W, SMPS TRANSFORMER. s: Category: Power, Signal ; Other Transformer Types / Applications: SMPS TRANSFORMER ; Mounting: Chip Transformer ; Operating Frequency: 230000 Hz ; Input Voltage: 36 to 72 volts ; Output Voltage: 3.3 volts ; Operating Temperature: -40 to 125 C (-40 to 257 F).

SV1040 : 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-277. s: Rectifier Configuration / Technology: Schottky ; Package: ROHS COMPLIANT, PLASTIC PACKAGE-3 ; Number of Diodes: 1 ; VRRM: 40 volts ; IF: 10000 mA.

T498C225K035ZGE2K2 : CAPACITOR, TANTALUM, SOLID, POLARIZED, 35 V, 2.2 uF, SURFACE MOUNT, 2412. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; General : Polarized ; Capacitance Range: 2.2 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 35 volts ; Leakage Current: 0.8000 microamps ; Mounting Style: Surface Mount Technology ; EIA Case Size: 2412.

TSW16A : RESISTOR, NETWORK, FILM, ISOLATED, 1 W, SURFACE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), SOIC, SOIC ; Temperature Coefficient: 5 Âħppm/°C ; Operating DC Voltage: 100 volts ; Operating Temperature: -55 to 70 C (-67.

2N4400K : 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: TO-92, TO-92 STYLE, E-LINE PACKAGE-3.

 
0-C     D-L     M-R     S-Z