| Some Part number from the same manufacture Toshiba America Electronic Components, Inc. |
| 2AS1832F Transistor ( Audio Frequency General Purpose Amplifier Applications ) |
| 2FWJ42M Schottky Barrier Rectifier ( Switching Type Power Supply Application ) |
| 2FWJ42N VRRM (V) = 30 ;; Vfm(max) (V) = 0.37 ;; If(av) (Amps) = 2 ;; Package = DO-15L ;; Feature = |
| 2GLZ47A High Efficiency Rectifier ( Switching Type Power Supply Application ) |
| 2GUZ47 Diode ( Switching Type Power Supply Application ) |
| 2GWJ2C42 VRRM (V) = 40 ;; Vfm(max) (V) = 0.55 ;; If(av) (Amps) = 2 ;; Package = Power Mold ;; Feature = |
| 2GWJ42 VRRM (V) = 40 ;; Vfm(max) (V) = 0.55 ;; If(av) (Amps) = 2 ;; Package = DO-15L ;; Feature = |
| 2GWJ42C Schottky Barrier Rectifier ( High Speed Rectifier Applications ) |
| 2N3904 Cell Delay of ND2 (FO=1) = 40 ;; Cell Delay of ND2 (FO=5) = 200 ;; Power Dissipation of ND2 (FO=1) = 100~300 ;; Leakage Current of ND2 (Vdd=1.5V) = 1 ;; Threshold Voltage = TO-92 ;; Additional Information |
| 2N3906 Cell Delay of ND2 (FO=1) = -40 ;; Cell Delay of ND2 (FO=5) = -200 ;; Power Dissipation of ND2 (FO=1) = 100~300 ;; Leakage Current of ND2 (Vdd=1.5V) = -1 ;; Threshold Voltage = TO-92 ;; Additional Information |
| 2N4123 Cell Delay of ND2 (FO=1) = 30 ;; Cell Delay of ND2 (FO=5) = 200 ;; Power Dissipation of ND2 (FO=1) = 50~150 ;; Leakage Current of ND2 (Vdd=1.5V) = 1 ;; Threshold Voltage = TO-92 ;; Additional Information |
| 2N4124 Cell Delay of ND2 (FO=1) = 25 ;; Cell Delay of ND2 (FO=5) = 200 ;; Power Dissipation of ND2 (FO=1) = 120~360 ;; Leakage Current of ND2 (Vdd=1.5V) = 1 ;; Threshold Voltage = TO-92 ;; Additional Information |
| 2N4125 Cell Delay of ND2 (FO=1) = -30 ;; Cell Delay of ND2 (FO=5) = -200 ;; Power Dissipation of ND2 (FO=1) = 50~150 ;; Leakage Current of ND2 (Vdd=1.5V) = -1 ;; Threshold Voltage = TO-92 ;; Additional Information |
| 2N4126 Cell Delay of ND2 (FO=1) = -25 ;; Cell Delay of ND2 (FO=5) = -200 ;; Power Dissipation of ND2 (FO=1) = 120~360 ;; Leakage Current of ND2 (Vdd=1.5V) = -1 ;; Threshold Voltage = TO-92 ;; Additional Information |
| 2N4400 Cell Delay of ND2 (FO=1) = 40 ;; Cell Delay of ND2 (FO=5) = 600 ;; Power Dissipation of ND2 (FO=1) = 50~150 ;; Leakage Current of ND2 (Vdd=1.5V) = 1 ;; Threshold Voltage = TO-92 ;; Additional Information |
| 2N4401 |
| 2N4403 Cell Delay of ND2 (FO=1) = -40 ;; Cell Delay of ND2 (FO=5) = -600 ;; Power Dissipation of ND2 (FO=1) = 100~300 ;; Leakage Current of ND2 (Vdd=1.5V) = -1 ;; Threshold Voltage = TO-92 ;; Additional Information |
| 2N5400 Cell Delay of ND2 (FO=1) = -120 ;; Cell Delay of ND2 (FO=5) = -600 ;; Power Dissipation of ND2 (FO=1) = 40~180 ;; Leakage Current of ND2 (Vdd=1.5V) = -5 ;; Threshold Voltage = TO-92 ;; Additional Information |
| 2N5401 Cell Delay of ND2 (FO=1) = -150 ;; Cell Delay of ND2 (FO=5) = -600 ;; Power Dissipation of ND2 (FO=1) = 60~240 ;; Leakage Current of ND2 (Vdd=1.5V) = -5 ;; Threshold Voltage = TO-92 ;; Additional Information |
| 2N5550 Cell Delay of ND2 (FO=1) = 140 ;; Cell Delay of ND2 (FO=5) = 600 ;; Power Dissipation of ND2 (FO=1) = 60~250 ;; Leakage Current of ND2 (Vdd=1.5V) = 5 ;; Threshold Voltage = TO-92 ;; Additional Information |
| 2N5551 Cell Delay of ND2 (FO=1) = 160 ;; Cell Delay of ND2 (FO=5) = 600 ;; Power Dissipation of ND2 (FO=1) = 80~250 ;; Leakage Current of ND2 (Vdd=1.5V) = 5 ;; Threshold Voltage = TO-92 ;; Additional Information |
