|
|
Part: 2SK1358
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
Description: Field Effect Transistor. Silicon N Channel MOS Type
Company: Toshiba America Electronic Components, Inc.
Datasheet: Download 2SK1358 datasheet File size : 194 kB
Request For quote: Find where to buy 2SK1358
Datasheet text preview:
TOSHIBA
Discrete Semiconductors
2SK1358
Field Effect Transistor Silicon N Channel MOS Type (-MOS II.5) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications
Features · Low Drain-Source ON Resistance - RDS(ON) = 1.1 (Typ.) · High Forward Transfer Admittance - Yfs = 4.0S (Typ.) · Low Leakage Current - IDSS = 300µA (Max.) @ VDS = 720V · Enhancement-Mode - Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
Drain-Source Voltage Drain-Gate Voltage (RGS = 20k) Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc = 25°C) Channel Temperature Storage Temperature Range
Industrial Applications
Unit in mm
SYMBOL
VDSS VDGR VGSS ID IDP PD Tch Tstg
RATING
900 900 ±30 9 27 150 150 -55 ~ 150
UNIT
V V V A
W °C °C
Thermal Characteristics
CHARACTERISTIC
Thermal Resistance, Channel to Case Thermal Resistance, Channel to Ambient
SYMBOL
Rth(ch-c) Rth(ch-a)
MAX.
0.833 50
UNIT
°C/W °C/W
This transistor is an electrostatic sensitive device. Please handle with care.
TOSHIBA CORPORATION
1/6
2SK1358
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
Gate Leakage Current Drain Cut-off Current Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source ON Resistance Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Output Capacitance Rise Time Switching Time Turn-on Time Fall Time Turn-off Time
SYMBOL
IGSS IDSS V(BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf toff
TEST CONDITION
VGS = ±25V, VDS = 0V VDS = 720V, VGS = 0V ID = 10mA, VGS = 0V VDS = 10V, ID = 1mA ID = 4A, VGS = 10V VDS = 20V, ID = 4A VDS = 25V, VGS = 0V, f = 1MHz
MIN.
900 1.5 2.0
TYP.
1.1 4.0 1300 100 180 25 40 20 100
MAX.
±100 300 3.5 1.4 1800 150 260 50 80 40 200
UNIT
nA µA V V S pF
ns
Total Gate Charge (Gate-Source Plus Gate-Drain) Gate-Source Charge Gate-Drain ("Miller") Charge
Qg Qgs Qgd VDD = 400V, VGS = 10V, ID = 9A
120 70 50
240 nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
CHARACTERISTICS
Continuous Drain Reverse Current Pulse Drain Reverse Current Diode Forward Voltage
SYMBOL
IDR IDRP VDSF
TEST CONDITION
IDR = 9A, VGS = 0V
MIN.
TYP.
MAX.
9 27 -2.0
UNIT
A A V
2/6
TOSHIBA CORPORATION
2SK1358
TOSHIBA CORPORATION
3/6
2SK1358
4/6
TOSHIBA CORPORATION
2SK1358
TOSHIBA CORPORATION
5/6
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
|
|
|
