|Category||RF & Microwaves => Diodes => Varactor Diodes|
|Description||VR (v) = 16 ;; Ir (nA) = 20 ;; CT(1) (pF) = 435 to 540 ;; CT(2) (pF) = 19.9 to 26.7 ;; CT(1)/CT(2) = - ;; .rs(Typ.) Ohms = - ;; Package = FM8 ;; Application = am Tuning|
|Company||Toshiba America Electronic Components, Inc.|
|Datasheet||Download HN1V02H datasheet
|Some Part number from the same manufacture Toshiba America Electronic Components, Inc.|
|HN20S01F Silicon Epitaxial Schottky Barrier Type Diode|
|HN2A01FU PNP Epitaxial Type ( Audio Frequency General Purpose Amplifier Applications )|
|HN2C01FU NPN Epitaxial Type ( Audio Frequency General Purpose Amplifier Applications )|
|HN2C10FE Package = ES6 ;; Application = VHF/uhf Lna|
|HN2C10FT Vceo (V) = 12/12 ;; Ic (mA) = 80/80 ;; PC
(mW) = 200 ;; .hFE = - ;; .fT(Typ.) (GHz) = 7/7 ;; NF (Typ.) (dB) = - ;; Contents = 2SC5086/2SC5086 ;; Package = TU6 ;; Application = Lna Buff Amp
|HN2C10FU Vceo (V) = 12 ;; Ic (mA) = 80 ;; PC
(mW) = 200 ;; .hFE = 80 to 240 ;; .fT(Typ.) (GHz) = 7 ;; NF (Typ.) (dB) = 1.1 ;; Contents = 2SC5084 X 2 ;; Package = US6 ;; Application = VHF/uhf Low Noise Amp
|HN2C11FU Vceo (V) = 10 ;; Ic (mA) = 40 ;; PC
(mW) = 200 ;; .hFE = 50 to 160 ;; .fT(Typ.) (GHz) = 10 ;; NF (Typ.) (dB) = 1.7 ;; Contents = - ;; Package = US6 ;; Application = UHF Lna
|HN2C12FE Package = ES6 ;; Application = VHF/uhf Lna|
|HN2C12FT Vceo (V) = 10/10 ;; Ic (mA) = 15/15 ;; PC
(mW) = 200 ;; .hFE = - ;; .fT(Typ.) (GHz) = 10/10 ;; NF (Typ.) (dB) = - ;; Contents = 2SC5096/2SC5096 ;; Package = TU6 ;; Application = Lna Buff Amp
|HN2C12FU Vceo (V) = 10 ;; Ic (mA) = 15 ;; PC
(mW) = 200 ;; .hFE = 50 to 160 ;; .fT(Typ.) (GHz) = 10 ;; NF (Typ.) (dB) = 1.8 ;; Contents = 2SC5094 X 2 ;; Package = US6 ;; Application = VHF/uhf Low Noise Amp
|HN2C13FT Package = TU6 ;; Application = VHF/uhf Lna|
|HN2D01F Ultra High Speed Silicon Epitaxial Planar Type Diode|
|HN2S01F Cell Delay of ND2 (FO=1) = ;; Cell Delay of ND2 (FO=5) = ;; Power Dissipation of ND2 (FO=1) = ;; Leakage Current of ND2 (Vdd=1.5V) = ;; Threshold Voltage = ;; Additional Information =|
|HN2V02H VR (v) = 16 ;; Ir (nA) = 20 ;; CT(1) (pF) = 435 to 540 ;; CT(2) (pF) = 19.9 to 26.7 ;; CT(1)/CT(2) = - ;; .rs(Typ.) Ohms = - ;; Package = FM8 ;; Application = am Tuning|
|HN3B01F PNP Epitaxial Type ( Audio Frequency General Purpose Amplifier Applications )|
1R5GH45 : Fast Recovery Rectifier ( Switching Type Power Supply Applications )
2SC2878 : Transistor ( For Muting And Switching Applications )
TA48015F : 1.5 V Three-terminal Low Dropout Voltage Regulator with Output Current of 1 A
TC55257APL-85 : 32,768-word BY 8-bit Static RAM
TLP801A : Infrared LED + Phototransistor
TMP19A43FD : 32-bit RISC Microprocessor
2SC5233_07 : Silicon NPN Epitaxial Type (PCT Process)
TC74HC652AP_07 : Synchronous Presettable 4-bit Binary Up/down Counter with Output Register
TB6555FLG(EL) : Pmic - Motor And Fan Controllers, Driver Integrated Circuit (ics) Cut Tape (CT) 600mA 2.7 V ~ 5.5 V; IC DRIVER DUAL BRIDGE 36QON Specifications: Applications: DC Motor Driver, H Bridge ; Number of Outputs: 2 ; Voltage - Supply: 2.7 V ~ 5.5 V ; Voltage - Load: 2.2 V ~ 13.5 V ; Current - Output: 600mA ; Operating Temperature: -20°C ~ 85°C ; Package / Case: 36-VFQFN Exposed Pad ; Packaging: Cut Tape (CT) ; Lead Free Status: Lead
TC74LCX16245(EL,F) : Logic - Buffers, Drivers, Receivers, Transceiver Integrated Circuit (ics) Buffer/Line Driver, Non-Inverting Cut Tape (CT) 24mA, 24mA 2 V ~ 3.6 V; IC BUS BUFF 16BIT N-INV 48TSSOP Specifications: Logic Type: Buffer/Line Driver, Non-Inverting ; Package / Case: 48-TFSOP (0.240", 6.10mm Width) ; Packaging: Cut Tape (CT) ; Mounting Type: Surface Mount ; Number of Bits per Element: 4 ; Number of Elements: 4 ; Operating Temperature: -40°C ~ 85°C ; Voltage - Supply: 2 V ~ 3.6 V ; Cu
854680 : = Filter - STD Low-loss ;; Frequency (MHz) = 70 ;; Bandwidth (MHz) = 40 ;; Insertion Loss (dB) = 22.0 Max ;; Modes of Operation = se ;; Package (mm) = 13.3 X 6.5.
AA028P1-00 : 27 29 GHZ GAAS Mmic Power Amplifier. Single Bias Supply Operation V) 22 dBm Typical P1 dB Output Power at 28 GHz 13.5 dB Typical Small Signal Gain 0.25 µm Ti/Pd/Au Gates 100% On-Wafer RF and DC Testing 100% Visual Inspection MT 2010 Dimensions indicated in mm. All DC (V) pads are 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Skyworks' two-stage balanced Ka band.
ASD501V : Surface Mount Small Signal Type. Extermely thin package Low stored charge Majority carrier conduction Case : Molded plastic, 0805 Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.000159 ounce, 0.0045 gram PARAMETER Repetitive peak reverse voltage Continuous reverse voltage Mean rectifying current.
AV131-315 : HIP3 Variable Attenuator For Amps. 23 dB Attenuation Range 1.5 dB Insertion Loss, 1.5 SWR 012 V Control Voltage 43 dBm IP3 Small Footprint LGA Package Designed for AMPS and GSM Base Stations The is a voltage controlled variable attenuator from Skyworks' series of HIP3TM components. It is specifically designed and specified for use as a wide dynamic range low distortion attenuator for AMPS.
BX9133 : Frequency (MHz) = 10 - 2000 ;; Gain (Typ/Min) (dB) = 9.5 / 8 ;; Noise Figure (Typ/Max) (dB) = 4.5 / 5.5 ;; P1dB Comp Point (Typ/Min) (dBm) = +3 / +2 ;; 3rd Order Intercept (Typ) (dBm) = +16 ;; 2nd Order Intercept (Typ) (dBm) = +23 ;; DC Power (Typ) (V/mA) = +15 / +14 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack.
CHA2395-99F : Operational Frequency = 36-40GHz ;; Noise Figure = 3dB ;; Gain = 28dB ;; Gain Flatness = 1dB ;; Gain Control Range = - ;; P-1dB = 10dBm ;; Case = Die.
D1217UK : Purchase Online = ;; Package = DD ;; Impedance Calculator = ;; Operating Voltage (V) = 12.5 ;; Power Output (W) = 40 ;; Minimum Efficiency = 50 ;; Gain = 10 ;; Test Frequency (MHz) = 400 ;; Configuration = Push-pull ;; Application Range = 1-500MHz ;; Active Fet Configuration = 2+2 ;; BVDSS (V) = 40.
DSS-327 : Surface Mount Two-way Power Divider, 5 - 1000 MHZ. Fully Hermetic Package Low Loss: 0.3 dB Typical Amplitude Balance: 0.05 dB Typical Impedance: 50 Ohms Nominal Maximum Power Rating or Input Power: 1 Watt Max. Internal Load Dissipation: 0.05 Watts Max. MIL-STD-202 Screening Available A Power Divider is ideally a loss less reciprocal device which can also perform vector summation of two or more signals.
FLL357ME : FET. L-band Medium & High Power GAAS Fets. L-Band Medium & High Power GaAs FET High Output Power: P1dB=35.5dBm (Typ.) High Gain: G1dB=11.5dB (Typ.) High PAE: add=46% (Typ.) Proven Reliability Hermetically Sealed Package The is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance.
HN3C11F : Hybrid Transistors. Vceo (V) = 10 ;; Ic (mA) = 40 ;; PC(mW) = 300 ;; .hFE = 50 to 160 ;; .fT(Typ.) (GHz) = 10 ;; NF (Typ.) (dB) = 1.7 ;; Contents = 2SC5089 X 2 ;; Package = SM6 ;; Application = VHF/uhf Low Noise Amp.
NJG1552F : GaAs MMICs. 1.5GHz/1.9GHz Mixer GAAS Mmic. n GENERAL is a mixer GaAs MMIC featured low power consumption, high conversion gain and low noise figure. This mixer includes a local amplifier, and ideally suitable for 1.5/1.9Hz band digital mobile phone and PHS handsets. The very small MTP package is adopted. n PACKAGE OUTLINE NJG1552F n l Low voltage operation l Low current consumption l High conversion.
RF2721 : Modulators/Demodulators. Quadrature Demodulator. Typical Applications UHF Digital and Analog Receivers Digital Communication Systems Commercial and Consumer Systems Portable Battery-Powered Equipment Spread-Spectrum Communication Systems General Purpose Frequency Conversion The is a monolithic integrated quadrature demodulator intended for use in digital mobile radio receivers. In this application.
TIM0910-10 : X, Ku-Band Power GaAs IMFETs. Frequency Band (GHz) = 9.5-10.5 ;; P1dB (dBm) = 40.5 ;; G1dB (dB) = 6.0 ;; P.A.E. (%) Typ. = 23 ;; VDS (V) = 9 ;; Ids (A) Typ. = 4.0 ;; IM3 (dBc) Typ. = - ;; RTH ( C/W) Typ. = 2.0.
SL2610 : Wide Dynamic Range Image Reject MOPLL The SL2610 is a multi band RF mixer oscillator with image reject and on-board frequency synthesizer. It is intended primarily for application in all band terrestrial tuners and requires a minimum external component count. It contains all elements required for RF downconversion to a standard IF with the exception.
PE4150 : UltraCMOS? Low Frequency Passive Mixer With Integrated LO Amplifier The PE4150 is an ultra-high linearity Quad MOSFET mixer with an integrated LO amplifier. The LO amplifier allows for LO drive levels of less than 0dBm to produce IIP3 values similar to a Quad MOSFET Array driven with a 15dBm LO drive. The PE4150 operates with differential signals at the RF and IF ports.
MAX2209 : RF Power Detector The MAX2209 is a wideband (800MHz to 2GHz) RF power detector. It takes an RF signal from the directional coupler at the input, and outputs a DC voltage proportional to the RF peak voltage. The change in output voltage versus temperature is very repeatable from part to part and enables a lookup table based on nominal behavior, minimizing.
HMC941LP4 : 0.5 DB LSB 5-Bit Digital Attenuator SMT, 0.1 - 33 GHz The HMC941LP4 & HMC941LP4E are broadband 5-bit GaAs IC digital attenuators in low cost leadless surface mount packages. Covering 0.1 to 33.0 GHz, the insertion loss is less than 4 dB typical. The attenuator bit values are 0.5 (LSB), 1, 2, 4, 8, for a total attenuation of 15.5 dB. Attenuation accuracy.