|Category||RF & Microwaves|
|Description||Package = TU6 ;; Application = VHF/uhf Lna|
|Company||Toshiba America Electronic Components, Inc.|
|Datasheet||Download HN9C07FT datasheet
|Some Part number from the same manufacture Toshiba America Electronic Components, Inc.|
|HN9C14FT Vceo (V) = 12/12 ;; Ic (mA) = 30/30 ;; PC
(mW) = 200 ;; .hFE = - ;; .fT(Typ.) (GHz) = 7/7 ;; NF (Typ.) (dB) = - ;; Contents = 2SC5066/2SC5066 ;; Package = TU6 ;; Application = Vco
(osc & Buff Amp)
|HN9C19FT Package = TU6 ;; Application = Vco (OSC & Buff Amp)|
|HN9C22FT Vceo (V) = 10/12 ;; Ic (mA) = 15/30 ;; PC
(mW) = 200 ;; .hFE = - ;; .fT(Typ.) (GHz) = 10/7 ;; NF (Typ.) (dB) = - ;; Contents = 2SC5096/2SC5066 ;; Package = TU6 ;; Application = Vco
(osc & Buff Amp)
|JDP2S01E VR (v) = 30 ;; Ir (µA) = 0.1 ;; VF(v) = 0.9 ;; CT(pF) = 0.65 ;; .rs(Typ.) Ohms = 0.65 ;; Package = Esc ;; Application = Single
|JDP2S01T VR (v) = 30 ;; Ir (µA) = 0.1 ;; VF(v) = 0.87 ;; CT(pF) = 0.65 ;; .rs(Typ.) Ohms = 0.65 ;; Package = Tesc ;; Application = Single
2SD2553 : NPN Triple Diffused Mesa Type ( Horizontal Deflection Output For High Resolution Display, Color Tv. High Speed Switching Applications )
TB31202FN : Dual or Single = Dual ;; Features = Integer - N ;; Power Supply V = 2.0 ~ 5.5 ;; Ima = 8 ;; Input FMHZ = 200 ~ 520 ;; Operating Freq-mhz = 5 ~ 25 ;; Sensitivity DBµmV = 93 ~ 107 ;; Package = SSOP16 ;; Production Status = MP
TD62650F : 5v Power Supply & Supply Monitoring+communications ic
TF1107 : Solid State I/o Interface Module ( DC Input Module )
TMP87CH47U : TLCS-870 Series ROM Size = Null ;; RAM Size = Null ;; Supply Voltage = 1.8-4.0 ;; I/o Count = Null ;; Unique Features = Null ;; Additional Information = More Info
TPCS8104 : Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
TC7S00F(TE85L,F) : Logic - Gate And Inverter Integrated Circuit (ics) NAND Gate Cut Tape (CT) 2.6mA, 2.6mA 2 V ~ 6 V; IC GATE NAND 2INP 74HC00 5-SSOP Specifications: Number of Circuits: 1 ; Package / Case: 6-LSOP (0.063", 1.60mm Width) 5 Leads ; Logic Type: NAND Gate ; Packaging: Cut Tape (CT) ; Mounting Type: Surface Mount ; Number of Inputs: 2 ; Current - Output High, Low: 2.6mA, 2.6mA ; Operating Temperature: -40°C ~ 85°C ; Voltage - Supply: 2
2SC2703-Y(TE6,F,M) : Transistor (bjt) - Single Discrete Semiconductor Product 1A 30V 900mW NPN; TRANSISTOR NPN 30V 1A TO-92 Specifications: Transistor Type: NPN ; Voltage - Collector Emitter Breakdown (Max): 30V ; Current - Collector (Ic) (Max): 1A ; Power - Max: 900mW ; DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 2V ; Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA ; Frequency - Transition: 150MHz ; Current -
10310-3 : = 90° / 180° Hybrid Couplers ;; Size LXWXH = 2.0 X 1.45 X 0.37" ;; Packaging = Aluminum Cased ;; Frequency MHZ = 2000-11000 ;; Power Handling Watts = 80.
2N3890 : Phase Control SCR 175 Amoeres Average 1200 Volts.
AH115 : . MHz +28 dBm P1dB +43 dBm Output 14 dB Gain @ 1960 MHz Single Positive Supply (+5 V) MTTF >100 Years SOIC-8 SMT Package The is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance over a broad frequency range with +43 dBm OIP3 and +28 dBm of compressed 1-dB power and is housed.
BGA6589 : Mmic Wideband Medium Power Amplifier.
D1004UK : Purchase Online = ;; Package = DT ;; Impedance Calculator = ;; Operating Voltage (V) = 28 ;; Power Output (W) = 80 ;; Minimum Efficiency = 50 ;; Gain = 16 ;; Test Frequency (MHz) = 175 ;; Configuration = Single-ended ;; Application Range = 1-175MHz ;; Active Fet Configuration = 4 ;; BVDSS (V) = 70.
MAAPSS0006 : LNAs. 824-849 MHZ Cellular Cdma/amps Power Amplifier. High Gain 2-stage HBT Amplifier Single Supply, 3V Operation Dual Mode Operation 29 dBm Linear Output Power 31.5 dBm CW Output Power High Efficiency Low Quiescent Current Miniature FQFP-N 4mm Plastic Package M/A-COM's is a high power, high efficiency linear power amplifier in a miniature FQFP-N 4mm plastic package. The MAAPSS0006 includes a 2-stage amplifier.
MH205 : . +33 dBm 915 MHz 120 MHz Low-side LO configuration +17 dBm Drive Level Low Cost SOIC-8 Package No External Bias Required The is a passive GaAs MESFET mixer that provides high dynamic range performance in a low cost SOIC-8 package. WJ's MH205 uses patented techniques to realize +33 dBm Input an LO drive level of +17 dBm when used in a simple application.
P35-4150 : 2-18GHz 5.0dB Gain Block. The is a high performance monolithic broadband amplifier designed for use in a wide range of applications including telecommunications, instrumentation and electronic warfare. The amplifier gives typically 5.0dB gain over the frequency range 18GHz. On chip input and output blocking capacitors simplify assembly and allow the amplifiers to be cascaded.
PM2117 : Single Supply Power Amps. Richardson Electronics, Ltd. 40W267 Keslinger Road PO Box 393 LaFox, IL 60147-0393 The s of this item are subject to change without notice and Richardson Electronics assumes no liability for the use of the information contained herein. ©2000 Richardson Electronics, Ltd. 5/00 .
RX5002 : Frequency = 418.0 ;; = Receiver, Ash, 115.2 KBPS. Designed for Short-Range Wireless Control and Data Communications Supports RF Data Transmission Rates to 115.2 kbps 3 V, Low Current Operation plus Sleep Mode Stable, Easy to Use, Low External Parts Count The RX5002 hybrid receiver is ideal for short-range wireless control and data applications where robust operation, small size, low power consumption.
SPA-2318 : 1700-2200 MHZ 1 Watt Power Amp With Active Bias. Sirenza Microdevices' is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically.
tga1073b : 27- 32 GHZ 0.7 Watt Power Amplifier. 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout (7V) -38 dBc @ 18 dBm SCL Bias 420 mA Chip Dimensions x 2.15mm The TriQuint is a three stage HPA MMIC design using TriQuint's proven 0.25 um Power pHEMT process. The TGA1073B is designed to support a variety of millimeter wave applications including point-to-point digital radio.
TGA1319A-EPU : = ka Band Lna ;; Freq(GHz) = 21-27 ;; Power(dBm) = 12 ;; Gain(dB) = 19 ;; Nf/pae = 2 ;; +V = 3 ;; IQ(mA) = 45 ;; Status = Standard, Space.
TIM1414-18L : X, Ku-Band Power GaAs IMFETs. Frequency Band (GHz) = 14.0-14.5 ;; P1dB (dBm) = 42.0 ;; G1dB (dB) = 5.0 ;; P.A.E. (%) Typ. = 28 ;; VDS (V) = ;; Ids (A) Typ. = ;; IM3 (dBc) Typ. = -25 ;; RTH ( C/W) Typ. = 1.8.
BLF369 : VHF power LDMOS transistor A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band..
ABA3101 : Low Noise Amplifiers The ABA3101 is a monolithic IC intended for use in applications requiring high linearity, such as Cellular Telephone Base Station Driver Amplifiers, CATV Fiber Receiver and Distribution Amplifiers, CATV Drop Amplifiers, CATV Set Top Boxes, and Home Gateways. Offered in a modified 16 lead surface mount SOIC package with a heat slug,.
SKY33107-360LF : BAW 2.495 – 2.690 GHz WiMAX Pass / 2.400 – 2.473 GHz WiFi Reject Filte The SKY33107 is a bulk acoustic wave (BAW) high pass filter in a 3 x 3 mm package. This filter has very low inband insertion loss, excellent out-of-band rejection in the 2.4 GHz WLAN band and very low input and output return loss. NEW! Skyworks offers lead (Pb)-free, RoHS (Restriction.
MCP6V31 : Operational Amplifiers The MCP6V31/1U family of operational amplifiers provides input offset voltage correction for very low offset and offset drift. These are low power devices, with a gain bandwidth product of 300 kHz. They are unity gain stable, have no 1/f noise, and provide superior CMRR and PSRR performance. These products operate with a single.