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Details, datasheet, quote on part number:RN1441
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Datasheet text preview:
RN1441~RN1444
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1441,RN1442,RN1443,RN1444
Muting And Switching Applications
l High emitter-base voltage: VEBO = 25V (min) l High reverse hFE: reverse hFE = 150 (typ.) (VCE = -2V, IC = -4mA) l Low on resistance: RON = 1 (typ.) (IB = 5mA) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process Unit in mm
Equivalent Circuit
JEDEC EIAJ TOSHIBA Weight: 0.012g
TO-236MOD SC-59 2-3F1A
Maximum Ratings (Ta = 25°C) °
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol V CBO V CEO VEBO IC PC Tj Tstg Rating 50 20 25 300 200 150 -55~150 Unit V V V mA mW °C °C
Marking
Type No. RN1441 RN1442 RN1443 RN1444 HFE classification A KA LA NA CA B KB LB NB CB
1
2001-06-07
RN1441~RN1444
Electrical Characteristics (Ta = 25°C) °
Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance RN1441 Input resistor RN1442 RN1443 RN1444 R1 Symbol I CBO IEBO hFE (Note) VCE (sat) fT Cob Test Circuit Test Condition VCB = 50V, IE = 0 VEB = 25V, IC = 0 VCE = 2V, IC = 4mA IC = 30mA, IB = 3mA VCE = 6V, IC = 4mA VCB = 10V, IE = 0, f = 1MHz Min Typ. Max 0.1 0.1 1200 0.1 V MHz pF Unit µA µA
200
30 4.8 5.6 10 22 2.2
3.9 7 15.4 1.54
7.3 13 28.6 2.86
k
Note : hFE classification
A: 200~700
B: 350~1200
2
2001-06-07
RN1441~RN1444
3
2001-06-07
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