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Details, datasheet, quote on part number:RN1511
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Datasheet text preview:
RN1510,RN1511
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1510,RN1511
Unit: mm
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l Including two devices in SMV l (super mini type with 5 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2510~RN2511
Equivalent Circuit
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol V CBO V CEO VEBO IC PC * Tj Tstg Rating 50 50 5 100 300 150 -55~150 Unit V V V mA mW °C °C
JEDEC EIAJ TOSHIBA Weight: 0.014g
2-3L1A
Equivalent Circuit
(Top View)
*:
Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Input resistor RN1510 RN1511 Symbol I CBO IEBO hFE VCE (sat) fT Cob R1 Test Circuit Test Condition VCB = 50V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1mA IC = 5mA, IB = 0.25mA VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz Min 120 3.29 7 Typ. 0.1 250 3 4.7 10 Max 100 100 700 0.3 6 6.11 13 V MHz pF kW Unit nA nA
1
2001-06-13
RN1510,RN1511
(Q1, Q2 Common)
2
2001-06-13
RN1510,RN1511
(Q1, Q2 Common)
3
2001-06-13
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