|
Details, datasheet, quote on part number:RN1544
| |
Datasheet text preview:
RN1544
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1544
For use in Muting and Switching Applications
· · Emitter-base voltage is high: VEBO = 25 V (max) Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Unit: mm
Equivalent Circuit
C hFE classification Marking A 44A B 44B
B
R1
E
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VE B O IC PC (Note1) Tj Tstg Rating 50 20 25 300 300 150 -55~150 Unit V V V mA mW °C °C Q1 Q2
JEDEC JEITA TOSHIBA
2-3L1A
Weight: 0.014g (typ.)
Equivalent Circuit
(top view)
5 4
Note1: Total rating
1
2
3
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Input resistor Symbol ICBO IEBO Test Condition VCB = 50 V, IE = 0 VEB = 25 V, IC = 0 Min 200 1.54 Typ. 30 2.2 Max 100 100 1200 0.1 7 2.86 V MHz pF k Unit nA nA
hFE (Note2) VCE = 2 V, IC = 4 mA VCE (sat) fT Cob R1 IC = 10 mA, IB = 1 mA VCE = 6 V, IC = 4 mA VCB = 10 V, IE = 0, f = 1 MHz
Note2: hFE classification
A: 200~700, B: 350~1200
1
2004-03-17
RN1544
Q1,Q2 Common
2
2004-03-17
RN1544
Q1,Q2 Common
COLLCTOR POWER DISSIPATION PC (mW)
400
PC* Ta
300
200
100
0 0
50
100
150
AMBIENT TEMPERATURE
Ta (°C)
*: Total rating
3
2004-03-17
|
|
