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Details, datasheet, quote on part number:RN1610
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Datasheet text preview:
RN1610,RN1611
TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)
RN1610,RN1611
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l Including two devices in SM6 (super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2610, RN2611 Unit: mm
Equivalent Circuit
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) °
Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol V CBO V CEO VEBO IC P C* Tj Tstg Rating 50 50 5 100 300 150 -55~150 Unit V V V mA mW °C °C
JEDEC EIAJ TOSHIBA Weight: 0.015g
2-3N1A
*
Total rating
Equivalent Circuit (Top View)
1
2001-06-07
RN1610,RN1611
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) °
Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Translation frequency Collector output capacitance Input resistor RN1610 RN1611 Symbol I CBO IEBO hFE VCE (sat) fT Cob R1 Test Circuit Test Condition VCB = 50V, IE = 0 VEB = 50V, IC = 0 VCE = 50V, IC = 1mA IC = 5mA, IB = 0.25mA VCE = 10V, IC = 5mA VCB = 10V, IE = 0, f = 1MHz Min 120 3.29 7 Typ. 0.1 250 3 4.7 10 Max 100 100 700 0.3 6 6.11 13 Unit nA nA V MHz pF k
(Q1, Q2 Common)
2
2001-06-07
RN1610,RN1611
(Q1, Q2 Common)
3
2001-06-07
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