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Details, datasheet, quote on part number:RN2510
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Datasheet text preview:
RN2510,RN2511
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2510,RN2511
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l Including twodevices in SMV (super mini type with 5 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1510, RN1511 Unit: mm
Equivalent Circuit
JEDEC EIAJ TOSHIBA Weight: 0.014g
2-3L1A
Maximum Ratings (Ta = 25°C) °
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol V CBO V CEO VEBO IC P C* Tj Tstg Rating -50 -50 -5 -100 300 150 -55~150 Unit V V V mA mW °C °C
* : Total rating
Equivalent Circuit (Top View)
1
2001-06-07
RN2510,RN2511
Electrical Characteristics (Ta = 25°C) °
Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Translation frequency Collector output capacitance Input resistor RN2510 RN2511 Symbol I CBO IEBO hFE VCE (sat) fT Cob R1 Test Circuit Test Condition VCB = -50V, IE = 0 VEB = -5V, IC = 0 VCE = -5V, IC = -1mA IC = -5mA, IB = -0.25mA VCE = -10V, IC = -5mA VCB = -10V, IE = 0, f = 1MHz Min 120 3.29 7 Typ. -0.1 250 3 4.7 10 Max -100 -100 400 -0.3 6 6.11 13 Unit nA nA V MHz pF k
2
2001-06-07
RN2510,RN2511
(Q1, Q2 Common)
3
2001-06-07
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