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Details, datasheet, quote on part number:RN2609
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Datasheet text preview:
RN2607~RN2609
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2607,RN2608,RN2609
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l Including two devices in SM6 (super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1607~RN1609 Unit in mm
Equivalent Circuit andBias Resistor Values
Type No. RN2607 RN2608 RN2609 R1 (k) 10 22 47 R2 (k) 47 47 22
JEDEC EIAJ TOSHIBA Weight: 0.015g
2-3N1A
Eauivalent Circuit (Top View) Maximum Ratings (Ta = 25°C) °
Characteristic Collector-base voltage Collector-emitter voltage RN2607~RN2609 RN2607 Emitter-base voltage RN2608 RN2609 Collector current Collector power dissipation Junction temperature Storage temperature range IC P C* Tj Tstg VEBO Symbol V CBO V CEO Rating -50 -50 -6 -7 -15 -100 300 150 -55~150 mA mW °C °C V Unit V V
* Total rating
1
2001-06-05
RN2607~RN2609
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) °
Characteristic Collector cut-off current RN2607~RN2609 RN2607 Emitter cut-off current RN2608 RN2609 RN2607 DC current gain RN2608 RN2609 Collector-emitter saturation voltage RN2607~RN2609 RN2607 Input voltage (ON) RN2608 RN2609 RN2607 Input voltage (OFF) RN2608 RN2609 Translation frequency Collector output capacitance RN2607~RN2609 RN2607~RN2609 RN2607 Input resistor RN2608 RN2609 RN2607 Resistor ratio RN2608 RN2609 R1/R2 R1 fT Cob VI (OFF) VI (ON) VCE (sat) hFE IEBO Symbol I CBO I CEO Test Circuit VCE = -10V, IC = -5mA VCB = -10V, IE = 0 f = 1MHz VCE = -5V, IC = -0.1mA VCE = -0.2V, IC = -5mA IC = -5mA, IB = -0.25mA VCE = -5V, IC = -10mA Test Condition VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VEB = -7V, IC = 0 VEB = -15V, IC = 0 Min -0.081 -0.078 -0.167 80 80 70 -0.7 -1.0 -2.2 -0.5 -0.6 -1.5 7 15.4 32.9 0.191 0.421 1.92 Typ. -0.1 200 3 10 22 47 0.213 0.468 2.14 Max -100 -500 -0.15 -0.145 -0.311 -0.3 -1.8 -2.6 -5.8 -1.0 -1.16 -2.6 6 13 28.6 61.1 0.232 0.515 2.35 k MHz pF V V V mA Unit nA nA
2
2001-06-05
RN2607~RN2609
(Q1, Q2 Common)
3
2001-06-05
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