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Details, datasheet, quote on part number:RN2611
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Datasheet text preview:
RN2610,RN2611
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2610,RN2611
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l Including twodevices in SM6 (super mini type with 6 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1610~RN1611 Unit in mm
Equivalent Circuit
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol V CBO V CEO VEBO IC P C* Tj Tstg Rating -50 -50 -5 -100 300 150 -55~150 Unit V V V mA mW °C °C
JEDEC EIAJ TOSHIBA Weight: 0.015g
2-3N1A
* Total rating
Equivalent Circuit (Top View)
1
2001-06-05
RN2610,RN2611
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Translation frequency Collector output capacitance Input resistor RN2610 RN2611 Symbol I CBO IEBO hFE VCE (sat) fT Cob R1 Test Circuit Test Condition VCB = -50V, IE = 0 VEB = -5V, IC = 0 VCE = -5V, IC = -1mA IC = -5mA, IB = -0.25mA VCE = -10V, IC = -5mA VCB = -10V, IE = 0, f = 1MHz Min 120 3.29 7 Typ. -0.1 200 3 4.7 10 Max -100 -100 400 -0.3 6 6.11 13 Unit nA nA V MHz pF k
2
2001-06-05
RN2610,RN2611
(Q1, Q2 Common)
3
2001-06-05
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