|Category||Memory => SRAM|
|Description||Density = 4M ;; Organization = 256Kx16 ;; VDD = 5V ;; Speed = 85,100ns ;; Comment = Low Power SRAM ;; Status = Eol, Use A-version ;; Additional Information =|
|Company||Toshiba America Electronic Components, Inc.|
|Datasheet||Download TC554161I-L datasheet
|Some Part number from the same manufacture Toshiba America Electronic Components, Inc.|
|TC554161I-V Density = 4M ;; Organization = 256Kx16 ;; VDD = 5V ;; Speed = 85,100ns ;; Comment = Low Power SRAM ;; Status = Eol, Use A-version ;; Additional Information =|
|TC5564AFL-15 8,192 Word X 8 Bit CMOS Static RAM|
|TC5565APL 65,536 Bit Static Random Access Memory Organized as 8,192 Words BY 8 Bits Using CMOS Technology|
|TC558128AJ 131,072-word BY 8-bit CMOS Static RAM|
|TC558128B Density = 1Mb ;; Organization = 128Kx8 ;; VDD = 12,15 ;; Speed = Soj, Tsop ;; Comment = 5 ;; Status = ;; Additional Information =|
|TC558128BFT 1m CMOS Static RAM: 128kx8|
|TC558128BI Density = 1Mb ;; Organization = 128Kx8 ;; VDD = 12,15 ;; Speed = Soj, Tsopii ;; Comment = 5 ;; Status = Industrial Temp ;; Additional Information =|
|TC558128BJ 131,072-word BY 8-bit Digital CMOS Static RAM|
|TC5581BFTI 1m CMOS Static RAM: 128kx8|
|TC55FL836FF-75 CMOS Static RAM|
|TC55NEM208A Organization = 512Kx8 ;; VDD(V) = 5 ;; Package = 32-pin Sop, Tsopii ;; Functionlity = Full CMOS ;; Speed(ns) = 55, 70 ;; Comment =|
|TC55NEM216AFTN Organization = 256Kx16 ;; VDD(V) = 5 ;; Package = 54pin Tsop ii ;; Functionlity = Full CMOS ;; Speed(ns) = 55, 70 ;; Comment =|
|TC55NEM216ASTV Organization = 256Kx16 ;; VDD(V) = 5 ;; Package = 44pin Tsop ii ;; Functionlity = Low Voltage Tolerant ;; Speed(ns) = 55, 70 ;; Comment =|
|TC55V020 Density = 2M ;; Organization = 256Kx8 ;; VDD = 3V ;; Speed = 70,85,100 ;; Comment = Full CMOS ;; Status = Not Recommended For Design ;; Additional Information =|
|TC55V040 Density = 512Kx8 ;; Organization = 70,85 ;; VDD = 40-pin Tsopi ;; Speed = Full CMOS ;; Comment = 4Mb ;; Status = ;; Additional Information =|
|TC55V040A Organization = 512Kx8 ;; VDD(V) = 3 ;; Package = 40-pin Tsopi ;; Functionlity = Full CMOS ;; Speed(ns) = 55, 70 ;; Comment = Recommend Shrink Parts|
|TC55V1001 1mb Static RAM: 128kx8|
|TC55V1001A Density = 1M ;; Organization = 128Kx8 ;; VDD = 3V ;; Speed = 85,100ns ;; Comment = ;; Status = Eol Dec.'01 ;; Additional Information =|
TA78DM05S : Low Dropout Voltage Regulator
TC55V1001ATR-10 : Density = 1M ;; Organization = 128Kx8 ;; VDD = 3V ;; Speed = 85,100ns ;; Comment = ;; Status = Eol Dec.'01 ;; Additional Information =
TC55V1664FT-15 : 1mb CMOS Static RAM: 64kx16
TD62505PG : 7ch Single Driver
TA8532F : Battery Charger IC
TD62705 : 6CH High-voltage Source Driver
2SJ512_06 : Silicon P Channel MOS Type Chopper Regulator, Dc−dc Converter and Motor Drive Applications
TC74HC244AFW(ELP) : Logic - Buffers, Drivers, Receivers, Transceiver Integrated Circuit (ics) Buffer/Line Driver, Non-Inverting Tape & Reel (TR) 7.8mA, 7.8mA 2 V ~ 6 V; IC BUFF/DVR DUAL N-INV 20SOL Specifications: Logic Type: Buffer/Line Driver, Non-Inverting ; Package / Case: 20-SOIC (0.295", 7.50mm Width) ; Packaging: Tape & Reel (TR) ; Mounting Type: Surface Mount ; Number of Bits per Element: 4 ; Number of Elements: 2 ; Operating Temperature: -40°C ~ 85°C ; Voltage - Supply: 2 V ~ 6 V
CUS06(TE85L,Q) : Diodes, Rectifier - Single Discrete Semiconductor Product 1A 20V Schottky; DIODE SCHOTTKY 20V 1A USFLAT Specifications: Diode Type: Schottky ; Voltage - DC Reverse (Vr) (Max): 20V ; Current - Average Rectified (Io): 1A ; Voltage - Forward (Vf) (Max) @ If: 470mV @ 1A ; Reverse Recovery Time (trr): - ; Current - Reverse Leakage @ Vr: 30µA @ 20V ; Speed: Fast Recovery =< 500ns,>200mA (Io) ; Mounting T
TCK303G,LF : Power Switch ICs - Power Distribution Load Switch IC Toshiba TCK3xx Single Output Power Multiplexer ICs are single output multiplexer load switch ICs with overvoltage protection and low switch ON resistance. Each of these devices also have high output current and wide input voltage operation from 2.3 up to 36V (28V for TCK302 & TCK303). These h
A29010 : Flash 1Mb x8. ± 10% for read and write operations n Access times: - 55/70/90 (max.) n Current: 20 mA typical active read current 30 mA typical program/erase current 1 µA typical CMOS standby n Flexible sector architecture 32 KbyteX4 sectors - Any combination of sectors can be erased - Supports full chip erase - Sector protection: A hardware method of protecting sectors.
ACT-F1M32T-080F14C : Act-f1m32 High Speed 32 Megabit Boot Block Flash Multichip Module. ACTF1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module MCM Package s Overall Configuration s +5V Operation (Standard) or +3.3V (Consult Factory) s Access Times 80, 100 and ( 5V VCC) or +12V Programing s Erase/Program Cycles q 100,000 Commercial q 10,000 Military and Industrial s Sector Architecture (Each Die) q One 16K Protected Boot Block.
BS616LV2013 : SRAM. Very low operation voltage ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current High speed access time -70 70ns (Max.) at Vcc -10 100ns (Max.) at Vcc = 3.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully.
EBD11ED8ABFB : . The is 128M words × 72 bits, 2 ranks Double Data Rate (DDR) SDRAM unbuffered module, mounting 18 pieces of 512M bits DDR SDRAM sealed in TSOP package. Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 2 bits prefetch-pipelined architecture. Data strobe (DQS) both for read.
EBE11ED8ABFA : 240-pin Unbuffered Dimm. The is 128M words × 72 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA) package. Read and write operations are performed at the cross points of the CK and the /CK. This highspeed data transfer is realized by the 4 bits prefetchpipelined architecture. Data strobe (DQS and /DQS) both for read.
HM628511HCJP-12 : Fast SRAM. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.
HYM72V32M656BLT6-P : ->SO DIMM. based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh The HYM72V32M656B(L)T6 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx16bits CMOS Synchronous DRAMs 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package a 144pin glass-epoxy printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors.
HYS64T64020KM : Double-data-rate-two Sdram Micro-dimm. The information in this document is subject to change without notice. Edition 2004-06 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.
LH28F008SCR-L85 : 8M Smart Voltage Flash Memory.
M364C1600BJ0 : Buffered DIMM. = M364C1600BJ0 16Mx64 DRAM Dimm Using 16Mx4,4K&8K Refresh,5V ;; Density(MB) = 128 ;; Organization = 16Mx64 ;; Mode = Fast Page ;; Refresh = 4K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 168 ;; Component Composition = (16Mx4)x16+Drive ICx2 ;; Production Status = Eol ;; Comments = Buffered.
MB84VA2106 : 16m ( X16 ) Flash Memory & 1m ( X 8 ) Static RAM. Power supply voltage 3.6 V High performance 100 ns maximum access time Operating Temperature to +85°C FLASH MEMORY Minimum 100,000 write/erase cycles Sector erase architecture One 8 K word, two 4 K words, one 16 K word, and thirty one 32 K words. Any combination of sectors can be concurrently erased. Also supports full chip erase. Boot Code Sector Architecture.
SST31LF021-70-4C-WH : Voltage = 3 to 3.6 ;; Density = 2Mb ;; Organization = 256Kb X 8 ;; Speed = 70 NS ;; Temp. = Commercial ;; Package = TSOP-1.
SST34HF1621 : 16 Mbit Concurrent Superflash + 2 / 4 Mbit SRAM Combomemory. 16 Mbit Concurrent SuperFlash Mbit SRAM ComboMemory Flash Organization: 1M x16 Dual-Bank Architecture for Concurrent Read/Write Operation 16 Mbit: 12 Mbit + 4 Mbit SRAM Organization: 2 Mbit: 4 Mbit: 256K x16 Single 2.7-3.3V Read and Write Operations Superior Reliability Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention.
TC55VZM216AFTI : SRAM - High Speed Asynch. Density = 4Mb ;; Organization = 256Kx16 ;; Speed (ns) = 8,10,12 ;; Package = Soj/tsop ;; Voltage (V) = 3.3 ;; Comments = Industrial Temp.
VG2617405DJ-5 : Desc = 4Mx4 5V ;; ACCESSTIME(ns) = 50/60 ;; (REFRESH) = Edo (2K) ;; PACKAGEPIN-WIDTH, Type = 24/26-300mil Soj.
W965L6ABN : SRAM. 2Mx16.
WF2M16 : Flash MCP. Organization = 2Mx16 ;; Speed (ns) = 90-150 ;; Volt = 5 ;; Package = 56 Csop ;; Temp = C,i,m,q ;;.
M36L0R7040T0 : 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package MULTI-CHIP PACKAGE 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory 1 die of 16 Mbit (1Mb x16) Pseudo SRAM SUPPLY VOLTAGE VDDF = VDDP = VDDQ = 1.7 to 1.95V VPP = 9V for fast program (12V tolerant) ELECTRONIC SIGNATURE.
IS61LP6432A : 64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM The ISSI IS61LP6432A/36A is a high-speed synchronous static RAM designed to provide a burstable, high-performance memory for high speed networking and communication applications. The IS61LP6432A is organized as 64K words by 32 bits and the IS61LP6436A is organized as 64K words by 36 bits. Fabricated.