Details, datasheet, quote on part number: TC5BV32ADC
PartTC5BV32ADC
CategoryMemory => ROM => EEPROM => Parallel
Description32mb (4mx8-bit) CMOS NAND E2PROM(4m Byte Smartmedia(tm))
CompanyToshiba America Electronic Components, Inc.
DatasheetDownload TC5BV32ADC datasheet
  
Some Part number from the same manufacture Toshiba America Electronic Components, Inc.
TC6371AF Host Bus Interface = Pci ;; Sdio Support = no ;; Card Interface = SD Memory Card or Smartmedia ;; Additional Information = More Info
TC6374AF Secure Digital Host Controllers (SDHC) Are The First Standalone Chips to Provide a Dedicated Hardware Interface For SD Memory, Smartmedia And Multimedia Cards And CAN be Integrated Into Laptops, Cell Phones,
TC6377AF Host Bus Interface = Standard Memory I/f (SRAM Like) ;; Sdio Support = no ;; Card Interface = SD Memory Card + SD or Smartmedia Card ;; Additional Information = More Info
TC6380AF Host Bus Interface = Standard Memory I/f (SRAM Like) ;; Sdio Support = Yes ;; Card Interface = SD Memory Card or Smartmedia ;; Additional Information = More Info
TC6384AF Secure Digital Host Controllers (SDHC) Are The First Standalone Chips to Provide a Dedicated Hardware Interface For SD Memory, Smartmedia And Multimedia Cards And CAN be Integrated Into Laptops, Cell Phones,
TC6387XB
TC6391XB Host Bus Interface = Standard Memory I/f (SRAM Like) ;; Sdio Support = Yes ;; Card Interface = SD Memory Card/sdio Card or Smartmedia or Compact Flash or Usb ;; Additional Information = More Info
TC6393XB Secure Digital Host Controllers (SDHC) Are The First Standalone Chips to Provide a Dedicated Hardware Interface For SD Memory, Smartmedia And Multimedia Cards And CAN be Integrated Into Laptops, Cell Phones,
TC74AC00 Quad 2-input NAND Gate
TC74AC00F
TC74AC00FN Function = Quad 2-input NAND Gate ;; Pins = 14
TC74AC02 Quad 2-input NOR GATE
TC74AC02F
TC74AC02FN Function = Quad 2-input NOR GATE ;; Pins = 14
TC74AC04 Hex Inverter
TC74AC04F
TC74AC04FN Function = Hex Inverter ;; Pins = 14
TC74AC05 Hex Inverter (open Drain)
TC74AC05F
TC74AC05FN Function = Hex Inverter (open Drain) ;; Pins = 14
TC74AC08 Quad 2-input And Gate
Same catergory

Am29LV160D : . 16 Megabit x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory s Single power supply operation Full voltage range: to 3.6 volt read and write operations for battery-powered applications Regulated voltage range: to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors s Manufactured 0.23 µm process.

HN29V51211T-50H : Memory. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

HYMD532M726L6 : 256 MB. 32Mx72 Bits Unbuffered DDR So-dimm. Hynix HYMD532M726(L)6-K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 32Mx72 high-speed memory arrays. Hynix HYMD532M726(L)6-K/H/L series consists of five 32Mx16 DDR SDRAM in 400mil TSOP II packages a 200pin glass-epoxy substrate. Hynix HYMD532M726(L)6-K/H/L.

K4D263238A : ->Graphics Memory. = K4D263238A 1M X 32Bit X 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe And DLL ;; Organization = 4Mx32 ;; Vdd/Vddq(V) = 2.5/2.5 ;; Speed(ns) = 3.3,3.6,4.0,4.5,5.0 ;; Refresh = 4K/32ms ;; Package = 144FBGA ;; Interface = SSTL_2 ;; Production Status = Eol(last Time Buy:Aug.'03) ;; Comments = -.

K4S511633C : Mobile SDRAM. = K4S511633C 8M X 16Bit X 4 Banks Mobile Sdram ;; Organization = 32Mx16(1CS) ;; Vdd/Vddq(V) = 3.0/3.0,3.3/3.3 ;; Temperature = L,n,p ;; Current(Icc1/Icc6) = 145mA/1800uA ;; Speed = 80,1H,1L ;; Mobile Function = no ;; Package = 54CSP ;; Production Status = Mass Production ;; Comments = -.

M48T129V-70CS1 : 3.3v-5v 1 Mbit 128kb x8 Timekeeper SRAM. INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY AND CRYSTAL YEAR 2000 COMPLIANT BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and SECONDS BATTERY LOW WARNING FLAG AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION TWO WRITE PROTECT VOLTAGES: (VPFD = Power-fail Deselect Voltage) M48T129Y: 4.2V VPFD.

M5M465805BTP-6 : Asynchronous->3.3V EDO. Edo Mode 67108864-bit Dynamic RAM. EDO MODE BY 4-BIT) DYNAMIC RAM EDO MODE BY 8-BIT) DYNAMIC RAM EDO MODE BY 16-BIT) DYNAMIC RAM The M5M467405/465405BJ,BTP is organized M5M467805/465805BJ,BTP is organized by 8-bit, and M5M465165BJ,BTP is organized by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and are suitable for large-capacity memory systems with high speed.

TC58C128A : DiskOnChip. Density (MBytes) = 16 MB. TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE MOS 128-MBIT, 256-MBIT CMOS NAND E2PROM with Flash Controller Flash Disk with Protection and Security-Enabling TC58C128A and is a member of DiskOnChipTM flash disk products, which contains monolithic 128-Mbit and 256-Mbit NAND E2PROM and flash controller. It is fully compatible with DiskOnChipTM Millennium.

W29EE01190B : 128k X 8 CMOS Flash Memory.

WED3DG6432V : Density = 256MB ;; Organization = 2x16Mx64 ;; Components = 16Mx16 (8) ;; Speed MHZ = 100-133 ;; Volt = 3.3 ;;.

K7N323645M : 1Mx36-Bit Pipelined NtRAM™ The K7N323645M and K7N321845M are 37,748,736-bits Synchronous Static SRAMs. The NtRAM™, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order.

HYB25D256400CT-7 : 256Mb Double-Data-Rate SDRAM DDR SDRAM The 256-Mbit Double-Data-Rate SDRAM is a highspeed CMOS, dynamic random-access memory containing 268,435,465 bits. It is internally configured as a quad-bank DRAM..

C57402AL/883B : 64 X 5 OTHER FIFO, 65 ns, CQCC20. s: Memory Category: FIFO ; Density: 0 kbits ; Number of Words: 64 k ; Bits per Word: 5 bits ; Package Type: CERAMIC, LCC-20 ; Pins: 20 ; Logic Family: TTL ; Supply Voltage: 5V ; Access Time: 65 ns ; Cycle Time: 100 ns ; Operating Temperature: -55 to 125 C (-67 to 257 F).

FT28HC256E-12UMB-AT : 32K X 8 EEPROM 5V, 120 ns, CPGA28. s: Density: 262 kbits ; Number of Words: 32 k ; Bits per Word: 8 bits ; Bus Type: Parallel ; Production Status: Full Production ; Access Time: 120 ns ; Logic Family: CMOS ; Supply Voltage: 5V ; Package Type: CERAMIC, PGA-28 ; Pins: 28 ; Operating Range: Military ; Operating Temperature: -55 to 125 C (-67 to 257 F).

GS8180QV18BD-167 : 1M X 18 STANDARD SRAM, 2.5 ns, PBGA165. s: Memory Category: SRAM Chip ; Density: 18874 kbits ; Number of Words: 1000 k ; Bits per Word: 18 bits ; Package Type: 13 X 15 MM, 1 MM PITCH, FPBGA-165 ; Pins: 165 ; Logic Family: CMOS ; Supply Voltage: 2.5V ; Access Time: 2.5 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

MSM51V4265E-60JS : 256K X 16 EDO DRAM, 60 ns, PDSO40. s: Memory Category: DRAM Chip ; Density: 4194 kbits ; Number of Words: 256 k ; Bits per Word: 16 bits ; Package Type: SOJ, 0.400 INCH, PLASTIC, SOJ-40 ; Pins: 40 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 60 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).

MX29GA640EHXFI-90G : 8M X 8 FLASH 3V PROM, 90 ns, PBGA64. s: Memory Category: Flash, PROM ; Density: 67109 kbits ; Number of Words: 8000 k ; Bits per Word: 8 bits ; Package Type: 13 X 11 MM, 1.40 MM HEIGHT, 1 MM PITCH, ROHS COMPLIANT, MO-192, LFBGA-64 ; Pins: 64 ; Supply Voltage: 3V ; Access Time: 90 ns ; Operating Temperature: -40 to 85 C (-40 to 185 F).

 
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