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Part: TIM4450-4UL
Category:
RF & Microwaves
-> Transistors
-> FETs
-> IMFETs
-> C-Band Power GaAs IMFETs
Description: Frequency Band (GHz) = 4.4-5.0 ;; P1dB (dBm) = 36.5 ;; G1dB (dB) = 11.0 ;; P.A.E. (%) Typ. = 37 ;; VDS (V) = 10 ;; Ids (A) Typ. = 1.1 ;; IM3 (dBc) Typ. = -47 ;; RTH ( C/W) Typ. = 4.5 ;; Additional Information = More Info
Company: Toshiba America Electronic Components, Inc.
Datasheet: Download TIM4450-4UL datasheet File size : 263 kB
Request For quote: Find where to buy TIM4450-4UL
Datasheet text preview:
MICROWAVE MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR MICROWAVE TECHNICAL DATA
FEATURES
TIM4450-4UL TIM4450-4UL
HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz
BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) °
CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 Tch IDS1 G G1dB VDS= 10V dB A dB % Two Tone Test Po= 25.5dBm
(Single Carrier Level)
SYMBOL P1dB
CONDITION
UNIT MIN. TYP. MAX. dBm 35.5 10.0 - 44 36.5 11.0 1.1 37 -47 1.1 1.3 ±0.6 1.3 80
f = 4.4 5.0GHz
add
IM3
dBc A °C
VDS X IDS X Rth(c-c)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) °
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL CONDITION VDS= 3V IDS= 1.5A VDS= 3V IDS= 15mA VDS= 3V VGS= 0V IGS= -50µA
gm
VGSoff IDSS VGSO
UNIT MIN. TYP. MAX. mS 900 V A V °C/W -1.0 -5 -2.5 2.6 4.5 -4.0 3.5 6.0
Rth(c-c) Channel to Case
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.
Apr. 2000
TIM4450-4UL
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 °C ) Channel Temperature Storage
( Ta= 25°C ) °
SYMBOL V DS VGS IDS PT T ch Tstg UNIT V V A W °C °C RATING 15 -5 3.5 23 175 -65 +175
PACKAGE OUTLINE (2-11D1B)
0.6±0.15 4-C1.2 Unit in mm 4.0 MIN. Gate Source Drain
2
12.9±0.2 17±0.3 1±0.2 11.0 MAX.
+0.1 0.1 -0.05
3.2±0.3
HANDLING PRECAUTIONS FOR PACKAGED TYPE
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
2
1.6±0.3
2.6±0.3
12
0.2 MAX.
5.0 MAX.
4.0 MIN.
TIM4450-4UL
RF PERFORMANCES Output Power vs. Frequency
39 38 Po (dBm) 37 36 35 34 4 .2 4 .3 4 .4 4 .5 4 .6 4 .7 4 .8 4 .9 5 5 .1 5 .2
VDS= 10V IDS 1.1A Pin= 25.5dBm
Frequency (GHz)
Output Power vs. Input Power
40 39 38 37 Po (dBm) 36 35 34 33 32 31 20
f= 4.7GHz VDS= 10V IDS 1.1A
90 80 Po 70 60
a dd
50 40 30 20 10 0 add (%)
22
24 26 P i n (dBm)
28
30
3
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