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Part: TIM5964-16SL
Category:
RF & Microwaves
-> Transistors
-> FETs
-> IMFETs
-> C-Band Power GaAs IMFETs
Description: Frequency Band (GHz) = 5.9-6.4 ;; P1dB (dBm) = 42.5 ;; G1dB (dB) = 8.0 ;; P.A.E. (%) Typ. = 34 ;; VDS (V) = 10 ;; Ids (A) Typ. = 4.4 ;; IM3 (dBc) Typ. = -45 ;; RTH ( C/W) Typ. = 1.5 ;; Additional Information =
Company: Toshiba America Electronic Components, Inc.
Datasheet: Download TIM5964-16SL datasheet File size : 197 kB
Request For quote: Find where to buy TIM5964-16SL
Datasheet text preview:
TOSHIBA
MICROWAVE POWER GaAs FET TIM5964-16SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs (C-Band)
Features · Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, Single Carrier Level · High power - P1dB = 42.5 dBm at 5.9 GHz to 6.4 GHz · High gain - G1dB = 8.0 dB at 5.9 GHz to 6.4 GHz · Broadband internally matched · Hermetically sealed package RF Performance Specifications (Ta = 25°C)
Characteristic Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Channel-Temperature Rise Symbol P1dB G1dB IDS G add IM3 Tch Note 1 VDS x IDS x Rth (c-c) VDS = 10V f = 5.9 ~ 6.4 GHz Condition Unit dBm dB A dB % dBc °C Min. 41.5 7.0 -42 Typ. 42.5 8.0 4.4 34 -45 Max. 5.0
±0.8
80
Electrical Characteristics (Ta = 25°C)
Characteristic Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance Symbol gm VGSoff IDSS VGSO Rth (c-c) Condition VDS = 3V IDS = 6.0A VDS = 3V IDS = 60 mA VDS = 3V VGS = 0V IGS = -200 µA Channel to Case Unit mS V A V °C/W Min. -1 -5 Typ. 3600 -2.5 10.5 1.5 Max. -4.0 14.0 2.0
Note 1: 2-tone Test Pout = 31.5 dBm Single Carrier Level.
The information contained here is subject to change without notice. The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.
TOSHIBA CORPORATION
MW50800196
1/5
TIM5964-16SL
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc = 25°C) Channel Temperature Storage Temperature Symbol VDS VGS ID PT Tch Tstg Unit V V A W °C °C Rating 15 -5 14 75 175 -65 ~ 175
Package Outline (2-16G1B)
Handling Precautions for Packaged Type Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C.
2/5
MW50800196
TOSHIBA CORPORATION
TIM5964-16SL
RF Performances
TOSHIBA CORPORATION
MW50800196
3/5
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